Abstract:In this article, we demonstrate normally-OFF p-GaN gate high electron mobility transistors (HEMTs) on Si with an ultrahigh breakdown voltage (<inline-formula> <tex-math notation="LaTeX">${V}_{BR}$ </tex-math></inline-formula>) and excellent saturation drain current. Benefiting from the optimized material growth of high-resistivity buffer, effective Al2O3 surface passivation with suppressed OFF-state leakage current, and proper management of the electric field on the p-GaN gate edge, the device with a gate–drain distance of <inline-formula> <tex-math notation="LaTeX">$18.5~\mu \text{m}$ </tex-math></inline-formula> exhibits a <inline-formula> <tex-math notation="LaTeX">${V}_{BR}$ </tex-math></inline-formula> of 1344 V at <inline-formula> <tex-math notation="LaTeX">${I}_{D}$ </tex-math></inline-formula> of <inline-formula> <tex-math notation="LaTeX">$1~\mu \text{A}$ </tex-math></inline-formula>/mm with grounded substrates, the highest among all the reported normally-OFF GaN-on-Si transistors. Well-restored high-density 2-D electron gas and efficient gate modulation enable the device with a high <inline-formula> <tex-math notation="LaTeX">${I}_{DS,max}$ </tex-math></inline-formula> of 450 mA/mm and a low specific ON-resistance of 3.92 <inline-formula> <tex-math notation="LaTeX">$\text{m}\Omega \cdot $ </tex-math></inline-formula>cm2. Moreover, a large threshold voltage of 1.6 V (at <inline-formula> <tex-math notation="LaTeX">${I}_{D}$ </tex-math></inline-formula> of <inline-formula> <tex-math notation="LaTeX">$10~\mu \text{A}$ </tex-math></inline-formula>/mm) and a steep subthreshold slope of 66 mV/dec have been achieved, with negligible threshold voltage shift upon long-term forward gate stress at 150 °C. These results illustrate the great potential of p-GaN gate HEMTs on Si for beyond 600-V applications.

Enhancement-mode GaN-on-Silicon MOS-HEMT using pure wet etch technique

CMOS-compatible Ehancement-Mode GaN-on-Si MOS-HEMT with High Breakdown Voltage (930V) Using Thermal Oxidation and TMAH Wet Etching

Normally-off hybrid Al2O3/GaN MOSFET on silicon substrate based on wet-etching

High-Performance Normally-Off ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ MOSFET Using a Wet Etching-Based Gate Recess Technique

Improving Performance and Breakdown Voltage in Normally-Off GaN Recessed Gate MIS-HEMTs Using Atomic Layer Etching and Gate Field Plate for High-Power Device Applications

Channel Engineering of Normally-OFF AlGaN/GaN MOS-HEMTs by Atomic Layer Etching and High- $\kappa$ Dielectric

Characterization of 880 V Normally off GaN MOSHEMT on Silicon Substrate Fabricated with a Plasma-Free, Self-Terminated Gate Recess Process

Improved Current Collapse in Recessed AlGaN/GaN MOS-HEMTs by Interface and Structure Engineering

5.3A/400V Normally-off AlGaN/GaN-on-Si MOS-HEMT with High Threshold Voltage and Large Gate Swing

1300 V Normally-OFF p-GaN Gate HEMTs on Si With High ON-State Drain Current

A high breakdown voltage AlGaN/GaN MOSHEMT using thermal oxidized Al-Ti as the gate insulator

Enhancement-Mode InAlN/GaN Power MOSHEMT on Silicon with Schottky Tri-Drain Extension

Fabrication of Normally off Algan/Gan Mosfet Using A Self-Terminating Gate Recess Etching Technique

AlGaN/GaN E-mode MOS-HEMT Using Atomic-Layer-Deposited HfLaOx As Gate Dielectric

Kilovolt GaN MOSHEMT on Silicon Substrate with Breakdown Electric Field Close to the Theoretical Limit

Normally-Off InAlN/GaN Fin-MOSHEMT with Fluorine Treatment

High Breakdown AlGaN/GaN MOSHEMT with Thermal Oxidized Ni/Ti As Gate Insulator

Enhancement-Mode Gan Double-Channel Mos-Hemt with Low On-Resistance and Robust Gate Recess

Normally-OFF AlGaN/GaN MOS-HEMT with a Two-Step Gate Recess

900 V/1.6 Normally Off MOSFET on Silicon Substrate

High-current-density high-voltage normally-off AlGaN/GaN hybrid-gate HEMT with low on-resistance