Abstract:Applied Physics Letters, Volume 120, Issue 20, May 2022. In this Letter, the effects of trap states in AlN/GaN superlattice channel HEMTs (high electron mobility transistors) under total ionizing dose with γ-irradiation have been systematically investigated. After 1 Mrad γ-irradiation with a dose rate of 50 rad/s, negative drifts in threshold voltage and C–V characteristics are observed. Simultaneously, the two-dimensional electron gas sheet density of the upper channel increases from 5.09 × 1012 to 5.47 × 1012 cm−2, while that of the lower channel decreases from 4.41 × 1012 to 3.86 × 1012 cm−2, respectively. Furthermore, frequency-dependent capacitance and conductance measurements are adopted to investigate the evolution of trap states in an electron channel. The trap state density (DT = 0.21–0.88 × 1013 cm−2 eV−1) is over the ET range from 0.314 to 0.329 eV after irradiation for the upper channel, while the trap state in the lower channel decreases from 4.54 × 1011 cm−2 eV−1 at ET = 0.230 eV to 2.38 × 1011 cm−2 eV−1 at ET = 0.278 eV. The density (1.39–1.54 × 1011 cm−2 eV−1) of trap states with faster τT (0.033–0.037 μs) generated in a lower channel is located at shallower ET between 0.227 and 0.230 eV. The results reveal the mechanism of trap states in the channel, affecting the performance of HEMTs, which can provide a valuable understanding for hardening in space radiation.

Total-Ionizing-Dose Radiation Effect on Dynamic Threshold Voltage in p-GaN Gate HEMTs

Total ionizing dose effects in passivated and unpassivated AlGaN/GaN HEMTs

Total Ionizing Dose and Annealing Effects on Shift for p-GaN Gate AlGaN/GaN HEMTs

Effect of X-Ray Irradiation on Threshold Voltage of AlGaN/GaN HEMTs with pGaN and MIS Gate

Incorporation of total ionizing dose effects into a compact model for p-GaN gate high electron mobility transistors

Degradation Mechanisms of Gate Leakage in GaN-Based HEMTs at Low Dose Rate Irradiation

Gate Bias and Length Dependences of Total Ionizing Dose Effects in InGaAs FinFETs on Bulk Si

Total Ionizing Dose Effects on the Threshold Voltage of GaN Cascode Devices

Research on the Synergistic Effect of Total Ionization and Displacement Dose in GaN HEMT Using Neutron and Gamma-Ray Irradiation

Threshold Voltage Instability After Double Pulse Test Under Different OFF-State Drain Voltages and ON-State Drain Currents in p-GaN Gate AlGaN/GaN HEMT

Influence of the carrier behaviors in p-GaN gate on the threshold voltage instability in the normally off high electron mobility transistor

Influence of LDD Spacers and H+Transport on the Total-Ionizing-Dose Response of 65-Nm MOSFETs Irradiated to Ultrahigh Doses

Total-Ionizing-Dose Response of Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors

OFF-State Drain-Voltage-Stress-Induced VTH Instability in Schottky-Type P-Gan Gate HEMTs

Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in ${p}$ -Gan Gate HEMTs

Observation and Analysis of Anomalous V TH Shift of p-GaN Gate HEMTs Under off-State Drain Stress

Analysis and modeling of the influence of gate leakage current on threshold voltage and subthreshold swing in p-GaN gate AlGaN/GaN high electron mobility transistors

Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization

Investigation of TID effects on electrical characteristics of GaN MIS-HEMT with LPCVD-grown SiN passivation

Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer

Characterization of trap states in AlN/GaN superlattice channel high electron mobility transistors under total-ionizing-dose with 60Co γ-irradiation