Abstract:The leakage current suppression mechanism in AlGaN/GaN High Electron Mobility Transistors (HEMTs) is investigated. It is known that leakage current can cause severe reliability problems for HEMT devices and conventional AlGaN/GaN HEMT devices suffer from detrimental off-state drain leakage current issues, especially under high off-state drain bias. Therefore, a leakage current suppression technique featuring hybrid-Schottky/ohmic-drain contact is discussed. Through the 2-zones leakage current suppression mechanism by the hybrid-Schottky/drain metal including the shielding effect of the rough ohmic-drain metal morphology and the drain side electric field modulation, AlGaN/GaN HEMT featuring this novel technique can significantly enhance the leakage current suppression capability and improve the breakdown voltage. An analytical method using loop-voltage-scanning is proposed to illustrate the optimization procedure of the hybrid-Schottky/ohmic drain metallization on leakage current suppression. Through the comparison of the loop leakage current hysteresis of conventional ohmic drain HEMT and hybrid-Schottky/ohmic drain, the leakage current suppression mechanism is verified through the leakage current considering surface acceptor-like trap charging/discharging model. Device featuring the hybrid-Schottky/ohmic drain technique shows an improvement in breakdown voltage from 450 V (with no Schottky drain metal) to 855 V with a total drift region length of 9 mu m, indicating enhanced off-state reliability characteristics for the AlGaN/GaN HEMT devices. (C) 2014 Elsevier Ltd. All rights reserved.

Dynamic gate leakage current of p-GaN Gate AlGaN/GaN HEMT under positive bias Conditions

Gate Current Transport in Enhancement-Mode P-N Junction/AlGaN/GaN (PNJ) HEMT

Gate Leakage Mechanisms in Normally off P-Gan/algan/gan High Electron Mobility Transistors

Modeling Gate Leakage Current for p-GaN Gate HEMTs With Engineered Doping Profile

A Comprehensive Model for Gate Current in E-Mode p-GaN HEMTs

Mechanism of Leakage Current Increase in P-Gan Gate AlGaN/GaN Power Devices Induced by ON-state Gate Bias

On the Reverse Gate Leakage Current of AlGaN/GaN High Electron Mobility Transistors

Effect of Source Electrostatic Interaction on the Off-State Leakage Current of p-GaN Gate HEMTs

Bidirectional Threshold Voltage Shift and Gate Leakage in 650 V P-Gan AlGaN/GaN HEMTs: the Role of Electron-Trapping and Hole-Injection

Gate/Drain Coupled Barrier Lowering Effect and Negative Threshold Voltage Shift in Schottky-Type P-Gan Gate HEMT

Improved Drain Current Density of E-Mode AlGaN/GaN HEMT with Double-Doped P-Gate

Time-Resolved Threshold Voltage Instability of 650-V Schottky Type p-GaN Gate HEMT Under Temperature-Dependent Forward and Reverse Gate Bias Conditions

Investigation of the forward gate leakage current in pGaN/AlGaN/GaN HEMTs through TCAD simulations.

Improved Dram Current Density of E-Mode AlGaN/GaN HEMT with Double-Doped P-Gate

Enhancement-mode GaN HEMT using a combination structure of recessed-gate and p-GaN gate structure

Normally-off GaN HEMTs with InGaN P-Gate Cap Layer Formed by Polarization Doping

Gate and barrier layer design of E-mode GaN HEMT with p-GaN gate structure

Current-collapse Suppression and Leakage-Current Decrease in AlGaN/GaN HEMT by Sputter-Tan Gate-Dielectric Layer

Reverse Conduction Induced Dynamic $\mathrm{R}_{\text{on}}$ Effect in GaN HEMT with p-GaN Gate

Gate Leakage Mechanisms of the AlGaN/GaN HEMT with Fluorinated Graphene Passivation

Study of the Leakage Current Suppression for Hybrid-Schottky/ohmic Drain AlGaN/GaN HEMT