Abstract:Reconfigurable radio‐frequency (RF) gallium nitride high‐electron mobility transistors (HEMTs) heterointegrated with a two‐dimensional ferroelectric semiconductor are demonstrated. The fabricated HEMTs exhibit the sharpest subthreshold slope with tunable threshold voltage, transconductance, and maximum frequency in the range of several GHz under a fast pulsed gate‐voltage signal. The tunability is exploited to show reconfigurable RF characteristics toward wireless communication and power transmission applications.The wireless communication and power transmission environment varies widely depending on time and place, and thus reconfigurable devices and circuits are in high demand due to the significant increase in complexity of the power stage and chip size required for current non‐reconfigurable device‐based systems. Reconfigurable radio‐frequency (RF) devices, however, are difficult to demonstrate due to the lack of suitable materials with desirable material properties that can also be integrated with conventional high‐power materials. Here, reconfigurable gallium nitride (GaN) high‐electron mobility transistors (HEMTs) that are heterointegrated with 2D van der Waals‐interfaced α‐In2Se3 semiconductor are demonstrated. The switchable ferroelectric polarization of the 2D α‐In2Se3 layer is exploited to control the 2D electron gas charge density in the GaN channel. Further, a native interfacial indium oxide layer between the gate dielectric and α‐In2Se3 functions as a charge trapping layer, boosting the effect of the ferroelectric α‐In2Se3 layer. The fabricated HEMTs exhibit the sharpest subthreshold slope with tunable threshold voltage, transconductance, and maximum frequency in the range of several GHz under the application of a fast pulsed gate‐voltage signal without sacrificing the performance. The results clearly demonstrate the immense potential of ferroelectric‐based mixed‐dimensional heterostructures as a viable pathway toward simple and compact reconfigurable RF systems.

Reconfigurable Radio‐Frequency High‐Electron Mobility Transistors via Ferroelectric‐Based Gallium Nitride Heterostructure

Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT

Integration of Ferroelectrics with III-N Transistors for High Performance Millimeter-Wave Applications

Ferroelectric-Gated HfZrO2/AlGaN/GaN High-Electron-Mobility Transistors with Regrown Contacts for Radio Frequency and Millimeter-Wave Switch Applications

Reconfigurable Ferroelectric Hafnium Oxide FeFET Fabricated in 28 Nm CMOS Technology for Mmwave Applications

Ferroelectric‐Gated HfZrO2/AlGaN/GaN HEMTs with Regrown Contacts for RF and Mm‐wave Switch Applications

Microwave Performance of Ferroelectric-Gated GaN HEMTs

Ferroelectric domain modulated AlGaN/GaN field effect transistor

Reconfigurable van der Waals Heterostructured Devices with Metal–Insulator Transition

Releasable AlGaN/GaN 2D Electron Gas Heterostructure Membranes for Flexible Wide‐Bandgap Electronics

FerroHEMTs: High-Current and High-Speed All-Epitaxial AlScN/GaN Ferroelectric Transistors

Ferroelectric Gate AlGaN/GaN E-Mode HEMTs with High Transport and Sub-Threshold Performance

Energy-Efficient Reconfigurable Transistor Achieving Sub-Nanojoule Consumption Per Programming Event

Hetero-integration of Quasi Two-Dimensional PbZr0.2Ti0.8O3 on AlGaN/GaN HEMT and Non-Volatile Modulation of Two-Dimensional Electron Gas

Synergistic Effect of Ferroelectric and HfO2/SiO2 Hetero dielectrics in Junctionless FET for Analog and RF Applications

Process-dependent Reconfigurability in a Gradient Ferroelectric Field-Effect Transistor

Ferroelectric Field‐Effect‐Transistor Integrated with Ferroelectrics Heterostructure

Hf$_{\text{0.5}}$Zr$_{\text{0.5}}$O$_{\text{2}}$-Based Ferroelectric Gate AlGaN/GaN HEMTs With Steep Subthreshold Swings

Reconfigurable Dielectric Engineered WSe 2 /HZO Mem-transistor

Gate-Coupling-Enabled Robust Hysteresis for Nonvolatile Memory and Programmable Rectifier in Van Der Waals Ferroelectric Heterojunctions.

Reconfigurable SWCNT ferroelectric field-effect transistor arrays