Abstract:A reverse blocking AlGaN/GaN normally-Off MIS-HEMT featuring double-recessed gated Schottky drain was demonstrated on a double-channel HEMT platform. Two recess steps with robust recess depth tolerance are performed to form the MIS-gated Schottky drain. The shallow recess stops at the upper GaN channel layer where a MIS-gated section (i.e. MIS field plate) is formed to suppress the reverse leakage current. The deep recess cuts through the lower 2DEG channel where a metal-2DEG Schottky contact with low turn-on voltage is formed along the sidewall. Since the lower channel is separated from the surface of the shallow recess, the MIS-gated section in the drain maintains a high mobility channel to yield a sheet resistance of 806 Ω/Square. The device exhibits a threshold voltage of +0.6 V at a drain leakage current of 10 μA/mm and +1.9 V from linear extrapolation, and a low differential ON-resistance of ~11 Ω/mm. Owing to the presence of the metal-2DEG Schottky contact and the leakage-suppression MIS field plate in the drain, a low forward turn-on voltage of 0.5 V and a low reverse leakage current of 20 nA/mm (at -100 V) are achieved simultaneously. The device also exhibits a high forward and reverse breakdown voltage of 700 V and -600 V.

Low On-Resistance Normally-Off GaN Double-Channel Metal–Oxide–Semiconductor High-Electron-Mobility Transistor

Enhancement-Mode Gan Double-Channel Mos-Hemt with Low On-Resistance and Robust Gate Recess

Channel Engineering of Normally-OFF AlGaN/GaN MOS-HEMTs by Atomic Layer Etching and High- $\kappa$ Dielectric

Reverse-Blocking Normally-OFF GaN Double-Channel MOS-HEMT with Low Reverse Leakage Current and Low ON-State Resistance

A Novel GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor Featuring Vertical Gate Structure

Gate-Recessed Normally-OFF GaN MOSHEMT with Improved Channel Mobility and Dynamic Performance Using AlN/Si 3 N 4 As Passivation and Post Gate-Recess Channel Protection Layers

Low ON-State Resistance Normally-OFF AlGaN/GaN MIS-HEMTs with Partially Recessed Gate and ZrOₓ Charge Trapping Layer

Double-Channel High-Electron-Mobility Transistor for Linearity Enhancement in RF/Microwave Applications

A GaN HEMT Structure Allowing Self-Terminated, Plasma-Free Etching for High-Uniformity, High-Mobility Enhancement-Mode Devices

12.5 A/350 V Algan/Gan-On-Si Mos-Hemt with Low Specific On-Resistance and Minimal Threshold Hysteresis

An Analytical Investigation on the Charge Distribution and Gate Control in the Normally-Off GaN Double-Channel MOS-HEMT

Critical heterostructure design for low on-resistance normally-off double-channel MOS-HEMT

Gate-Recessed Normally OFF GaN MOSHEMT With High-Temperature Oxidation/Wet Etching Using LPCVD Si3N4 as the Mask

AlGaN/GaN MISHEMTs with AlN Gate Dielectric Grown by Thermal ALD Technique

Normally-OFF AlGaN/GaN MIS-HEMTs With Low R ON and V th Hysteresis by Functioning In-situ SiN x in Regrowth Process

Reverse-blocking AlGaN/GaN Normally-off MIS-HEMT with Double-Recessed Gated Schottky Drain

High-Performance Normally-Off ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ MOSFET Using a Wet Etching-Based Gate Recess Technique

High-current-density high-voltage normally-off AlGaN/GaN hybrid-gate HEMT with low on-resistance

Low Leakage Current and High-Cutoff Frequency AlGaN/GaN MOSHEMT Using Submicrometer-Footprint Thermal Oxidized TiO2/NiO As Gate Dielectric

A Double-Gate AlGaN/GaN HEMT with Improved Dynamic Performance

AlGaN/GaN High Electron Mobility Transistors with a Low Sub-Threshold Swing on Free-Standing GaN Wafer