Abstract:A novel gate and passivation dielectric stack consisting of a thin metal-organic chemical vapor deposition (MOCVD) grown <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">in-situ</italic> Si 3 N 4 (3 nm) and a thick low-pressure chemical vapor deposition (LPCVD) grown Si 3 N 4 (30 nm) in AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistor (MIS-HEMT) is proposed. The quality of the Si 3 N 4 /(Al)GaN interface and the effect on threshold voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {TH}}$ </tex-math></inline-formula> ) instability and dynamic <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${R}_{ \mathrm{\scriptscriptstyle ON}}$ </tex-math></inline-formula> in the MIS-HEMTs with/without the <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">in-situ</italic> Si 3 N 4 layer are investigated by high-frequency capacitance-voltage (HFCV), quasi-static (QS) <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${C}$ </tex-math></inline-formula> – <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}$ </tex-math></inline-formula> (QSCV), time-of-fly (TOF) stress/measure, and QS <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{\text {D}}$ </tex-math></inline-formula> – <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {DS}}$ </tex-math></inline-formula> methods. It is founded that the <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">in-situ</italic> Si 3 N 4 interfacial layer is effective in improving the dielectric/III-N interface morphology. As a result, better <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {TH}}$ </tex-math></inline-formula> stability and lower <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${R} _{ \mathrm{\scriptscriptstyle ON},\text {D}}/{R} _{ \mathrm{\scriptscriptstyle ON},\text {S}}$ </tex-math></inline-formula> ratio are observed in devices with the <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">in-situ</italic> Si 3 N 4 interfacial layer due to the reduced density of traps close to the dielectric/III-N interface. Time-dependent dielectric breakdown and Weibull performance further verified that the proposed bilayer gate dielectric stack is a promising structure for the high-reliability power transistors.

Investigation of the Trap States and $v_{\text{th}}$ Instability in LPCVD Si3N4/AlGaN/GaN MIS-HEMTs with an In-Situ Si3N4 Interfacial Layer

Investigation of the Trap States and <inline-formula> <tex-math notation="LaTeX">$V_{\text{TH}}$ </tex-math></inline-formula> Instability in LPCVD Si<sub>3</sub>N<sub>4</sub>/AlGaN/GaN MIS-HEMTs with an <italic>In-Situ</italic> Si<sub>3</sub>N<sub>4</sub> Interfacial Layer

Improved LPCVD-SiNx/AlGaN/GaN MIS-HEMTs by Using In-Situ MOCVD-SiNx As an Interface Sacrificial Layer

Threshold Voltage Instability in III-nitride Heterostructure Metal–insulator–semiconductor High-Electron-mobility Transistors: Characterization and Interface Engineering

Investigation of the Trap States and V Th Instability in Normally-Off GaN MIS-FETs with LPCVD SiNx/PEALD AlN Gate Dielectric Stack and in Situ H2/N2 Plasma Pretreatment

Identification of bulk and interface state-induced threshold voltage instability in metal/SiNx(insulator)/AlGaN/GaN high-electron-mobility transistors using deep-level transient spectroscopy

Investigation of In Situ SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTs

Investigation of the Interface Between LPCVD-SiNx Gate Dielectric and III-nitride for AlGaN/GaN MIS-HEMTs

High-performance AlGaN/GaN MIS-HEMT Device Based on in Situ Plasma Nitriding and Low Power Chemical Vapor Deposition Si3N4 Gate Dielectrics

AlGaN/GaN MIS-HEMTs of Very-Low ${v}_{\sf {{th}}}$ Hysteresis and Current Collapse with In-Situ Pre-Deposition Plasma Nitridation and LPCVD-Si3N4 Gate Insulator

Dynamic Characteristics of GaN MISHEMT with 5-Nm In-Situ SiNx Dielectric Layer

Study of Interface Traps in AlGaN/GaN MISHEMTs Using LPCVD SiNx As Gate Dielectric

Gaas-Based Metal-Insulator-Semiconductor Structures with Low Interface Traps Using Molecular-Beam Epitaxy and Chemical-Vapor-Deposition

Effect of Interface and Bulk Traps on Thec–vcharacterization of a LPCVD-SiNx/AlGaN/GaN Metal-Insulator-semiconductor Structure

Characterization of Different Trap States in AlGaN/GaN MIS-HEMTs under High Reverse Gate Stress

Effective Suppression of Deep Interface States and Dielectric Trapping in SiNx/GaN Metal-Insulator-semiconductor Structures by a SiOxNy Interfacial Layer Grown by Plasma-Enhanced Atomic Layer Deposition

AlGaN/GaN MIS-HEMT with PECVD SiNx, SiON, SiO2 as Gate Dielectric and Passivation Layer

Interface Si Donor Control to Improve Dynamic Performance of AlGaN/GaN MIS-HEMTs

Low Threshold Voltage Shift in AlGaN/GaN MIS-HEMTs on Si Substrate Using SiNx/SiON As Composite Gate Dielectric

Enhanced Gate Stack Stability in GaN Transistors with Gate Dielectric of Bilayer SiNx by Low Pressure Chemical Vapor Deposition

Compatibility of AlN/SiN<sub>x</sub>Passivation With LPCVD-SiN<sub>x</sub>Gate Dielectric in GaN-Based MIS-HEMT