Abstract:In this paper, we present a systematic investigation of metal–organic chemical vapor deposition-grown in situ SiN as the gate dielectric and surface passivation for AlGaN/GaN metal insulator semiconductor high electron mobility transistors (MISHEMTs). The dielectric constant and breakdown field of the in situ SiN were extracted from devices with varied gate dielectric thicknesses. Using frequency-dependent capacitance–voltage and parallel conductance methods, we obtained a low trap density of $\sim 3\times 10^{12}$ cm $^{-2}$ eV $^{-1}$ at the SiN/AlGaN interface. The MISHEMTs with a source–drain distance of $3~\mu \text{m}$ show a maximum drain current of 1560 mA/mm and a high on/off current ratio of $10^{9}$ . The device threshold voltage ( ${V}_\textsf {th}$ ) stability was assessed by means of both negative and positive gate stress measurements, as well as temperature-dependent $ {I}_\textsf {D}$ – ${V}_\textsf{G}$ measurements. We observed a minimal $ {V}_\textsf{th}$ shift of ~0.4 V under both 3000 s gate stress of ${V}_\textsf {GS}= 4$ V and up to 200 °C thermal stimulation. Furthermore, combining the in situ SiN with plasma-enhanced chemical vapor deposition SiN, we developed a bilayer passivation scheme for effective suppression of current collapse. Employing the high-quality in situ SiN, we have demonstrated large-area GaN MISHEMTs on Si with a gate width of 20 mm, showing a low off-state leakage of $2~\mu \text{A}$ /mm at 600 V and a low dynamic/static ON-resistance ratio. The device results show great advantages of employing in situ SiN in D-mode GaN MISHEMTs for high-efficiency power switching applications.

Current collapse suppression in AlGaN/GaN HEMTs using dual-layer SiNx stressor passivation

Study of Current Collapse Behaviors of Dual-Gate AlGaN/GaN HEMTs on Si

Current collapse suppression in AlGaInN/GaN HEMTs with thin unintentionally doped GaN channel and AlN back barrier grown on single-crystal AlN substrate

Improved Current Collapse in Recessed AlGaN/GaN MOS-HEMTs by Interface and Structure Engineering

Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs

Current-collapse Suppression and Leakage-Current Decrease in AlGaN/GaN HEMT by Sputter-Tan Gate-Dielectric Layer

Reduction of Current Collapse in GaN High-Electron Mobility Transistors Using a Repeated Ozone Oxidation and Wet Surface Treatment

Identification of Semi-ON-State Current Collapse in AlGaN/GaN HEMTs by Drain Current Deep Level Transient Spectroscopy

Threshold Voltage Improvement and Leakage Reduction of AlGaN/GaN HEMTs Using Dual-Layer SiNx Stressors

An insight to current collapse in GaN HEMT and suppressing techniques

Current Collapse Reduction in AlGaN/GaN HEMTs by High-Pressure Water Vapor Annealing

Investigation of In Situ SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTs

Multilayer SiNx passivated Al2O3 gate dielectric featuring a robust interface for ultralong-lifetime AlGaN/GaN HEMT

Study of the Leakage Current Suppression for Hybrid-Schottky/ohmic Drain AlGaN/GaN HEMT

Recoverable Current Collapse Effect of p-GaN HEMTs Under Short Circuit Stress

Investigation of Surface- and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors Using a Soft Switched Pulsed \(I-V\) Measurement

AlN/GaN HEMT with Gate Insulation and Current Collapse Suppression Using Thermal ALD ZrO2

Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

AlN/GaN HEMT with Gate Insulation and Current Collapse Suppression Using Thermal ALD ZrO 2

Improvement of DC Performance and RF Characteristics in GaN-Based HEMTs Using SiNx Stress-Engineering Technique

Normally-off GaN HEMTs with InGaN P-Gate Cap Layer Formed by Polarization Doping