Abstract:In this paper, DC, transient, and RF performances among AlGaN/GaN HEMTs with a no field plate structure (basic), a conventional gate field plate structure (GFP), and a double floating field plate structure (2FFP) were studied by utilizing SILVACO ATLAS 2D device technology computer-aided design (TCAD). The peak electric fields under the gate in drain-side can be alleviated effectively in 2FFP devices, compared with basic and GFP devices, which promotes the breakdown voltage (BV) and suppresses the current collapse phenomenon. As a result, the ON-resistance increase caused by the current collapse phenomena is dramatically suppressed in 2FFP ~19.9% compared with GFP ~49.8% when a 1 ms duration pre-stress was applied with Vds = 300 V in the OFF-state. Because of the discontinuous FP structure, more electric field peaks appear at the edge of the FFP stacks, which leads to a higher BV of ~454.4 V compared to the GFP ~394.3 V and the basic devices ~57.6 V. Moreover, the 2FFP structure performs lower a parasitic capacitance of Cgs = 1.03 pF and Cgd = 0.13 pF than those of the GFP structure (i.e., Cgs = 1.89 pF and Cgd = 0.18 pF). Lower parasitic capacitances lead to a much higher cut-off frequency (ft) of 46 GHz and a maximum oscillation frequency (fmax) of 130 GHz than those of the GFP structure (i.e., ft = 27 GHz and fmax = 93 GHz). These results illustrate the superiority of the 2FFP structure for RF GaN HEMT and open up enormous opportunities for integrated RF GaN devices.

Influence of Field Plate on Surface-State-related Lag Characteristics of AlGaN/GaN HEMT

Current Collapse Suppression by Gate Field-Plate in AlGaN/GaN HEMTs

ATLAS Simulation on Electrical Field Distribution of AlGaN/GaN HEMT

Impact of dual field plates on drain current degradation in InAlN/AlN/GaN HEMTs

Dynamic Characterizations of AlGaN-GaN HEMTs with Field-plates Using a Double-gate Structure

Optimization AlGaN/GaN HEMT with Field Plate Structures

Influence of Pit Defects on AlGaN Surface and Dislocation Defects in GaN Buffer Layer on Current Collapse of AlGaN/GaN HEMTs

Simulation of High Breakdown Voltage, Improved Current Collapse Suppression, and Enhanced Frequency Response AlGaN/GaN HEMT Using A Double Floating Field Plate

Effect of jagged field plate structures on DC and RF performance of AlGaN/GaN HEMTs

Field-Plate Structure Dependence of Current Collapse Phenomena in High-Voltage GaN-HEMTs

A novel field plate with arcuate end for improving GaN HEMTs

Study of Normally-Off AlGaN/GaN HEMT with Microfield Plate for Improvement of Breakdown Voltage

Physics-Based 2-D Analytical Model for Field-Plate Engineering of AlGaN/GaN Power HFET

Reliability of enhancement-mode p-GaN gate GaN HEMT with multiple field plates

Electric Field Distribution Around Drain-Side Gate Edge in AlGaN/GaN HEMTs: Analytical Approach

Static Surface States and Bulk Traps in AlGaN/GaN HEMT Including Hot Electron and Quantum Effects

Optimization of the Field Plate Design of a 1200 V p-GaN Power High-Electron-Mobility Transistor

Study on the Gate-Terminated Field-Plates for GaN-Based HEMT

Reducing dynamic on-resistance of p-GaN gate HEMTs using dual field plate configurations

Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs

High-field-induced Electron Detrapping in an AlGaN/GaN High Electron Mobility Transistor