Abstract:A novel effective reliability improvement technology for gallium nitride (GaN) devices and passivation dielectric stack consisting of a plasma-enhanced atomic layer deposition (PEALD) grown aluminum nitride (AlN, 5 nm) and a low-pressure chemical vapor deposition (LPCVD) grown silicon nitride (SiNx, 30 nm) in normally- OFF GaN metal–insulator–semiconductor field-effect transistors (MIS-FETs) is proposed. This reliability improvement technique features an in situ H2 (15%)/N2 (85%) plasma pretreatment in a PEALD system before the deposition of PEALD AlN. The quality of the AlN/(Al)GaN interface, threshold voltage instability, and dynamic ${R}_{\text {on}}$ in the normally- OFF GaN MIS-FETs with and without the in situ H2 (15%)/N2 (85%) plasma pretreatment was investigated using various methods. The equivalent parallel conductance method, high-frequency capacitance-voltage, time-of-fly (TOF) stress/measures, and quasi-static ${I}_{\text {D}}$ – ${V}_{\text {D}}$ methods were used in the experimental studies. The results showed that the in situ H2 (15%)/N2 (85%) plasma pretreatment technique is effective in improving the quality of the AlN/GaN interface. The devices with the in situ H2 (15%)/N2 (85%) plasma pretreatment had improved ${V}_{\text {th}}$ stability and lower ${R}_{\text {on}, {dynamic}}/{R}_{\text {on}, {static}}$ ratio, which was due to the reduced interface trap densities between the AlN/GaN interface and the improved mobility of 2-D electron gas (2DEG). The time-dependent dielectric breakdown (TDDB) and Weibull performance further verified that the proposed in situ H2 (15%)/N2 (85%) plasma pretreatment techniques were reliable in improving the reliability of GaN power devices.

Improved Performance of Fully-Recessed High-Threshold-Voltage GaN MIS-HEMT With in Situ H2/N2 Plasma Pretreatment

Improved Performance of Fully-Recessed High-Threshold-Voltage GaN MIS-HEMT with in Situ H₂/N₂ Plasma Pretreatment

Improved Performance of Enhancement-Mode GaN MIS-FET Based on a Self-Terminating Gate Recess Etching Technique with in Situ NH3 Pre-Treatment

Investigation of the Trap States and V Th Instability in Normally-Off GaN MIS-FETs with LPCVD SiNx/PEALD AlN Gate Dielectric Stack and in Situ H2/N2 Plasma Pretreatment

Improving Performance and Breakdown Voltage in Normally-Off GaN Recessed Gate MIS-HEMTs Using Atomic Layer Etching and Gate Field Plate for High-Power Device Applications

Improved Performance of Fully-Recessed Normally-off LPCVD SiN/GaN MISFET Using N2O Plasma Pretreatment

Characterization and Reliability Analysis of Enhancement-Mode PEALD AlN/LPCVD SiN<sub>x</sub> GaN MISFET with In Situ H<sub>2</sub>/N<sub>2</sub> Plasma Pretreatment

Investigation of In Situ SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTs

Low Leakage Current and High Breakdown Field AlGaN/GaN MIS-HEMTs Using PECVD-SiNx As a Gate Dielectric

Pulsed N2 Plasma Surface Treatment for AlGaN/GaN HEMTs Prior to PECVD SiNx Passivation to Reduce Plasma Damage

Normally-OFF AlGaN/GaN MIS-HEMTs With Low R ON and V th Hysteresis by Functioning In-situ SiN x in Regrowth Process

In Situ H-Radical Surface Treatment on Aluminum Gallium Nitride for High-Performance Aluminum Gallium Nitride/Gallium Nitride MIS-HEMTs Fabrication

NH3/N2 plasma treatment on etched AlGaN surface for high-performance p-GaN HEMTs fabrication

AlGaN/GaN MISHEMTs with AlN Gate Dielectric Grown by Thermal ALD Technique

O2 Plasma Alternately Treated ALD-Al2O3 As Gate Dielectric for High Performance AlGaN/GaN MIS-HEMTs

High-Performance N-Polar GaN/AlGaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors with Low Surface Roughness Enabled by Chemical–Mechanical-Polishing-Incorporated Layer Transfer Technology

Improved Vth Stability and Gate Reliability of GaN-Based MIS-HEMTs by Employing Alternating O2 Plasma Treatment

Improving Gate Reliability of 6-in E-Mode GaN-Based MIS-HEMTs by Employing Mixed Oxygen and Fluorine Plasma Treatment

Non-Buffer Epi-AlGaN/GaN on SiC for High-Performance Depletion-Mode MIS-HEMTs Fabrication

Current-collapse Suppression and Leakage-Current Decrease in AlGaN/GaN HEMT by Sputter-Tan Gate-Dielectric Layer

Improved Electrical Performance of InAlN/GaN High Electron Mobility Transistors with Post Bis(trifluoromethane) Sulfonamide Treatment