Abstract:Enhancement-mode (E-mode) GaN MOS-HEMTs using recess process typically face the challenge of precise thickness control, surface roughness issue, and interface traps, all of which could lead to the degradation of the device performance and cause reliability issues. In this article, we use a combined process of atomic layer etching (ALE) technique and atomic layer deposited (ALD) HfSiO dielectric. ALE is repeated oxidation and dry etching process with minimal surface damage, leading to a precisely controlled low-damage recess channel area. The fabricated AlGaN/GaN MOS-HEMTs exhibit E-mode operation with a positive threshold voltage (V-th) of +2.1 V with small V-th dispersion for different devices, an ultrahigh drain current ON-OFF ratio over 1010 and a low ON-resistance (R-ON) of 11.5 Omega . mm at gate-to-drain length (L-GD) of 25 mu m. Source field plate (SFP) structure is employed to reduce the charge trapping process and improve the reliability at high voltages. The current collapse of the E-mode device with SFP structure can be effectively suppressed due to the optimized redistribution of the peak electric field in the gate-to-drain access region, where a significantly improved dynamic R-ON of only 1.17 times increase from the static R-ON after OFF-state V-DS stress of 600 V. Moreover, the enhanced vertical electric field with decreased AlGaN barrier thickness and the positive shift in threshold voltage for the E-mode device can effectively suppress the current collapse, which outperforms the depletion-mode counterpart. The breakdown voltage reaches a considerable value of 1560 V at an OFF-state current density of 1 mu A/mm.

High-Performance Normally-Off ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ MOSFET Using a Wet Etching-Based Gate Recess Technique

Normally-off hybrid Al2O3/GaN MOSFET on silicon substrate based on wet-etching

Fabrication of Normally off Algan/Gan Mosfet Using A Self-Terminating Gate Recess Etching Technique

Demonstration of Normally-Off Recess-Gated AlGaN/GaN MOSFET Using GaN Cap Layer As Recess Mask

Normally-OFF AlGaN/GaN MOS-HEMT with a Two-Step Gate Recess

Improved Fabrication of Fully-Recessed Normally-off SiN/SiO2/GaN MISFET Based on the Self-Terminated Gate Recess Etching Technique

900 V/1.6 ${\rm M}\omega\cdot{\rm Cm}^{2}$ Normally off ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ MOSFET on Silicon Substrate

Enhancement-mode GaN-on-Silicon MOS-HEMT using pure wet etch technique

Channel Engineering of Normally-OFF AlGaN/GaN MOS-HEMTs by Atomic Layer Etching and High- $\kappa$ Dielectric

Gate-Recessed Normally-OFF GaN MOSHEMT with Improved Channel Mobility and Dynamic Performance Using AlN/Si 3 N 4 As Passivation and Post Gate-Recess Channel Protection Layers

Gate-Recessed Normally OFF GaN MOSHEMT With High-Temperature Oxidation/Wet Etching Using LPCVD Si3N4 as the Mask

Improving Performance and Breakdown Voltage in Normally-Off GaN Recessed Gate MIS-HEMTs Using Atomic Layer Etching and Gate Field Plate for High-Power Device Applications

Improved Performance of Fully-Recessed Normally-off LPCVD SiN/GaN MISFET Using N2O Plasma Pretreatment

Normally-off Fully Recess-Gated GaN Metal–insulator–semiconductor Field-Effect Transistor Using Al2O3/Si3N4 Bilayer As Gate Dielectrics

An "Ohmic-First" Self-Terminating Gate-Recess Technique for Normally-off Al2O3/GaN MOSFET

Control of Surface Chemistry in Recess Etching Towards Normally‐OFF GaN MIS‐HEMTs

High Performance Submicron Inversion-Type Enhancement-Mode InGaAs MOSFETs with ALD Al2O3, HfO2 and HfAlO As Gate Dielectrics

Improved Current Collapse in Recessed AlGaN/GaN MOS-HEMTs by Interface and Structure Engineering

GaN metal-oxide-semiconductor field-effect-transistor with atomic layer deposited Al2O3 as gate dielectric

Improved Performance of Enhancement-Mode GaN MIS-FET Based on a Self-Terminating Gate Recess Etching Technique with in Situ NH3 Pre-Treatment

Normally-Off InAlN/GaN Fin-MOSHEMT with Fluorine Treatment