Abstract:In this article, we demonstrate normally-OFF p-GaN gate high electron mobility transistors (HEMTs) on Si with an ultrahigh breakdown voltage (<inline-formula> <tex-math notation="LaTeX">${V}_{BR}$ </tex-math></inline-formula>) and excellent saturation drain current. Benefiting from the optimized material growth of high-resistivity buffer, effective Al2O3 surface passivation with suppressed OFF-state leakage current, and proper management of the electric field on the p-GaN gate edge, the device with a gate–drain distance of <inline-formula> <tex-math notation="LaTeX">$18.5~\mu \text{m}$ </tex-math></inline-formula> exhibits a <inline-formula> <tex-math notation="LaTeX">${V}_{BR}$ </tex-math></inline-formula> of 1344 V at <inline-formula> <tex-math notation="LaTeX">${I}_{D}$ </tex-math></inline-formula> of <inline-formula> <tex-math notation="LaTeX">$1~\mu \text{A}$ </tex-math></inline-formula>/mm with grounded substrates, the highest among all the reported normally-OFF GaN-on-Si transistors. Well-restored high-density 2-D electron gas and efficient gate modulation enable the device with a high <inline-formula> <tex-math notation="LaTeX">${I}_{DS,max}$ </tex-math></inline-formula> of 450 mA/mm and a low specific ON-resistance of 3.92 <inline-formula> <tex-math notation="LaTeX">$\text{m}\Omega \cdot $ </tex-math></inline-formula>cm2. Moreover, a large threshold voltage of 1.6 V (at <inline-formula> <tex-math notation="LaTeX">${I}_{D}$ </tex-math></inline-formula> of <inline-formula> <tex-math notation="LaTeX">$10~\mu \text{A}$ </tex-math></inline-formula>/mm) and a steep subthreshold slope of 66 mV/dec have been achieved, with negligible threshold voltage shift upon long-term forward gate stress at 150 °C. These results illustrate the great potential of p-GaN gate HEMTs on Si for beyond 600-V applications.

Channel Engineering of Normally-OFF AlGaN/GaN MOS-HEMTs by Atomic Layer Etching and High- $\kappa$ Dielectric

Normally-OFF AlGaN/GaN MIS-HEMTs With Low R ON and V th Hysteresis by Functioning In-situ SiN x in Regrowth Process

O-3-Sourced Atomic Layer Deposition of High Quality Al2o3 Gate Dielectric for Normally-Off Gan Metal-Insulator-Semiconductor High-Electron-Mobility Transistors

High-Performance Normally-Off ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ MOSFET Using a Wet Etching-Based Gate Recess Technique

AlGaN/GaN E-mode MOS-HEMT Using Atomic-Layer-Deposited HfLaOx As Gate Dielectric

High- ${k}$ HfO 2 -Based AlGaN/GaN MIS-HEMTs with Y 2 O 3 Interfacial Layer for High Gate Controllability and Interface Quality

Improved Current Collapse in Recessed AlGaN/GaN MOS-HEMTs by Interface and Structure Engineering

Enhancement-mode GaN-on-Silicon MOS-HEMT using pure wet etch technique

Normally-OFF AlGaN/GaN MOS-HEMT with a Two-Step Gate Recess

Control of Surface Chemistry in Recess Etching Towards Normally‐OFF GaN MIS‐HEMTs

Improving Performance and Breakdown Voltage in Normally-Off GaN Recessed Gate MIS-HEMTs Using Atomic Layer Etching and Gate Field Plate for High-Power Device Applications

Multilayer SiNx passivated Al2O3 gate dielectric featuring a robust interface for ultralong-lifetime AlGaN/GaN HEMT

Normally-off Fully Recess-Gated GaN Metal–insulator–semiconductor Field-Effect Transistor Using Al2O3/Si3N4 Bilayer As Gate Dielectrics

Normally-off hybrid Al2O3/GaN MOSFET on silicon substrate based on wet-etching

Over 1200 V Normally-OFF P-Nio Gated AlGaN/GaN HEMTs on Si with a Small Threshold Voltage Shift

Tri-Gate Normally-Off AlN/GaN HEMTs With 2.36 W/mm of Power Density and 67.5% Power-Added-Efficiency at V d = 12 V

On-chip AlGaN/GaN HEMTs with the Compatible Normally-off p-GaN Gate and Normally-on MIS Gate Fabrication Processes

1300 V Normally-OFF p-GaN Gate HEMTs on Si With High ON-State Drain Current

Gate-Recessed Normally OFF GaN MOSHEMT With High-Temperature Oxidation/Wet Etching Using LPCVD Si3N4 as the Mask

Low On-Resistance Normally-Off GaN Double-Channel Metal–Oxide–Semiconductor High-Electron-Mobility Transistor

Reverse-Blocking Normally-OFF GaN Double-Channel MOS-HEMT with Low Reverse Leakage Current and Low ON-State Resistance