Abstract:Fully recessed normally off LPCVD-Si3N4/PEALD-AlN/GaN MIS-HEMTs are fabricated with self-terminating wet etch technique. The effects of in-situ N2 or H2/N2 plasma treatments prior to the deposition of PEALD-AlN on the trap states of the device are studied. The interface trap density(Dit) is extracted using the multi-frequency capacitance-voltage (MFCV) method, whereas the border trap density (Nt) is extracted using the low frequency noise (1/f noise) method. The total Dit of devices with in-situ N2 and H2/N2 plasma pretreatment are 9.86 × 10 12 and 8.51 × 10 12 eV -1 cm -2 , respectively, an order of magnitude lower than no plasma pretreatment (1.52 × 10 13 eV -1 cm -2 ). The Nt of devices with no plasma pretreatment, in-situ N2 and H2/N2 plasma pretreatment are 6.20 × 10 19 ∼ 7.26 × 10 19 , 5.04 × 10 18 ∼ 7.97 × 10 18 and 3.05 × 10 18 ∼ 4.06 × 10 18 eV -1 cm -3 , respectively. These results indicate that the in-situ H2/N2 plasma pretreatment is more effective at reducing the trap density compared to in-situ N2 plasma pretreatment. Besides, it is found that the plasma pretreatment process may suppress border trap better than interface trap.

Investigation of the Trap States and V Th Instability in Normally-Off GaN MIS-FETs with LPCVD SiNx/PEALD AlN Gate Dielectric Stack and in Situ H2/N2 Plasma Pretreatment

Characterization and Reliability Analysis of Enhancement-Mode PEALD AlN/LPCVD SiN<sub>x</sub> GaN MISFET with In Situ H<sub>2</sub>/N<sub>2</sub> Plasma Pretreatment

Investigation of the Trap States and $v_{\text{th}}$ Instability in LPCVD Si3N4/AlGaN/GaN MIS-HEMTs with an In-Situ Si3N4 Interfacial Layer

Improved Performance of Fully-Recessed High-Threshold-Voltage GaN MIS-HEMT with in Situ H₂/N₂ Plasma Pretreatment

Improved Performance of Fully-Recessed High-Threshold-Voltage GaN MIS-HEMT With in Situ H2/N2 Plasma Pretreatment

Characterization of Gate Leakage and Reliability of Normally-OFF GaN MOSFET with LPCVD-SiNx/PEALD-AlN Dual Gate Dielectric and In-Situ H2(15%)/N2(85%) Plasma Pretreatment

Improved Vth Stability and Gate Reliability of GaN-Based MIS-HEMTs by Employing Alternating O2 Plasma Treatment

Pulsed N2 Plasma Surface Treatment for AlGaN/GaN HEMTs Prior to PECVD SiNx Passivation to Reduce Plasma Damage

Improved Performance of Fully-Recessed Normally-off LPCVD SiN/GaN MISFET Using N2O Plasma Pretreatment

Investigation of the Trap States in Fully-Recessed Normally off LPCVD-Si<inf>3</inf>N<inf>4</inf>/PEALD-AlN/GaN MIS-HEMT with in-Situ N<inf>2</inf> or H<inf>2</inf>/N<inf>2</inf> Plasma Pretreatment

Improved Performance of Enhancement-Mode GaN MIS-FET Based on a Self-Terminating Gate Recess Etching Technique with in Situ NH3 Pre-Treatment

Investigation of In Situ SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTs

Improving Gate Reliability of 6-in E-Mode GaN-Based MIS-HEMTs by Employing Mixed Oxygen and Fluorine Plasma Treatment

AlGaN/GaN MISHEMTs with AlN Gate Dielectric Grown by Thermal ALD Technique

Threshold Voltage Instability in III-nitride Heterostructure Metal–insulator–semiconductor High-Electron-mobility Transistors: Characterization and Interface Engineering

O2 Plasma Alternately Treated ALD-Al2O3 As Gate Dielectric for High Performance AlGaN/GaN MIS-HEMTs

Reduction in Interface Trap Density of Al2O3/SiGe Gate Stack by Electron Cyclotron Resonance Plasma Post-nitridation

Effective Suppression of Deep Interface States and Dielectric Trapping in SiNx/GaN Metal-Insulator-semiconductor Structures by a SiOxNy Interfacial Layer Grown by Plasma-Enhanced Atomic Layer Deposition

Effects of ammonia and oxygen plasma treatment on interface traps in AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

High V th and Improved Gate Reliability in P-GaN Gate HEMTs with Oxidation Interlayer

High Threshold Voltage Stability Enhancement-Mode GaN p-FETs Fabricated With PEALD-AlN Gate Interfacial Layer