Abstract:Enhancement-mode (E-mode) GaN MOS-HEMTs using recess process typically face the challenge of precise thickness control, surface roughness issue, and interface traps, all of which could lead to the degradation of the device performance and cause reliability issues. In this article, we use a combined process of atomic layer etching (ALE) technique and atomic layer deposited (ALD) HfSiO dielectric. ALE is repeated oxidation and dry etching process with minimal surface damage, leading to a precisely controlled low-damage recess channel area. The fabricated AlGaN/GaN MOS-HEMTs exhibit E-mode operation with a positive threshold voltage (V-th) of +2.1 V with small V-th dispersion for different devices, an ultrahigh drain current ON-OFF ratio over 1010 and a low ON-resistance (R-ON) of 11.5 Omega . mm at gate-to-drain length (L-GD) of 25 mu m. Source field plate (SFP) structure is employed to reduce the charge trapping process and improve the reliability at high voltages. The current collapse of the E-mode device with SFP structure can be effectively suppressed due to the optimized redistribution of the peak electric field in the gate-to-drain access region, where a significantly improved dynamic R-ON of only 1.17 times increase from the static R-ON after OFF-state V-DS stress of 600 V. Moreover, the enhanced vertical electric field with decreased AlGaN barrier thickness and the positive shift in threshold voltage for the E-mode device can effectively suppress the current collapse, which outperforms the depletion-mode counterpart. The breakdown voltage reaches a considerable value of 1560 V at an OFF-state current density of 1 mu A/mm.

Current Collapse Suppression by Gate Field-Plate in AlGaN/GaN HEMTs

Field-Plate Structure Dependence of Current Collapse Phenomena in High-Voltage GaN-HEMTs

Study of Current Collapse Behaviors of Dual-Gate AlGaN/GaN HEMTs on Si

Influence of Field Plate on Surface-State-related Lag Characteristics of AlGaN/GaN HEMT

Simulation of High Breakdown Voltage, Improved Current Collapse Suppression, and Enhanced Frequency Response AlGaN/GaN HEMT Using A Double Floating Field Plate

Impact of dual field plates on drain current degradation in InAlN/AlN/GaN HEMTs

Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs

Reducing dynamic on-resistance of p-GaN gate HEMTs using dual field plate configurations

An insight to current collapse in GaN HEMT and suppressing techniques

Current collapse suppression in AlGaN/GaN HEMTs using dual-layer SiNx stressor passivation

Suppression of Dynamic On-Resistance Increase and Gate Charge Measurements in High-Voltage GaN-HEMTs With Optimized Field-Plate Structure

Current collapse suppression in AlGaInN/GaN HEMTs with thin unintentionally doped GaN channel and AlN back barrier grown on single-crystal AlN substrate

Breakdown Enhancement and Current Collapse Suppression by High-Resistivity GaN Cap Layer in Normally-Off AlGaN/GaN HEMTs

Study of Normally-Off AlGaN/GaN HEMT with Microfield Plate for Improvement of Breakdown Voltage

Improved Current Collapse in Recessed AlGaN/GaN MOS-HEMTs by Interface and Structure Engineering

Dynamic Characterizations of AlGaN-GaN HEMTs with Field-plates Using a Double-gate Structure

Comparison of recessed gate-head structures on normally-off AlGaN/GaN high-electron-mobility transistor performance

Optimization AlGaN/GaN HEMT with Field Plate Structures

Current-collapse Suppression and Leakage-Current Decrease in AlGaN/GaN HEMT by Sputter-Tan Gate-Dielectric Layer

Breakdown Voltage Enhancement for Power AlGaN/GaN HEMTs with Air-bridge Field Plate

Breakdown-Voltage-Enhancement Technique for RF-Based AlGaN/GaN HEMTs with a Source-Connected Air-Bridge Field Plate