Threshold Voltage Instability After Double Pulse Test Under Different OFF-State Drain Voltages and ON-State Drain Currents in p-GaN Gate AlGaN/GaN HEMT

Chih-wei Chen,Hao-Hsuan Lo,Yue-ming Hsin
DOI: https://doi.org/10.1149/2162-8777/ad49d6
IF: 2.2
2024-05-12
ECS Journal of Solid State Science and Technology
Abstract:This study investigated threshold voltage (VTH) instability in a Schottky p-GaN gate AlGaN/GaN high-electron-mobility transistor (HEMT) by using the double pulse test (DPT) with a 1-μs pulse width in the ON-state and OFF-state. OFF-state drain biases (VDS,OFF) of 100–400 V and ON-state drain currents of ID,ON 1–16 A were applied in the DPT to observe the post-DPT VTH shift. The ON-state currents did not strongly influence the device's characteristics after the DPT. However, the OFF-state voltages, particularly VDS,OFF = 100 and 200 V, exerted notable effects. A TCAD simulation was conducted to investigate the mechanism underlying the VTH shift after the DPT at various VDS,OFF and ID,ON levels.
materials science, multidisciplinary,physics, applied
What problem does this paper attempt to address?