Popcorn primary colonic phytobezoar.

R. Roberge,N. S. Squyres,T. Macmath

DOI: https://doi.org/10.1016/S0196-0644(88)80510-9

IF: 6.762

Annals of Emergency Medicine

Abstract:

What problem does this paper attempt to address?

High Mobility 2D Palladium Diselenide Field-Effect Transistors with Tunable Ambipolar Characteristics.

Wai Leong Chow,Peng Yu,Fucai Liu,Jinhua Hong,Xingli Wang,Qingsheng Zeng,Chuang-Han Hsu,Chao Zhu,Jiadong Zhou,Xiaowei Wang,Juan Xia,Jiaxu Yan,Yu Chen,Di Wu,Ting Yu,Zexiang Shen,Hsin Lin,Chuanhong Jin,Beng Kang Tay,Zheng Liu

DOI: https://doi.org/10.1002/adma.201602969

IF: 29.4

2017-01-01

Advanced Materials

Abstract:Due to the intriguing optical and electronic properties, 2D materials have attracted a lot of interest for the electronic and optoelectronic applications. Identifying new promising 2D materials will be rewarding toward the development of next generation 2D electronics. Here, palladium diselenide (PdSe2), a noble-transition metal dichalcogenide (TMDC), is introduced as a promising high mobility 2D material into the fast growing 2D community. Field-effect transistors (FETs) based on ultrathin PdSe2 show intrinsic ambipolar characteristic. The polarity of the FET can be tuned. After vacuum annealing, the authors find PdSe2 to exhibit electron-dominated transport with high mobility (mu(e(max)) = 216 cm(2) V-1 s(-1)) and on/off ratio up to 10(3). Hole-dominated-transport PdSe2 can be obtained by molecular doping using F-4-TCNQ. This pioneer work on PdSe2 will spark interests in the less explored regime of noble-TMDCs.
High Mobility Transistors and Flexible Optical Synapses Enabled by Wafer-Scale Chemical Transformation of Pt-Based 2D Layers

Sang Sub Han,June-Chul Shin,Alireza Ghanipour,Ji-Hyun Lee,Sang-Gil Lee,Jung Han Kim,Hee-Suk Chung,Gwan-Hyoung Lee,Yeonwoong Jung

DOI: https://doi.org/10.1021/acsami.4c06540

2024-07-17

Abstract:Electronic devices employing two-dimensional (2D) van der Waals (vdW) transition-metal dichalcogenide (TMD) layers as semiconducting channels often exhibit limited performance (e.g., low carrier mobility), in part, due to their high contact resistances caused by interfacing non-vdW three-dimensional (3D) metal electrodes. Herein, we report that this intrinsic contact issue can be efficiently mitigated by forming the 2D/2D in-plane junctions of 2D semiconductor channels seamlessly interfaced with 2D metal electrodes. For this, we demonstrated the selectively patterned conversion of semiconducting 2D PtSe2 (channels) to metallic 2D PtTe2 (electrodes) layers by employing a wafer-scale low-temperature chemical vapor deposition (CVD) process. We investigated a variety of field-effect transistors (FETs) employing wafer-scale CVD-2D PtSe2/2D PtTe2 heterolayers and identified that silicon dioxide (SiO2) top-gated FETs exhibited an extremely high hole mobility of ∼120 cm2 V-1 s-1 at room temperature, significantly surpassing performances with previous wafer-scale 2D PtSe2-based FETs. The low-temperature nature of the CVD method further allowed for the direct fabrication of wafer-scale arrays of 2D PtSe2/2D PtTe2 heterolayers on polyamide (PI) substrates, which intrinsically displayed optical pulse-induced artificial synaptic behaviors. This study is believed to vastly broaden the applicability of 2D TMD layers for next-generation, high-performance electronic devices with unconventional functionalities.
Chemical Synthesis and Integration of Highly Conductive PdTe2 with Low‐Dimensional Semiconductors for P‐type Transistors with Low Contact Barriers

Jingying Zheng,Tingting Miao,Rui Xu,Xiaofan Ping,Yueyang Wu,Zhixing Lu,Ziming Zhang,Dake Hu,Lina Liu,Qi Zhang,Dawei Li,Zhihai Cheng,Weigang Ma,Liming Xie,Liying Jiao

