Abstract:Reconfigurable radio‐frequency (RF) gallium nitride high‐electron mobility transistors (HEMTs) heterointegrated with a two‐dimensional ferroelectric semiconductor are demonstrated. The fabricated HEMTs exhibit the sharpest subthreshold slope with tunable threshold voltage, transconductance, and maximum frequency in the range of several GHz under a fast pulsed gate‐voltage signal. The tunability is exploited to show reconfigurable RF characteristics toward wireless communication and power transmission applications.The wireless communication and power transmission environment varies widely depending on time and place, and thus reconfigurable devices and circuits are in high demand due to the significant increase in complexity of the power stage and chip size required for current non‐reconfigurable device‐based systems. Reconfigurable radio‐frequency (RF) devices, however, are difficult to demonstrate due to the lack of suitable materials with desirable material properties that can also be integrated with conventional high‐power materials. Here, reconfigurable gallium nitride (GaN) high‐electron mobility transistors (HEMTs) that are heterointegrated with 2D van der Waals‐interfaced α‐In2Se3 semiconductor are demonstrated. The switchable ferroelectric polarization of the 2D α‐In2Se3 layer is exploited to control the 2D electron gas charge density in the GaN channel. Further, a native interfacial indium oxide layer between the gate dielectric and α‐In2Se3 functions as a charge trapping layer, boosting the effect of the ferroelectric α‐In2Se3 layer. The fabricated HEMTs exhibit the sharpest subthreshold slope with tunable threshold voltage, transconductance, and maximum frequency in the range of several GHz under the application of a fast pulsed gate‐voltage signal without sacrificing the performance. The results clearly demonstrate the immense potential of ferroelectric‐based mixed‐dimensional heterostructures as a viable pathway toward simple and compact reconfigurable RF systems.

Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT

FerroHEMTs: High-Current and High-Speed All-Epitaxial AlScN/GaN Ferroelectric Transistors

Hf$_{\text{0.5}}$Zr$_{\text{0.5}}$O$_{\text{2}}$-Based Ferroelectric Gate AlGaN/GaN HEMTs With Steep Subthreshold Swings

Demonstration of Wide Bandgap AlGaN/GaN Negative‐Capacitance High‐Electron‐Mobility Transistors (NC‐HEMTs) Using Barium Titanate Ferroelectric Gates

Ferroelectric domain modulated AlGaN/GaN field effect transistor

Comprehensive empirical modeling of ScAlN/AlGaN/GaN ferroelectric HEMT

AlGaN/GaN High Electron Mobility Transistors with a Low Sub-Threshold Swing on Free-Standing GaN Wafer

High-performance GaN metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) using Sc0.2Al0.8N/SiNX as composite gate dielectric

Reconfigurable Radio‐Frequency High‐Electron Mobility Transistors via Ferroelectric‐Based Gallium Nitride Heterostructure

Band alignment and charge carrier transport properties of YAlN/III-nitride heterostructures

AlN/GaN/InGaN coupling-channel HEMTs with steep subthreshold swing of sub-60 mV/decade

Integration of Ferroelectrics with III-N Transistors for High Performance Millimeter-Wave Applications

Multilayer SiNx passivated Al2O3 gate dielectric featuring a robust interface for ultralong-lifetime AlGaN/GaN HEMT

AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Polarized P(VDF-TrFE) Ferroelectric Polymer Gating

Releasable AlGaN/GaN 2D Electron Gas Heterostructure Membranes for Flexible Wide‐Bandgap Electronics

First Demonstration of an N-Polar InAlGaN/GaN HEMT

N-polar ScAlN and HEMTs grown by molecular beam epitaxy

Enhanced Performances of AlGaN/GaN HEMTs with Dielectric Engineering of HfZrOx

Current-collapse Suppression and Leakage-Current Decrease in AlGaN/GaN HEMT by Sputter-Tan Gate-Dielectric Layer

High-Performance Normally-Off Operation p-GaN Gate HEMT on Free-Standing GaN Substrate

Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al2O3/AlN Composite Gate Insulator