Abstract:AlGaN/GaN high electron mobility transistors (HEMTs) are grown on 2-inch Si (111) substrates by MOCVD. The stacked AlGaN/AlN interlayer with different AlGaN thickness and indium surfactant doped is designed and optimized to relieve the tensile stress during GaN epitaxial growth. The top 1.0 mu m GaN buffer layer grown on the optimized AlGaN/AlN interlayer shows a crack-free and shining surface. The XRD results show that GaN( 002) FWHM is 480 arcsec and GaN(102) FWHM is 900 arcsec. The AGaN/GaN HEMTs with optimized and non-optimized AlGaN/AlN interlayer are grown and processed for comparison and the dc and rf characteristics are characterized. For the dc characteristics of the device with optimized AlGaN/AlN interlayer, maximum drain current density I-dss of 737mA/mm, peak transconductance G(m) of 185 mS/mm, drain leakage current density I-ds of 1.7 mu A/mm, gate leakage current density I-gs of 24.8 mu A/mm and off-state breakdown voltage V-BR of 67V are achieved with L-g/W-g/L-gs/L-gd = 1/10/1/1 mu m. For the small signal rf characteristics of the device with optimized AlGaN/AlN interlayer, current gain cutoff frequency f(T) of 8.3 GHz and power gain cutoff frequency f(max) of 19.9 GHz are achieved with L-g/W-g/L-gs/L-gd = 1/100/1/1 mu m. Furthermore, the best rf performance with f(T) of 14.5 GHz and f(max) of 37.3 GHz is achieved with a reduced gate length of 0.7 mu m.

AlGaN/GaN High Electron Mobility Transistors with a Low Sub-Threshold Swing on Free-Standing GaN Wafer

Fabrication of AlGaN/GaN High-Electron-mobility Transistors

High-Performance Normally-Off Operation p-GaN Gate HEMT on Free-Standing GaN Substrate

AlN/GaN/InGaN coupling-channel HEMTs with steep subthreshold swing of sub-60 mV/decade

Characteristics of AlGaN/GaN HEMTs Grown by Plasma-Assisted Molecular Beam Epitaxy

Static Characteristics of AlGaN/GaN High Electron Mobility Transistors with Different Thickness of AlGaN Layer

High-Performance GaN HEMTs on Single Crystalline AlN Templates with a 230 Nm Ultra-Thin Buffer and Al2O3/SiO2 Passivation

11.2 W/mm power density AlGaN/GaN high electron-mobility transistors on a GaN substrate

Improved Algan/Gan Hemts Grown on Si Substrates Using Stacked Algan/Aln Interlayer by Mocvd

Current-collapse Suppression and Leakage-Current Decrease in AlGaN/GaN HEMT by Sputter-Tan Gate-Dielectric Layer

Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT

AlGaN/GaN MISHEMTs with AlN Gate Dielectric Grown by Thermal ALD Technique

MBE-grown AlGaN/GaN HEMTs with 186 mS/mm Transcond uctance

0.2- AlGaN/GaN High Electron-Mobility Transistors With Atomic Layer Deposition Passivation

Suppressing the Leakage of GaN HEMTs on Single-Crystalline AlN Templates by Buffer Optimization

Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al2O3/AlN Composite Gate Insulator

High-performance InAlGaN/GaN Enhancement-Mode MOS-HEMTs Grown by Pulsed Metal Organic Chemical Vapor Deposition

Over 1200 V Normally-OFF P-Nio Gated AlGaN/GaN HEMTs on Si with a Small Threshold Voltage Shift

Demonstration of AlGaN/GaN HEMTs on Vicinal Sapphire Substrates with Large Misoriented Angles

Current collapse suppression in AlGaInN/GaN HEMTs with thin unintentionally doped GaN channel and AlN back barrier grown on single-crystal AlN substrate

High-Temperature Characterization of AlGaN Channel High Electron Mobility Transistor Based on Silicon Substrate