Abstract:Monolayer WSe2 is a two dimensional (2D) semiconductor with a direct bandgap, and it has been recently explored as a promising material for electronics and optoelectronics. Low field effect mobility is the main constraint preventing WSe2 from becoming one of the competing channel materials for field-effect transistors (FETs). Recent results have demonstrated that chemical treatments can modify the electrical properties of transition metal dichalcogenides (TMDCs) including MoS2 and WSe2. Here, we report that controlled heating in air significantly improves device performance of WSe2 FETs in terms of on-state currents and field-effect mobilities. Specifically, after heating at optimized conditions, chemical vapor deposition grown monolayer WSe2 FETs showed an average FET mobility of 31 cm2/Vs and on/off current ratios up to 5*108. For few-layer WSe2 FETs, after the same treatment applied, we achieved a high mobility up to 92 cm2/Vs. These values are significantly higher than FETs fabricated using as-grown WSe2 flakes without heating treatment, demonstrating the effectiveness of air heating on the performance improvements of WSe2 FETs. The underlying chemical processes involved during air heating and the formation of in-plane heterojunctions of WSe2 and WO3-x, which is believed to be the reason for the improved FET performance, were studied by spectroscopy and transmission electron microscopy. We further demonstrated that by combining air heating method developed in this work with supporting 2D materials on BN substrate, we achieved a noteworthy field effect mobility of 83 cm2/Vs for monolayer WSe2 FETs. This work is a step towards controlled modification of the properties of WSe2 and potentially other TMDCs, and may greatly improve device performance for future applications of 2D materials in electronics and optoelectronics.

High Mobility Transistors and Flexible Optical Synapses Enabled by Wafer-Scale Chemical Transformation of Pt-Based 2D Layers

High Mobility 2D Palladium Diselenide Field-Effect Transistors with Tunable Ambipolar Characteristics.

Reversible Transition of Semiconducting PtSe2 and Metallic PtTe2 for Scalable All-2D Edge-Contacted FETs

High-Fidelity Transfer of 2D Semiconductors and Electrodes for Van Der Waals Devices

High-Performance Flexible Nanoscale Field-Effect Transistors Based on Transition Metal Dichalcogenides

Scaling-up Atomically Thin Coplanar Semiconductor-Metal Circuitry via Phase Engineered Chemical Assembly

High-Performance Wafer-Scale MoS2 Transistors Toward Practical Application

Fabrication of p-type 2D single-crystalline transistor arrays with Fermi-level-tuned van der Waals semimetal electrodes

Reconfigurable van der Waals Heterostructured Devices with Metal–Insulator Transition

Wafer-Scale Anion Exchange Conversion of Nonlayered PtS Films to van der Waals Two-Dimensional PtTe 2 Layers with Negative Photoresponsiveness

Large-Scale Vertical 1T′/2H MoTe2 Nanosheet-Based Heterostructures for Low Contact Resistance Transistors

Transistors with Chemically Synthesized Layered Semiconductor WS2 Exhibiting 105 Room Temperature Modulation and Ambipolar Behavior

High Performance WSe2 Field-Effect Transistors via Controlled Formation of In-Plane Heterojunctions

Programmable transition metal dichalcogenide homojunctions controlled by nonvolatile ferroelectric domains

Chemical Synthesis and Integration of Highly Conductive PdTe2 with Low‐Dimensional Semiconductors for P‐type Transistors with Low Contact Barriers

Novel High-Mobility Field-Effect Transistors Based on Transition Metal Dichalcogenides

Hybrid single-layer/bulk tungsten diselenide transistors by lithographic encoding of material thickness in chemical vapor deposition

P-type electrical contacts for two-dimensional transition metal dichalcogenides

Low-defect-density WS 2 by Hydroxide Vapor Phase Deposition

Intergranular Diffusion‐Assisted Liquid‐Phase Chemical Vapor Deposition for Wafer‐Scale Synthesis of Patternable 2D Semiconductors

Scalable, Highly Crystalline, 2D Semiconductor Atomic Layer Deposition Process for High Performance Electronic Applications