Abstract:An accurate physical model for GaN high-electron-mobility-transistors (HEMTs) device is imperative and crucial for circuit design and technology optimization. In this paper, a scalable large-signal surface-potential (SP) model of AlGaN/GaN HEMTs is presented. The drain current model is capable of accurately modeling the self-heating effect and trapping effect. The self-heating effect is modeled by embedding temperature increment into free-carrier mobility model, and the trapping effect is modeled by introducing an indirect variable effective gate voltage V-gseff. Moreover, the scaling and multiharmonic characteristics of the SP model are studied for the first time. The geometry-dependent thermal resistance R-ths is identified by the electrothermal finite-element method simulations, which is scalable with the gate width W and power dissipations P-diss of the device. Single-tone on-wafer load-pull measurements at operating frequency 8 GHz is carried out for verification purpose. Accurate predictions of the static (dc) I-V, pulsed-gate-and-drain I - V, S-parameters up to 40 GHz and large-signal harmonic performance (the fundamental, second-and third-harmonics output power, and power-added efficiency) for the devices with different gate peripheries have been achieved by the proposed model. The results of this paper can pave the way for the full application of the physical-based model in circuits design.

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Analytical Model for AlGaN/GaN High Electron Mobility Transistor

Analytical Models for Channel Potential and Drain Current in AlGaN/GaN HEMT Devices

A Surface Potential Large Signal Model for AlGaN/GaN HEMTs

A Scalable Multiharmonic Surface-Potential Model of AlGaN/GaN HEMTs

Surface Acceptor-Like Trap Model for Gate Leakage Current Degradation in Lattice-Matched Inaln/Gan Hemts

A New Empirical I-V Model for AlGaN/GaN HEMT Devices

Improved Analytical Model of Surface Potential with Modified Boundary Conditions for Double Gate Tunnel FETs.

A new analytical high frequency noise parameter model for AlGaN/GaN HEMT

Analysis and modeling of the influence of gate leakage current on threshold voltage and subthreshold swing in p-GaN gate AlGaN/GaN high electron mobility transistors

An Analytical Model of Gate-All-Around Heterojunction Tunneling FET

A Comprehensive Model for Gate Current in E-Mode p-GaN HEMTs

ATLAS Simulation on Electrical Field Distribution of AlGaN/GaN HEMT

Analytical Modeling of $I-V$ characteristics using 2D Poisson Equations in AlN/$β$-Ga$_2$O$_3$ HEMT

Model the AlGaN/GaN high electron mobility transistors

Analytical Modeling of Capacitances for GaN HEMTs, Including Parasitic Components

An enhanced AlGaN/GaN HEMTs large-signal model with parameter extraction methodology

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Reliability of enhancement-mode p-GaN gate GaN HEMT with multiple field plates