Abstract:Large‐scale antiambipolar Van der Waals (vdWs) heterostructure arrays capable of simultaneously implementing self‐adaptive artificial perception systems and reconfigurable logic gates are verified adopting Te/WS2 heterojunctions for the first time. Similar antiambipolar electrical responses with negative differential transconductance are also observed from many other Te‐based heterostructures, defining a simple, effective, and universal method to create superior multifunctional optoelectronic antiambipolar transistors. Van der Waals (vdWs) heterostructures enable the fabrication of various optoelectronic devices with unprecedented functionalities, particularly antiambipolar transistors. Different methods have been employed to construct such devices; however, their integration and versatility remain significantly constrained. Here, large‐scale antiambipolar vdWs heterostructure arrays capable of implementing self‐adaptive artificial perception systems and reconfigurable logic gates are verified adopting 2D Te/WS2 heterojunctions for the first time. The resulting transistors allow the modulation of band slope and depletion regions in individual constituents through electrostatic gating, delivering a high rectification ratio of 1.8 × 104. Benefiting from the gate‐tunable antiambipolar characteristic and charge capture, such a device can realize reconfigurable modulation of synaptic plasticity between excitatory and inhibitory modes, enabling the emulation of artificial perception system for the adaptive and subjective perception adjustment in various external environments and also a recognition accuracy of 90.5% for image classification through training and inference simulations. In addition, five fundamental logic gate operations with good stability and reliability, as well as low energy consumption, are achieved in the dual‐gate antiambipolar transistor by tuning the input signals. Furthermore, similar antiambipolar characteristics are also observed from other 2D Te‐based heterostructures, defining a simple, effective, and universal method to create multifunctional antiambipolar transistors.

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