Abstract:GaN power transistors are attracting increasing attention for next-generation power switching applications. However, GaN power transistors should not be regarded as a direct replacement for silicon power metal–oxide–semiconductor field-effect transistors, since the unique properties of GaN power transistors require special treatment. In this work we review a unique and critical property of GaN power transistors, the dynamic threshold voltage (V th). GaN power transistors feature a p-GaN gate structure, while the gate metal contacts the p-GaN layer through a Schottky junction. This unique p-GaN gate structure is distinctively different from the silicon metal–oxide–semiconductor gate structure in that the p-GaN layer is actually a floating region without direct electrical contact to the external electrodes of the device. The floating p-GaN layer enables a charge storage process during the switching operation of a p-GaN gate high-electron-mobility transistor. Through carefully designed experiments, the strong correlation between charge storage and the dynamic V th shift has been revealed; this also serves as an approach to accurately predict the dynamic V th during switching operation. The influence of the dynamic V th on power switching applications is discussed. For example, with a positive dynamic V th shift, the reverse conduction voltage of a GaN power transistor is significantly increased, adding to the power loss. This positive V th shift also demands a sufficiently high gate drive voltage to ensure that the GaN power transistor can be fully turned on, which reduces the safety margin for the gate reliability of the device. To design a GaN based power switching circuit, accurate simulation of the device/circuit characteristics is necessary. Circuit simulations that do not consider the dynamic V th lead to a large deviation from the measurement circuit characteristics. We demonstrate that by incorporating the dynamic V th into the circuit model this deviation can be effectively eliminated.

Impact of Carrier Injections on the Threshold Voltage in P-Gan Gate AlGaN/GaN Power HEMTs

Mechanism of Threshold Voltage Shift in ${p}$ -Gan Gate AlGaN/GaN Transistors

Bidirectional Threshold Voltage Shift and Gate Leakage in 650 V P-Gan AlGaN/GaN HEMTs: the Role of Electron-Trapping and Hole-Injection

Demonstration of Electron/Hole Injections in the Gate of $P$-Gan/algan/gan Power Transistors and Their Effect on Device Dynamic Performance

Time-Resolved Threshold Voltage Instability of 650-V Schottky Type p-GaN Gate HEMT Under Temperature-Dependent Forward and Reverse Gate Bias Conditions

Influence of the carrier behaviors in p-GaN gate on the threshold voltage instability in the normally off high electron mobility transistor

Carrier Transport Mechanisms Underlying the Bidirectional ${V}_{mathrm{{TH}}}$ Shift in p-GaN Gate HEMTs Under Forward Gate Stress

Analysis of VTH Degradation and Recovery Behaviors of P-Gan Gate HEMTs under Forward Gate Bias

Effect of X-Ray Irradiation on Threshold Voltage of AlGaN/GaN HEMTs with pGaN and MIS Gate

Time-Dependent Threshold Voltage Instability Mechanisms of P-Gan Gate AlGaN/GaN HEMTs under High Reverse Bias Conditions

Total Ionizing Dose and Annealing Effects on Shift for p-GaN Gate AlGaN/GaN HEMTs

Total ionizing dose effects in passivated and unpassivated AlGaN/GaN HEMTs

Total-Ionizing-Dose Radiation Effect on Dynamic Threshold Voltage in p-GaN Gate HEMTs

Positive VTH shift in Schottky p-GaN Gate power HEMTs: Dependence on Temperature, Bias and Gate leakage

Gate/Drain Coupled Barrier Lowering Effect and Negative Threshold Voltage Shift in Schottky-Type P-Gan Gate HEMT

Threshold Voltage Instability After Double Pulse Test Under Different OFF-State Drain Voltages and ON-State Drain Currents in p-GaN Gate AlGaN/GaN HEMT

Mechanism of Leakage Current Increase in P-Gan Gate AlGaN/GaN Power Devices Induced by ON-state Gate Bias

Time-Resolved Extraction of Negatively Shifted Threshold Voltage in Schottky-Type P-Gan Gate HEMT Biased at High VDS

Abnormal Temperature and Bias Dependence of Threshold Voltage Instability in p-GaN/AlGaN/GaN HEMTs

Principles and Impacts of Dynamic Threshold Voltage in a P-Gan Gate High-Electron-mobility Transistor

Effect of Hole-Injection on Leakage Degradation in a &Lt;inline-Formula> &Lt;tex-Math Notation="latex">$p$ &Lt;/tex-Math> &Lt;/inline-Formula>-gan Gate AlGaN/GaN Power Transistor