Abstract:We develop an analytical model for the Direct-Current (DC) and capacitance-voltage (CV) characteristics of AlGaN/GaN High Electron Mobility Transistors (HEMTs), providing accurate predictions of the transconductance and the gate capacitance in both linear and velocity saturation regions. The models provide an accurate and smooth connection in the area near the knee point for the DC characteristics, which is attributed to precise descriptions of the channel charge. An accurate model for the low-field mobility of the two dimensional electron gases (2DEG) has been developed, considering the nonmonotonic dependence of the carrier velocity on the electric field perpendicular to the channel for the first time. The calculated transconductance and output conductance are proved accurate and to have high order continuity, especially in large voltage biases, which is hard for some other analytical or numeral models. The gate capacitance has been obtained analytically and verified by experimental data. The slight decrease in the measured gate-to-source capacitance over the velocity saturation region which indicates the results of neutralization of donors and the contribution of the free electron in the AlGaN layer has been modeled accurately and smoothly for the first time. The predicted cut-off frequency is in excellent agreements with measured data over the full range of applied biases. The models are implemented into the HSPICE simulator for the DC, AC and transient simulations, with good speed and convergence characteristics.

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Analytical Model for AlGaN/GaN High Electron Mobility Transistor

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Analysis and modeling of the influence of gate leakage current on threshold voltage and subthreshold swing in p-GaN gate AlGaN/GaN high electron mobility transistors

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Analytical Model for High Current Density Trench Gate Mosfet

Gate Leakage Analysis of Nano-MOSFETs Using Ensemble Full Band Monte Carlo with Quantum Correction

Modeling of the Gate Bias-Dependent Velocity–Field Relationship and Physics-Based Current-Voltage Characteristics in AlGaN/GaN HFETs

Gate Leakage Mechanisms in Normally off P-Gan/algan/gan High Electron Mobility Transistors

A Physics-Based Compact Direct-Current and Alternating-Current Model for AlGaN/GaN High Electron Mobility Transistors

Dynamic gate leakage current of p-GaN Gate AlGaN/GaN HEMT under positive bias Conditions

Dynamic Gate Capacitance Model for Switching Transient Analysis in P-GaN Gate HEMTs

A Novel Physics-Based Approach to Analyze and Model E -Mode p-GaN Power HEMTs

Investigation of the forward gate leakage current in pGaN/AlGaN/GaN HEMTs through TCAD simulations.

Electric Field Distribution Around Drain-Side Gate Edge in AlGaN/GaN HEMTs: Analytical Approach

Analysis and Reduction of the Gate Forward Leakage Current in AlGaN/GaN HEMTs Employing Energy-Band Modulation Technology

A new analytical high frequency noise parameter model for AlGaN/GaN HEMT

An Analytical Model of Dynamic Power Losses in eGaN HEMT Power Devices

2-D Analytical Model for Current–Voltage Characteristics and Transconductance of AlGaN/GaN MODFETs