Abstract:This letter demonstrates a novel enhancement-mode (E-mode) tri-gate nanowire InAlN/GaN MOSHEMT with ultrasonic spray pyrolysis deposition (USPD) deposited Al 2 O 3 as the gate dielectric layer. The proposed device reveals a threshold voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {TH}}$ </tex-math></inline-formula> ) of +2.3 V and a maximum drain current ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{D, \text {max}}$ </tex-math></inline-formula> ) of 705 mA/mm. It also exhibits superior electrical performances, including a high ON-state/ OFF-state current ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{ {{ \scriptscriptstyle {\text {ON}}}}}/{I}_{ {{ \scriptscriptstyle {\text {OFF}}}}}$ </tex-math></inline-formula> ) ratio of 10 9 –10 10 , a steep subthreshold swing (SS) of 65 mV/decade, and a large breakdown voltage (BV) of 800 V with a leakage current of 0.7 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{A}$ </tex-math></inline-formula> /mm while keeping a low-specific ON-resistance ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${R}_{ {{ \scriptscriptstyle {\text {ON}}}}, \text {sp}}$ </tex-math></inline-formula> ) of 1.04 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{m}\Omega \cdot \text {cm}^{\text {2}}$ </tex-math></inline-formula> . This novel E-mode device presents a great potential for power device applications.

High-performance InAlGaN/GaN Enhancement-Mode MOS-HEMTs Grown by Pulsed Metal Organic Chemical Vapor Deposition

Growth of Ingan and Double Heterojunction Structure with Ingan Back Barrier

AlGaN/AlN/GaN/InGaN/GaN DH-HEMTs with Improved Mobility Grown by MOCVD

Investigation of enhancement mode HfO2 insulated N-polarity GaN/InN/GaN/In0.9Al0.1N heterostructure MISHEMT for high-frequency applications

Improved DC and RF performance of AlGaN/GaN HEMTs grown by MOCVD on sapphire substrates

MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer As Channel on SiC

AlGaN/GaN/InGaN/GaN DH‐HEMTs Structure with an AlN Interlayer Grown by MOCVD

MOCVD grown AlGaN/AlN/GaN HEMT structure with compositionally step-graded AlGaN barrier layer

Fabrication of AlGaN/GaN High-Electron-mobility Transistors

Low contact resistance and high breakdown voltage of AlGaN/GaN HEMT grown on silicon using both AlN/GaN superlattice and Al0.07Ga0.93N back barrier layer

MOCVD-grown High-Mobility Al0.3Ga0.7N/AlN/GaN HEMT Structure on Sapphire Substrate

AlGaN/GaN High Electron Mobility Transistors with a Low Sub-Threshold Swing on Free-Standing GaN Wafer

CMOS-compatible Ehancement-Mode GaN-on-Si MOS-HEMT with High Breakdown Voltage (930V) Using Thermal Oxidation and TMAH Wet Etching

Enhancement-Mode Gan Double-Channel Mos-Hemt with Low On-Resistance and Robust Gate Recess

High Electron Mobility in Nearly Lattice-Matched AlInN∕AlN∕GaN Heterostructure Field Effect Transistors

Enhanced Device Performance of AlGaN/GaN HEMTs Using Thermal Oxidation of Electron-Beam Deposited Aluminum for Gate Oxide

A high breakdown voltage AlGaN/GaN MOSHEMT using thermal oxidized Al-Ti as the gate insulator

Enhanced Performances of AlGaN/GaN HEMTs with Dielectric Engineering of HfZrOx

Enhancement-Mode Tri-Gate Nanowire InAlN/GaN MOSHEMT for Power Applications

High-Performance N-Polar GaN/AlGaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors with Low Surface Roughness Enabled by Chemical–Mechanical-Polishing-Incorporated Layer Transfer Technology

MBE-grown AlGaN/GaN HEMTs with 186 mS/mm Transcond uctance