Abstract:In this article, the superior power performance of a double-channel high-electron-mobility transistor (HEMT) operating at a high drain voltage of sub-6 GHz was demonstrated using a heterostructure of Al0.3Ga0.7N/GaN/AlxGa1-xN/GaN, ranging from 0.3 to 0, top-down double channel with graded barrier HEMT (DCGB-HEMT). In comparison to single channel HEMT (SC-HEMT), DCGB-HEMT exhibits superior direct current (dc) characteristics, including a wider gate voltage swing, a higher saturation current (up to 1307.80 mA/mm), and a higher OFF-state breakdown voltage (up to 165 V). Through TCAD simulation, the breakdown voltage was increased because the graded barrier reduces the peak value of the electric field at the gate's edge on the drain side. Compared to SC-HEMT, DCGB-HEMT's current collapse (CC) decreased from 23.35% to 9.82%. Electrons from the upper channel are more effectively prevented from being captured by acceptors in a buffer induced by Fe-doping by a thicker 3-D electron gas (3DEG) forming between the bottom channel and graded bottom barrier, prevailing over a thinner 2-D electron gas (2DEG). DCGB-HEMT's maximum power-added efficiency (PAE) increased from 56% to 70.4%. DCGB-HEMTs exhibit superior PAE due to their improved gate control, lower leakage, and improved CC at high drain voltage.

What problem does this paper attempt to address?

This paper aims to solve the problems existing in traditional single - channel and dual - channel high - electron - mobility transistors (HEMTs) in high - power amplifier applications, especially for the sub - 6 GHz frequency band. Specifically, the paper attempts to solve the following problems: 1. **Improve output power density and efficiency**: Although traditional GaN - based HEMTs have superior material properties, there is still room for improvement in terms of high - power density and efficiency. Especially under high gate voltages, the DC (direct current) characteristics need to be further improved, including higher breakdown voltages, higher saturated drain currents, and lower current collapse (CC). 2. **Reduce current collapse (CC)**: The Fe - doped GaN buffer layer can increase the off - state breakdown voltage, but it will also introduce a memory effect, resulting in the current collapse phenomenon. This phenomenon will significantly reduce the output power density (Pout) and power - added efficiency (PAE). Therefore, how to effectively suppress current collapse is one of the key issues. 3. **Optimize the dual - channel structure**: Although traditional dual - channel HEMTs can provide greater current - driving capabilities through two channels, due to insufficient thickness and gate control, the leakage current increases, which in turn affects the breakdown characteristics and overall performance. In addition, traditional dual - channel HEMTs have poor PAE performance at high voltages and cannot fully utilize the advantage of their high saturated currents. To solve the above problems, this paper proposes a new type of dual - channel heterostructure HEMT (DCGB - HEMT), namely Al0.3Ga0.7N/GaN/AlxGa1 - xN/GaN, where x gradually decreases from 0.3 to 0. Through this structural design, the paper has achieved the following improvements: - **Higher saturated drain current**: The maximum saturated drain current of DCGB - HEMT reaches 1307.80 mA/mm. - **Higher off - state breakdown voltage**: The breakdown voltage has been increased from 106 V of single - channel HEMT to 165 V. - **Lower current collapse**: CC has been reduced from 23.35% to 9.82%. - **Higher power - added efficiency**: The maximum PAE has been increased from 56% to 70.4%. These improvements make DCGB - HEMT perform excellently in high - power and high - efficiency applications, especially having great potential in power amplifier applications in the sub - 6 GHz frequency band.

High-Efficiency AlGaN/GaN/Graded-AlGaN/GaN Double-Channel HEMTs for Sub-6G Power Amplifier Applications

Improved DC and RF Characteristics of GaN-Based Double-Channel HEMTs by Ultra-Thin AlN Back Barrier Layer

High Current and Linearity AlGaN/GaN/-Graded-AlGaN:Si-doped/GaN Heterostructure for Low Voltage Power Amplifier Application

The DC Performance and RF Characteristics of GaN-Based HEMTs Improvement Using Graded AlGaN Back Barrier and Fe/C Co-Doped Buffer

DC and RF Characteristics of AlGaN/GaN/InGaN/GaN Double-Heterojunction HEMTs

High Performance InGaN Double Channel High Electron Mobility Transistors with Strong Coupling Effect Between the Channels

Al/sub 0.3/ga/sub 0.7/n/gan Composite-Channel HEMTs with Enhanced Linearity

Al0.3Ga0.7N/Al0.05Ga0.95N/GaN Composite-Channel HEMTs with Enhanced Linearity

Boosted High-Temperature Electrical Characteristics of AlGaN/GaN HEMTs with Rationally Designed Compositionally Graded AlGaN Back Barriers

Enhancement-Mode HEMT Performance and Mitigating Delay Through Double-Heterojunction With Connect Channel Utilization for Trap Effect Reduction

1-mm gate periphery AlGaN/AlN/GaN HEMTs on SiC with output power of 9.39W at 8GHz

Improved RF power performance via electrostatic shielding effect using AlGaN/GaN/graded-AlGaN/GaN double-channel structure

Novel High-Energy-Efficiency AlGaN/GaN HEMT with High Gate and Multi-Recessed Buffer

Improvement of Power Performance of GaN HEMT by Using Quaternary InAlGaN Barrier

High-performance 2 mm gate width GaN HEMTs on 6H-SiC with output power of 22.4 W @ 8 GHz

Current collapse suppression in AlGaInN/GaN HEMTs with thin unintentionally doped GaN channel and AlN back barrier grown on single-crystal AlN substrate

AlN/GaN/InGaN Coupling-Channel HEMTs for Improved g m and Gain Linearity

High Performance Enhancement-Mode HEMT with 3DEG to Conduct Current and 3DHG As Back Barrier

Highly Linear Al/sub 0.3/ga/sub 0.7/N-Al/sub 0.05/ga/sub 0.95/N-Gan Composite-Channel HEMTs

Simulation investigation of double-heterostructure T-gate HEMT with graded back-barrier engineering for improved RF performance

Improved DC and RF performance of AlGaN/GaN HEMTs grown by MOCVD on sapphire substrates