Abstract:In this study, we propose a simple measurement technique to quantitatively measure the time taken by threshold voltage of normally-off p-GaN AlGaN/GaN HEMTs to recover from a nominal operational gate stress-induced instability. The proposed technique eliminates the requirement to perform a full transfer characteristic sweep post-stress, thereby eliminating the measurement-induced instability effect, often colluding precise recovery time measurement. The rate of recovery and extracted recovery times hold significance in empirically correlating the location of traps in the p-GaN or AlGaN barrier region causing VTH instability. The gate of the HEMT is stressed at nominal operational drive voltages 1.5 V, 2 V, and 4 V for various time intervals from 500 μs to 100 s, and the time taken for the drain current to recover to prestress levels measured at near-threshold voltage (~1.1 VTH) is measured as the threshold voltage recovery time. With increasing gate stress voltages, 2DEG gets trapped at relatively deeper trap energy levels at the AlGaN/GaN interface requiring more emission time during the process of recovery, mandating larger recovery times. At higher stress voltage of 4 V, the Schottky gate leakage current is high enough enabling injected holes to cross the AlGaN barrier and counter-compensate for the deeply trapped 2DEG, requiring relatively the same recovery times as lower stress voltages where the gate leakage is negligibly small. With increasing stress time, the amount of 2DEG trapped increases, requiring more recovery time to de-trap and beyond a certain time, saturation of the trap density occurs causing the recovery time to plateau.

Toward the Understanding on Threshold Voltage Drift Mechanisms in GaN MOSc-HEMTs Through the Influence of Device Architecture

Research on the Reliability of Threshold Voltage Based on GaN High-Electron-Mobility Transistors

Influence of the carrier behaviors in p-GaN gate on the threshold voltage instability in the normally off high electron mobility transistor

A Study on the Threshold Voltage Shift under Gate-pulse Stress in D-mode GaN MIS-HEMTs

Experimental and Numerical Analysis of Off-State Bias Induced Instabilities in Vertical GaN-on-Si Trench MOSFETs

Investigation of the Threshold Voltage Drift in Enhancement Mode Gan Mosfet under Negative Gate Bias Stress

OFF-State Drain-Voltage-Stress-Induced VTH Instability in Schottky-Type P-Gan Gate HEMTs

Threshold Voltage Instability of Enhancement-Mode GaN Buried <i>p</i>-Channel MOSFETs

Observation and Analysis of Anomalous V TH Shift of p-GaN Gate HEMTs Under off-State Drain Stress

Evaluation on Temperature-Dependent Transient VT Instability in p-GaN Gate HEMTs under Negative Gate Stress by Fast Sweeping Characterization

Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

Dependence of ${v}_{\text {TH}}$ Stability on Gate-Bias under Reverse-Bias Stress in E-mode GaN MIS-FET

Threshold Voltage Recovery Time Measurement Technique Post VTH Instability in Normally-Off p-Gate GaN High Electron Mobility Transistors

Threshold Voltage Instability After Double Pulse Test Under Different OFF-State Drain Voltages and ON-State Drain Currents in p-GaN Gate AlGaN/GaN HEMT

Time-dependent Threshold Voltage Drift Induced by Interface Traps in Normally-off GaN MOSFET with Different Gate Recess Technique

High-VTH E-Mode GaN HEMTs with Robust Gate-Bias-Dependent VTH Stability Enabled by Mg-Doped P-Gan Engineering

Positive VTH shift in Schottky p-GaN Gate power HEMTs: Dependence on Temperature, Bias and Gate leakage

Impact of Hole-Deficiency and Charge Trapping on Threshold Voltage Stability of P-Gan HEMT under Reverse-bias Stress

Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization

Analysis of abnormal threshold voltage shift induced by surface donor state in GaN HEMT on SiC substrate

Impact of Instability of Schottky-Type p-GaN Gate HEMTs on Switching Behaviors