Abstract:Palladium diselenide (PdSe2), as an emerging two-dimensional (2D) layered material, is gaining growing attention in nanoelectronics and optoelectronics due to its thickness-dependent band gap, high carrier mobility, and good air stability. However, its asymmetric pentagon structure is inclined to breed defects. Herein, the intrinsic Se vacancy-induced trap states and their influence on the hopping transport in PdSe2 are systematically investigated. We provide direct evidence that Se vacancies exist in the fresh PdSe2 samples, which results in the localized trapping states inside the band gap. For the few-layer PdSe2, at 77 K, the trap density (Dit) near the midgap is about 2.2 × 1013 cm-2 eV-1, whereas at 295 K, the Dit value increases to ∼7.1 × 1013 cm-2 eV-1. By comparison, the multilayer PdSe2 shows nonobvious temperature-dependent trap behaviors with almost unchanged Dit values of ∼8.1 × 1012 cm-2 eV-1 at midgap in the temperature range between 77 and 295 K. Thus, trap states in the few-layer PdSe2 are more vulnerable to temperature effect. Transport measurements demonstrated that both few-layer and multilayer PdSe2 field-effect transistor (FET) devices show n-type dominant ambipolar behaviors. The electron mobility in the multilayer PdSe2 FET is nearly 15-fold higher than that in the few-layer PdSe2 FET at 315 K, probably owing to the decreased effective mass and suppression of charge impurity scattering in the thicker channel material. However, both FET devices exhibit variable-range hopping over a temperature range from 77 to 240 K and thermally activated hopping at temperatures above 240 K. The hopping transport mechanism is strongly associated with the Se vacancy-induced localized states with poor screening and strong potential fluctuations. This study reveals the important role of structural defects in tailoring and improving the charge transport properties of PdSe2.

High Mobility 2D Palladium Diselenide Field-Effect Transistors with Tunable Ambipolar Characteristics.

Applications of 2D-Layered Palladium Diselenide and Its van der Waals Heterostructures in Electronics and Optoelectronics

2D Materials: Two‐Dimensional Palladium Diselenide with Strong In‐Plane Optical Anisotropy and High Mobility Grown by Chemical Vapor Deposition (adv. Mater. 19/2020)

Two‐Dimensional Palladium Diselenide with Strong In‐Plane Optical Anisotropy and High Mobility Grown by Chemical Vapor Deposition

Field‐Effect Transistors: Low‐Symmetry PdSe 2 for High Performance Thermoelectric Applications (Adv. Funct. Mater. 52/2020)

Achieving Ultrahigh Electron Mobility in PdSe2 Field‐Effect Transistors via Semimetal Antimony as Contacts

Control of Carrier Polarity and Schottky Barriers in Layered PdSe2 Field-Effect Transistors

P-N Conversion of Charge Carrier Types and High Photoresponsive Performance of Composition Modulated Ternary Alloy W(SxSe1-x)2 Field-Effect Transistors.

PdSe2/MoSe2: A promising van der waals heterostructure for field effect transistor application

Low‐Symmetry PdSe2 for High Performance Thermoelectric Applications

Controlled Synthesis of 2D Palladium Diselenide for Sensitive Photodetector Applications

Multi-Layer Palladium Diselenide as a Contact Material for Two-Dimensional Tungsten Diselenide Field-Effect Transistors

Quantum octets in high mobility pentagonal two-dimensional PdSe 2

Probing Intrinsic Defect-Induced Trap States and Hopping Transport in Two-Dimensional PdSe2 Semiconductor Devices

Homogeneous Palladium Diselenide pn‐Junction Diodes for Reconfigurable Circuit Applications

Large‐area High Quality PtSe2 Thin Film with Versatile Polarity

Lateral 2D WSe2 p-n Homojunction Formed by Efficient Charge-Carrier-Type Modulation for High-Performance Optoelectronics

PdPSe: Component‐Fusion‐Based Topology Designer of Two‐Dimensional Semiconductor

Tunable Electron Transport in Defect-Engineered PdSe$_\mathrm{2}$

Low‐Symmetry PdSe 2 for High Performance Thermoelectric Applications

PdSe2: Pentagonal Two-Dimensional Layers with High Air Stability for Electronics