Abstract:We present the detailed dc and radio-frequency characteristics of an $\hbox{Al}_{0.3}\hbox{Ga}_{0.7}\hbox{N/GaN/In}_{0.1}\hbox{Ga}_{0.9}\hbox{N/GaN}$ double-heterojunction HEMT (DH-HEMT) structure. This structure incorporates a thin (3 nm) $\hbox{In}_{0.1}\hbox{Ga}_{0.9}\hbox{N}$ notch layer inserted at a location that is 6-nm away from the AlGaN/GaN heterointerface. The $\hbox{In}_{0.1}\hbox{Ga}_{0.9}\hbox{N}$ layer provides a unique piezoelectric polarization field which results in a higher potential barrier at the backside of the two-dimensional electron gas channel, effectively improving the carrier confinement and then reducing the buffer leakage. Both depletion-mode (D-mode) and enhancement-mode (E-mode) devices were fabricated on this new structure. Compared with the baseline AlGaN/GaN HEMTs, the DH-HEMT shows lower drain leakage current. The gate leakage current is also found to be reduced, owing to an improved surface morphology in InGaN-incorporated epitaxial structures. DC and small- and large-signal microwave characteristics, together with the linearity performances, have been investigated. The channel transit delay time analysis also revealed that there was a minor channel in the InGaN layer in which the electrons exhibited a mobility slightly lower than the GaN channel. The E-mode DH-HEMTs were also fabricated using our recently developed $\hbox{CF}_{4}$-based plasma treatment technique. The large-signal operation of the E-mode GaN-based HEMTs was reported for the first time. At 2 GHz, a $\hbox{1} \times \hbox{100}\ \mu\hbox{m}$ E-mode device demonstrated a maximum output power of 3.12 W/mm and a power-added efficiency of 49% with single-polarity biases (a gate bias of $+$0.5 V and a drain bias of 35 V). An output third-order interception point of 34.7 dBm was obtained in the E-mode HEMTs.

Lattice-matched AlInN/GaN multi-channel heterostructure and HEMTs with low on-resistance

Growth of Ingan and Double Heterojunction Structure with Ingan Back Barrier

Low contact resistance and high breakdown voltage of AlGaN/GaN HEMT grown on silicon using both AlN/GaN superlattice and Al0.07Ga0.93N back barrier layer

Studies on the InAlN/InGaN/InAlN/InGaN Double Channel Heterostructures with Low Sheet Resistance

High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures

DC and RF Characteristics of AlGaN/GaN/InGaN/GaN Double-Heterojunction HEMTs

Current collapse suppression in AlGaInN/GaN HEMTs with thin unintentionally doped GaN channel and AlN back barrier grown on single-crystal AlN substrate

AlN/GaN/InGaN Coupling-Channel HEMTs for Improved g m and Gain Linearity

High-performance high electron mobility transistors with GaN/InGaN composite channel and superlattice back barrier

AlN/GaN HEMTs with Fmax Exceeding 300 GHz by Using Ge-Doped N++gan Ohmic Contacts

Gate length scaling effect on high-electron mobility transistors devices using AlGaN/GaN and AlInN/AlN/GaN heterostructures

AlN/GaN HEMTs with f max Exceeding 300 GHz by Using Ge-Doped n ++ GaN Ohmic Contacts

Fabrication and analysis of InAlN/GaN metal–insulator–semiconductor high-electron-mobility transistors based on AlN/GaN superlattice channel

AlN/GaN/InGaN coupling-channel HEMTs with steep subthreshold swing of sub-60 mV/decade

Lattice-Matched Multiple Channel AlScN/GaN Heterostructures

High-performance InAlGaN/GaN Enhancement-Mode MOS-HEMTs Grown by Pulsed Metal Organic Chemical Vapor Deposition

Enhancement-Mode Gan Double-Channel Mos-Hemt with Low On-Resistance and Robust Gate Recess

Enhancement-Mode Operation of Nanochannel Array (NCA) AlGaN/GaN HEMTs

Suppression of Surface-Originated Gate-Lag by a Dual-Channel AlN/GaN HEMT Architecture

Improved Algan/Gan Hemts Grown on Si Substrates Using Stacked Algan/Aln Interlayer by Mocvd

High Performance InGaN Double Channel High Electron Mobility Transistors with Strong Coupling Effect Between the Channels