Abstract:In this paper, we present a systematic investigation of metal–organic chemical vapor deposition-grown in situ SiN as the gate dielectric and surface passivation for AlGaN/GaN metal insulator semiconductor high electron mobility transistors (MISHEMTs). The dielectric constant and breakdown field of the in situ SiN were extracted from devices with varied gate dielectric thicknesses. Using frequency-dependent capacitance–voltage and parallel conductance methods, we obtained a low trap density of $\sim 3\times 10^{12}$ cm $^{-2}$ eV $^{-1}$ at the SiN/AlGaN interface. The MISHEMTs with a source–drain distance of $3~\mu \text{m}$ show a maximum drain current of 1560 mA/mm and a high on/off current ratio of $10^{9}$ . The device threshold voltage ( ${V}_\textsf {th}$ ) stability was assessed by means of both negative and positive gate stress measurements, as well as temperature-dependent $ {I}_\textsf {D}$ – ${V}_\textsf{G}$ measurements. We observed a minimal $ {V}_\textsf{th}$ shift of ~0.4 V under both 3000 s gate stress of ${V}_\textsf {GS}= 4$ V and up to 200 °C thermal stimulation. Furthermore, combining the in situ SiN with plasma-enhanced chemical vapor deposition SiN, we developed a bilayer passivation scheme for effective suppression of current collapse. Employing the high-quality in situ SiN, we have demonstrated large-area GaN MISHEMTs on Si with a gate width of 20 mm, showing a low off-state leakage of $2~\mu \text{A}$ /mm at 600 V and a low dynamic/static ON-resistance ratio. The device results show great advantages of employing in situ SiN in D-mode GaN MISHEMTs for high-efficiency power switching applications.

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AlN/GaN HEMT with Gate Insulation and Current Collapse Suppression Using Thermal ALD ZrO2

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Current-collapse Suppression and Leakage-Current Decrease in AlGaN/GaN HEMT by Sputter-Tan Gate-Dielectric Layer

Low Leakage Current and High Breakdown Field AlGaN/GaN MIS-HEMTs Using PECVD-SiNx As a Gate Dielectric

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Atomic Layer Deposition of ZrO2 As Gate Dielectrics for AlGaN/GaN Metal-Insulator-semiconductor High Electron Mobility Transistors on Silicon

Enhanced Device Performance of AlGaN/GaN HEMTs Using Thermal Oxidation of Electron-Beam Deposited Aluminum for Gate Oxide

Fabrication of High-Uniformity and High-Reliability Si 3 N 4 /algan/gan MIS-HEMTs with Self-Terminating Dielectric Etching Process in a 150-Mm Si Foundry

Improved two-dimensional electron gas transport characteristics in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor with atomic layer-deposited Al2O3 as gate insulator

Normally-OFF AlGaN/GaN MIS-HEMTs With Low R ON and V th Hysteresis by Functioning In-situ SiN x in Regrowth Process