Abstract:A novel gate and passivation dielectric stack consisting of a thin metal-organic chemical vapor deposition (MOCVD) grown <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">in-situ</italic> Si 3 N 4 (3 nm) and a thick low-pressure chemical vapor deposition (LPCVD) grown Si 3 N 4 (30 nm) in AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistor (MIS-HEMT) is proposed. The quality of the Si 3 N 4 /(Al)GaN interface and the effect on threshold voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {TH}}$ </tex-math></inline-formula> ) instability and dynamic <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${R}_{ \mathrm{\scriptscriptstyle ON}}$ </tex-math></inline-formula> in the MIS-HEMTs with/without the <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">in-situ</italic> Si 3 N 4 layer are investigated by high-frequency capacitance-voltage (HFCV), quasi-static (QS) <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${C}$ </tex-math></inline-formula> – <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}$ </tex-math></inline-formula> (QSCV), time-of-fly (TOF) stress/measure, and QS <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{\text {D}}$ </tex-math></inline-formula> – <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {DS}}$ </tex-math></inline-formula> methods. It is founded that the <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">in-situ</italic> Si 3 N 4 interfacial layer is effective in improving the dielectric/III-N interface morphology. As a result, better <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {TH}}$ </tex-math></inline-formula> stability and lower <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${R} _{ \mathrm{\scriptscriptstyle ON},\text {D}}/{R} _{ \mathrm{\scriptscriptstyle ON},\text {S}}$ </tex-math></inline-formula> ratio are observed in devices with the <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">in-situ</italic> Si 3 N 4 interfacial layer due to the reduced density of traps close to the dielectric/III-N interface. Time-dependent dielectric breakdown and Weibull performance further verified that the proposed bilayer gate dielectric stack is a promising structure for the high-reliability power transistors.

Investigation of In Situ SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTs

Gate-first Process Compatible, High-Quality in Situ SiNx for Surface Passivation and Gate Dielectrics in AlGaN/GaN MISHEMTs

AlGaN/GaN MIS-HEMT with PECVD SiNx, SiON, SiO2 as Gate Dielectric and Passivation Layer

Low Leakage Current and High Breakdown Field AlGaN/GaN MIS-HEMTs Using PECVD-SiNx As a Gate Dielectric

AlGaN/GaN MISHEMTs with AlN Gate Dielectric Grown by Thermal ALD Technique

Investigation of the Trap States and $v_{\text{th}}$ Instability in LPCVD Si3N4/AlGaN/GaN MIS-HEMTs with an In-Situ Si3N4 Interfacial Layer

Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al2O3/AlN Composite Gate Insulator

Improved LPCVD-SiNx/AlGaN/GaN MIS-HEMTs by Using In-Situ MOCVD-SiNx As an Interface Sacrificial Layer

Optimized Transport Properties of GaN MISHEMTs with Thin AlN Interlayer

Improved Performance of Fully-Recessed High-Threshold-Voltage GaN MIS-HEMT with in Situ H₂/N₂ Plasma Pretreatment

Investigation of the Trap States and <inline-formula> <tex-math notation="LaTeX">$V_{\text{TH}}$ </tex-math></inline-formula> Instability in LPCVD Si<sub>3</sub>N<sub>4</sub>/AlGaN/GaN MIS-HEMTs with an <italic>In-Situ</italic> Si<sub>3</sub>N<sub>4</sub> Interfacial Layer

High-performance GaN metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) using Sc0.2Al0.8N/SiNX as composite gate dielectric

Fabrication of High-Uniformity and High-Reliability Si 3 N 4 /algan/gan MIS-HEMTs with Self-Terminating Dielectric Etching Process in a 150-Mm Si Foundry

Threshold Voltage Instability in III-nitride Heterostructure Metal–insulator–semiconductor High-Electron-mobility Transistors: Characterization and Interface Engineering

Interface charge engineering on an in situ SiN x /AlGaN/GaN platform for normally off GaN MIS-HEMTs with improved breakdown performance

Normally-OFF AlGaN/GaN MIS-HEMTs With Low R ON and V th Hysteresis by Functioning In-situ SiN x in Regrowth Process

Improved Performance of Fully-Recessed High-Threshold-Voltage GaN MIS-HEMT With in Situ H2/N2 Plasma Pretreatment

Investigation of the Trap States and V Th Instability in Normally-Off GaN MIS-FETs with LPCVD SiNx/PEALD AlN Gate Dielectric Stack and in Situ H2/N2 Plasma Pretreatment

AlN/GaN Metal–insulator–semiconductor High-Electron-mobility Transistor with Thermal Atomic Layer Deposition AlN Gate Dielectric

Improvement of Dynamic On-Resistance in GaN-Based Devices with a High-Quality In Situ SiN Passivation Layer

Normally-off Fully Recess-Gated GaN Metal–insulator–semiconductor Field-Effect Transistor Using Al2O3/Si3N4 Bilayer As Gate Dielectrics