Abstract:We analyzed the threshold-voltage dynamic instabilities induced by off-state stress in pseudo-vertical GaN-on-Si Trench mosfets (TMOS). Extensive measurements revealed that off-state stress experiments induce a progressive increase of threshold voltage (VT), that is fully recoverable only after high-temperature cycles, so that it can appear as permanent degradation at room temperature. VT increase is found to be strongly affected by drain bias and negligibly influenced by gate bias (below threshold). Activation energy (EA) extracted from high-temperature VT recovery experiments was determined to be ≈1 eV. We further characterized pseudo-vertical p–n junction diodes fabricated onto the same wafer as the TMOS's by means of capacitance isothermal spectroscopy. This experiment revealed depletion capacitance (CDEP) instabilities with the same EA as that characterizing the VT instability, leading to the conclusion that trap states present in the epitaxy are the cause of both observations. Numerical device simulations guided the physical interpretation of the observed phenomena, i.e., donor traps at 1 eV from the conduction band and localized in the p-layer lead to both VT and CDEP instabilities in the TMOS and in the p–n diode, respectively, by dynamically modulating the effective p-type doping density in the former and the effective depletion layer width in the latter.

Time-dependent Threshold Voltage Drift Induced by Interface Traps in Normally-off GaN MOSFET with Different Gate Recess Technique

Study of the Influence of Different Gate Oxide Traps on Threshold Voltage Drift of SiC MOSFET Based on Transient Current

Correlation Between Border Traps and Exposed Surface Properties in Gate Recessed Normally-off Al2O3/GaN MOSFET

Investigation of the Threshold Voltage Drift in Enhancement Mode Gan Mosfet under Negative Gate Bias Stress

Toward the Understanding on Threshold Voltage Drift Mechanisms in GaN MOSc-HEMTs Through the Influence of Device Architecture

Quantitative Evaluation of Slow Traps Near Ge Mos Interfaces by Using Time Response of Mos Capacitance

On-The-Fly Interface Trap Measurement And Its Impact On The Understanding Of Nbti Mechanism For P-Mosfets With Sion Gate Dielectric

Threshold Voltage Instability of Enhancement-Mode GaN Buried <i>p</i>-Channel MOSFETs

Insight into the suppression mechanism of bulk traps in Al2O3 gate dielectric and its effect on threshold voltage instability in Al2O3/AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors

Comparison of Methods for Accurate Characterization of Interface Traps in GaN MOS-HFET Devices

Trap Characterization of Trench-Gate SiC MOSFETs Based on Transient Drain Current

An Accurate Method To Extract And Separate Interface And Gate Oxide Traps By The Mosfet Subthreshold Current

Buffer-Induced Time-Dependent OFF-State Leakage in AlGaN/GaN High Electron Mobility Transistors on Silicon

High-Performance Normally-Off ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ MOSFET Using a Wet Etching-Based Gate Recess Technique

Evaluation of Trapping Behaviors in Forward Biased Schottky-Type p-GaN Gate HEMTs

Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD

A Study on the Threshold Voltage Shift under Gate-pulse Stress in D-mode GaN MIS-HEMTs

Impact of interfacial trap density of states on the stability of amorphous InGaZnO-based thin-film transistors

Evaluation on Temperature-Dependent Transient VT Instability in p-GaN Gate HEMTs under Negative Gate Stress by Fast Sweeping Characterization

Experimental and Numerical Analysis of Off-State Bias Induced Instabilities in Vertical GaN-on-Si Trench MOSFETs

Effects of SiON/III-nitride Interface Properties on Device Performances of GaN-based Power Field-Effect Transistors