Abstract:The small gate overvoltage margin is a key reliability concern of the GaN Schottky-type p-gate high electron mobility transistor (GaN SP-HEMT). Current evaluation of gate reliability in GaN SP-HEMTs relies on either the DC bias stress or pulse I-V method, neither of which resembles the gate voltage (VGS) overshoot waveform in practical converters. This work develops a new circuit method to characterize the gate robustness and reliability in GaN SP-HEMTs, which features a resonance-like VGS ringing with pulse width down to 20 ns and an inductive switching concurrently in the drain-source loop. Using this method, the gate's single-pulse failure boundary, i.e., dynamic gate breakdown voltage (BVDYN), is first obtained under the hard switching (HSW) and drain-source grounded (DSG) conditions. The gate's switching lifetime is then tested under the repetitive VGS ringing, and the number of switching cycles to failure (SCTF#) is fitted by Weibull or Lognormal distributions. The SCTF# shows a power law relation with the VGS peak value and little dependence on the switching frequency. More interestingly, the gate's BVDYN and lifetime are both higher in HSW than those in DSG, as well as at higher temperatures. Such findings, as well as the gate degradation behaviors in a prolonged overvoltage stress test, can be explained by the time-dependent Schottky breakdown mechanism. The gate leakage current is found to be the major precursor of gate degradation. At 125 oC and 100 kHz, the VGS limits for a 10-year lifetime are projected to be ∼6 V and ∼10 V under the DSG and HSW conditions, respectively. These results provide a new qualification method and reveal new physical insights for gate reliability and robustness in p-gate GaN HEMTs

Modeling Gate Leakage Current for p-GaN Gate HEMTs With Engineered Doping Profile

Analytical Model for AlGaN/GaN High Electron Mobility Transistor

A Comprehensive Model for Gate Current in E-Mode p-GaN HEMTs

Analysis and modeling of the influence of gate leakage current on threshold voltage and subthreshold swing in p-GaN gate AlGaN/GaN high electron mobility transistors

Gate Current Transport in Enhancement-Mode P-N Junction/AlGaN/GaN (PNJ) HEMT

Gate Leakage Mechanisms in Normally off P-Gan/algan/gan High Electron Mobility Transistors

Gate Leakage Analysis of Nano-MOSFETs Using Ensemble Full Band Monte Carlo with Quantum Correction

Analytical Model for High Current Density Trench Gate Mosfet

Dynamic gate leakage current of p-GaN Gate AlGaN/GaN HEMT under positive bias Conditions

Investigation of the forward gate leakage current in pGaN/AlGaN/GaN HEMTs through TCAD simulations.

An ASM-Based Semiempirical Model for AlGaN/GaN Power HEMTs with P-Gan Gate

Modeling of the Gate Bias-Dependent Velocity–Field Relationship and Physics-Based Current-Voltage Characteristics in AlGaN/GaN HFETs

Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs

Gate and barrier layer design of E-mode GaN HEMT with p-GaN gate structure

Degradation Mechanisms of Gate Leakage in GaN-Based HEMTs at Low Dose Rate Irradiation

Main Mechanism Responsible for pGaN Gate Breakdown and Lifetime Projection in GaN HEMTs

Effect of Hole-Injection on Leakage Degradation in a &Lt;inline-Formula> &Lt;tex-Math Notation="latex">$p$ &Lt;/tex-Math> &Lt;/inline-Formula>-gan Gate AlGaN/GaN Power Transistor

Gate Robustness and Reliability of P-Gate GaN HEMT Evaluated by a Circuit Method

Mechanism of Leakage Current Increase in P-Gan Gate AlGaN/GaN Power Devices Induced by ON-state Gate Bias

Bidirectional Threshold Voltage Shift and Gate Leakage in 650 V P-Gan AlGaN/GaN HEMTs: the Role of Electron-Trapping and Hole-Injection

Threshold Voltage Modulation and Gate Leakage Suppression of Enhancement-Mode GaN HEMT by Metal/Insulator/p-GaN Gate Structure