Abstract:In this paper, the ohmic contact mechanism and gate electrostatic control of a deep-recessed ohmic contact structure for multi-channel Al 0.3 Ga 0.7 N/GaN high electron mobility transistors (HEMTs) is investigated. A transmission electron microscope and an energy dispersive spectrum are utilized to investigate the ohmic contact interface mechanism. Due to a reduction of source/drain parasitic resistances and simultaneous connection of five channels by using deep-recessed ohmic contact, a large maximum drain current density and a distinct five hump feature of ultra-wider trans-conductance are achieved. More importantly, it is revealed that the downward expansion of the gate potential for the deep-recessed ohmic contact structure is much deeper than that for conventional devices. This characteristic leads to a remarkable reduction in subthreshold swing (SS) and off-state leakage, indicating an ultra-wide and high trans-conductance profile. The fabricated devices show a lower off-state drain leakage, a lower SS, and a wider gate voltage swing (40 V). Due to an enhancement of gate electrostatic control, the current collapse and electrical reliability characteristics of multi-channel Al 0.3 Ga 0.7 N/GaN HEMTs with deep-recessed ohmic contact also improve. The results presented here indicate that the multi-channel device has great potential for high current and wide bandwidth applications.

AlN/GaN/InGaN coupling-channel HEMTs with steep subthreshold swing of sub-60 mV/decade

AlN/GaN/InGaN Coupling-Channel HEMTs for Improved g m and Gain Linearity

AlGaN/GaN High Electron Mobility Transistors with a Low Sub-Threshold Swing on Free-Standing GaN Wafer

An energy-band modulated p-GaN/InGaN/AlN p-channel MESFET with high ION / IOFF ratio and steep subthreshold swing

Deep sub-60 mV/dec subthreshold swing independent of gate bias sweep direction in an <i>in situ</i> SiN/Al<sub>0.6</sub>Ga<sub>0.4</sub>N/GaN-on-Si metal-insulator high electron mobility transistor

Investigation of contact mechanism and gate electrostatic control in multi-channel AlGaN/GaN high electron mobility transistors with deep recessed ohmic contact

Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT

High-Efficiency AlGaN/GaN/Graded-AlGaN/GaN Double-Channel HEMTs for Sub-6G Power Amplifier Applications

High Performance InGaN Double Channel High Electron Mobility Transistors with Strong Coupling Effect Between the Channels

Current collapse suppression in AlGaInN/GaN HEMTs with thin unintentionally doped GaN channel and AlN back barrier grown on single-crystal AlN substrate

Lattice-matched AlInN/GaN multi-channel heterostructure and HEMTs with low on-resistance

Steep-slope Field-Effect Transistors with AlGaN/GaN HEMT and Oxide-Based Threshold Switching Device.

Simulation and analysis of enhancement-mode AlGaN/GaN HEMT with P-I-N junction gate

Analysis and modeling of the influence of gate leakage current on threshold voltage and subthreshold swing in p-GaN gate AlGaN/GaN high electron mobility transistors

High-Performance Normally-Off Operation p-GaN Gate HEMT on Free-Standing GaN Substrate

Threshold Voltage Stability Enhancing Technology for p-GaN HEMTs Using Hybrid Gate Structure

Multilayer SiNx passivated Al2O3 gate dielectric featuring a robust interface for ultralong-lifetime AlGaN/GaN HEMT

Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors Using a Nano-Channel Array Structure

Channel Engineering of Normally-OFF AlGaN/GaN MOS-HEMTs by Atomic Layer Etching and High- $\kappa$ Dielectric

Current-collapse Suppression and Leakage-Current Decrease in AlGaN/GaN HEMT by Sputter-Tan Gate-Dielectric Layer

Gate length scaling effect on high-electron mobility transistors devices using AlGaN/GaN and AlInN/AlN/GaN heterostructures