Abstract:Highly stable threshold voltage $({V}_{\text {TH}})$ characteristics are an essential reliability requirement for p -GaN/AlGaN/GaN high-electron-mobility transistors (p-GaN HEMTs) to withstand various gate bias stresses for power applications. In this work, we demonstrate high- ${V}_{\text {TH}}$ (3.0 V) p-GaN HEMTs with robust ${V}_{\text {TH}}$ stability by p -GaN gate engineering via Mg doping and activation. The ${V}_{\text {TH}}$ degradation rates of the resulting device under both pulsed- ${I}/{V}$ and bias temperature instability (BTI) stress conditions are less than 10% at high temperatures up to 150°, which is much lower than that of conventional Schottky-type p -GaN HEMTs (20%–30%). Such notable ${V}_{\text {TH}}$ characteristics are due to the impact ionization (I.I.)-dependent hole compensation under certain gate stress, which effectively alleviates the electron trapping effect and reduces positive ${V}_{\text {TH}}$ shift. The I.I. occurring in the fully depleted p -GaN layer has been confirmed by both positive temperature-dependent gate breakdown characteristics and numerical simulations. Furthermore, shallow- and deep-level hole traps are identified in the gate-stack of high- ${V}_{\text {TH}}$ devices by performing the deep-level transient spectroscopy (DLTS) technique. Consequently, the trapping effect associated with hole traps may also alleviate the undesired electron-trapping-induced ${V}_{\text {TH}}$ shift. These results provide a critical understanding of the ${V}_{\text {TH}}$ stability of the high- ${V}_{\text {TH}}$ p -GaN HEMTs (HVT-HEMTs) and important design guidance for commercial device development.

Bidirectional Threshold Voltage Shift and Gate Leakage in 650 V P-Gan AlGaN/GaN HEMTs: the Role of Electron-Trapping and Hole-Injection

Time-Resolved Threshold Voltage Instability of 650-V Schottky Type p-GaN Gate HEMT Under Temperature-Dependent Forward and Reverse Gate Bias Conditions

Mechanism of Threshold Voltage Shift in ${p}$ -Gan Gate AlGaN/GaN Transistors

Positive VTH shift in Schottky p-GaN Gate power HEMTs: Dependence on Temperature, Bias and Gate leakage

Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in ${p}$ -Gan Gate HEMTs

Analysis and modeling of the influence of gate leakage current on threshold voltage and subthreshold swing in p-GaN gate AlGaN/GaN high electron mobility transistors

Gate/Drain Coupled Barrier Lowering Effect and Negative Threshold Voltage Shift in Schottky-Type P-Gan Gate HEMT

Influence of the carrier behaviors in p-GaN gate on the threshold voltage instability in the normally off high electron mobility transistor

High-VTH E-Mode GaN HEMTs with Robust Gate-Bias-Dependent VTH Stability Enabled by Mg-Doped P-Gan Engineering

Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

Threshold Voltage Instability After Double Pulse Test Under Different OFF-State Drain Voltages and ON-State Drain Currents in p-GaN Gate AlGaN/GaN HEMT

Observation and Analysis of Anomalous V TH Shift of p-GaN Gate HEMTs Under off-State Drain Stress

Impact of Hole-Deficiency and Charge Trapping on Threshold Voltage Stability of P-Gan HEMT under Reverse-bias Stress

OFF-State Drain-Voltage-Stress-Induced VTH Instability in Schottky-Type P-Gan Gate HEMTs

Abnormal Temperature and Bias Dependence of Threshold Voltage Instability in p-GaN/AlGaN/GaN HEMTs

Analysis of VTH Degradation and Recovery Behaviors of P-Gan Gate HEMTs under Forward Gate Bias

Impact of Carrier Injections on the Threshold Voltage in P-Gan Gate AlGaN/GaN Power HEMTs

Time-Resolved Extraction of Negatively Shifted Threshold Voltage in Schottky-Type P-Gan Gate HEMT Biased at High VDS

Threshold Voltage Stability Enhancing Technology for p-GaN HEMTs Using Hybrid Gate Structure

Gate Current Transport in Enhancement-Mode P-N Junction/AlGaN/GaN (PNJ) HEMT

Threshold Voltage Instability of Enhancement-Mode GaN Buried <i>p</i>-Channel MOSFETs