Abstract:In this paper, systematic characterization and the corresponding suppression strategies of dynamic OFF-state leakage current ( ${I}_{ \mathrm{\scriptscriptstyle OFF}}$ ) in Schottky-type p-GaN gate high-electron-mobility transistors (HEMTs) are presented based on fast pulsed ${I}$ – ${V}$ measurement and consecutive switching measurement. It is found that the high ${I}_{ \mathrm{\scriptscriptstyle OFF}}$ under dynamic pulse mode without hole injection is a result of the reduced voltage blocking capabilities (both lateral and vertical) with weaker trapping effect in the buffer, and the dynamic ${I}_{ \mathrm{\scriptscriptstyle OFF}}$ induced by ON-state hole injection is caused by further increased lateral conductivity through the buffer from source to drain. The corresponding behaviors under continuous waveforms with different switching conditions are analyzed to identify effective approaches for the suppression of dynamic ${I}_{ \mathrm{\scriptscriptstyle OFF}}$ in practical switching operations. A higher temperature is shown to be beneficial to the reduction of the dynamic ${I}_{ \mathrm{\scriptscriptstyle OFF}}$ induced by ON-state hole injection. To completely eliminate the dynamic ${I}_{ \mathrm{\scriptscriptstyle OFF}}$ caused by ON-state hole injection and minimize the OFF-state power consumption in practical power switching applications, a sufficiently large negative OFF-state gate bias (e.g., ${V}_{\text {GS}, \mathrm{\scriptscriptstyle OFF}}\le -{3}$ V) is recommended in the gate driver turn-off voltage design for the Schottky-type p-GaN gate HEMTs.

Effect of Source Electrostatic Interaction on the Off-State Leakage Current of p-GaN Gate HEMTs

Gate/Drain Coupled Barrier Lowering Effect and Negative Threshold Voltage Shift in Schottky-Type P-Gan Gate HEMT

Mechanism of Leakage Current Increase in P-Gan Gate AlGaN/GaN Power Devices Induced by ON-state Gate Bias

Gate Leakage Mechanisms in Normally off P-Gan/algan/gan High Electron Mobility Transistors

Analysis and modeling of the influence of gate leakage current on threshold voltage and subthreshold swing in p-GaN gate AlGaN/GaN high electron mobility transistors

Dynamic OFF-State Current (dynamic ${I}_{ \mathrm{\scriptscriptstyle OFF}}$ ) in ${p}$ -Gan Gate HEMTs with an Ohmic Gate Contact

Investigations of the gate-instability characteristics in Schottky/ohmic type p-GaN gate normally-off AlGaN/GaN HEMTs

Evaluation of Trapping Behaviors in Forward Biased Schottky-Type p-GaN Gate HEMTs

Dynamic gate leakage current of p-GaN Gate AlGaN/GaN HEMT under positive bias Conditions

Buffer-Induced Time-Dependent OFF-State Leakage in AlGaN/GaN High Electron Mobility Transistors on Silicon

Impact of Instability of Schottky-Type p-GaN Gate HEMTs on Switching Behaviors

Bidirectional Threshold Voltage Shift and Gate Leakage in 650 V P-Gan AlGaN/GaN HEMTs: the Role of Electron-Trapping and Hole-Injection

Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization

Analysis of Drain-Dependent Threshold Voltage and False Turn-On of Schottky-Type P-Gan Gate HEMT in Bridge-Leg Circuit

Charge Trapping Related Channel Modulation Instability in P-GaN Gate HEMTs.

Gate Current Transport in Enhancement-Mode P-N Junction/AlGaN/GaN (PNJ) HEMT

Characterization of Dynamic $i_{\text{off}}$ in Schottky-Type $P$-Gan Gate HEMTs

Investigation of Dynamic ${I}_{ \mathrm{\scriptscriptstyle OFF}}$ under Switching Operation in Schottky-Type P-Gan Gate HEMTs

The I D Instability Induced by Reverse Conduction Stress in p-GaN Gate HEMTs

Study on Single Event Effects of Enhanced GaN HEMT Devices under Various Conditions

Degradation Mechanisms of Gate Leakage in GaN-Based HEMTs at Low Dose Rate Irradiation