DOI: https://doi.org/10.1002/adma.202101150

IF: 29.4

2021-01-01

Advanced Materials

Abstract:Low‐dimensional semiconductors provide promising ultrathin channels for constructing more‐than‐Moore devices. However, the prominent contact barriers at the semiconductor–metal electrodes interfaces greatly limit the performance of the obtained devices. Here, a chemical approach is developed for the construction of p‐type field‐effect transistors (FETs) with low contact barriers by achieving the simultaneous synthesis and integration of 2D PdTe2 with various low‐dimensional semiconductors. The 2D PdTe2 synthesized through a quasi‐liquid process exhibits high electrical conductivity (≈4.3 × 106 S m−1) and thermal conductivity (≈130 W m−1 K−1), superior to other transition metal dichalcogenides (TMDCs) and even higher than some metals. In addition, PdTe2 electrodes with desired geometry can be synthesized directly on 2D MoTe2 and other semiconductors to form high‐performance p‐type FETs without any further treatment. The chemically derived atomically ordered PdTe2–MoTe2 interface results in significantly reduced contact barrier (65 vs 240 meV) and thus increases the performance of the obtained devices. This work demonstrates the great potential of 2D PdTe2 as contact materials and also opens up a new avenue for the future device fabrication through the chemical construction and integration of 2D components.
Improvement of electrical performance using PtSe2/PtTe2 edge contact synthesized by molecular beam epitaxy

Hyeon-Sik Kim,Jaehun Jeong,Gi-Hyeon Kwon,Hoedon Kwon,Min Baik,Mann-Ho Cho

DOI: https://doi.org/10.1016/j.apsusc.2022.152507

IF: 6.7

2022-05-01

Applied Surface Science

Abstract:One-dimensional (1D) edge contact is considered critical to reducing contact resistance between two-dimensional transition-metal dichalcogenides (TMDs) and contact metal and overcoming surface contact effects, such as surface damage and orbital hybridization. Although several studies have investigated edge contact, some problems such as inevitable etching damage and a limited area persist. Herein, a tellurization method is applied to a specific lateral region to fabricate PtTe2/PtSe2/PtTe2 edge-contact field-effect transistors (FETs) without etching damage. High-resolution X-ray photoelectron spectroscopy and Raman spectroscopy are used to verify tellurization completion, which is evidenced by the complete transformation of PtSe2 to PtTe2 by the substitution of Se atoms with evaporated Te atoms. Furthermore, tellurization is applied to a specific lateral region by utilizing the hexagonal boron nitride to block the interdiffusion of evaporated Te atoms, which is confirmed by Raman spectroscopy and cross-sectional annular dark-field scanning transmission electron microscopy. Finally, the 1D edge-contact FETs fabricated by tellurization demonstrate a higher on–off ratio and carrier mobility than the surface-contact FET. Therefore, this method can be applied to various FETs based on TMDs for improving electrical performance through a reduction in contact resistance.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
High-Performance Flexible Nanoscale Field-Effect Transistors Based on Transition Metal Dichalcogenides

Alwin Daus,Sam Vaziri,Victoria Chen,Cagil Koroglu,Ryan W. Grady,Connor S. Bailey,Hye Ryoung Lee,Kevin Brenner,Kirstin Schauble,Eric Pop

DOI: https://doi.org/10.1038/s41928-021-00598-6

2021-02-06

Abstract:Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) are good candidates for high-performance flexible electronics. However, most demonstrations of such flexible field-effect transistors (FETs) to date have been on the micron scale, not benefitting from the short-channel advantages of 2D-TMDs. Here, we demonstrate flexible monolayer MoS2 FETs with the shortest channels reported to date (down to 50 nm) and remarkably high on-current (up to 470 uA/um at 1 V drain-to-source voltage) which is comparable to flexible graphene or crystalline silicon FETs. This is achieved using a new transfer method wherein contacts are initially patterned on the rigid TMD growth substrate with nanoscale lithography, then coated with a polyimide (PI) film which becomes the flexible substrate after release, with the contacts and TMD. We also apply this transfer process to other TMDs, reporting the first flexible FETs with MoSe2 and record on-current for flexible WSe2 FETs. These achievements push 2D semiconductors closer to a technology for low-power and high-performance flexible electronics.

Materials Science,Applied Physics
Chemical Synthesis and Integration of Highly Conductive PdTe 2 with Low‐Dimensional Semiconductors for p‐Type Transistors with Low Contact Barriers

Jingying Zheng,Tingting Miao,Rui Xu,Xiaofan Ping,Yueyang Wu,Zhixing Lu,Ziming Zhang,Dake Hu,Lina Liu,Qi Zhang,Dawei Li,Zhihai Cheng,Weigang Ma,Liming Xie,Liying Jiao

DOI: https://doi.org/10.1002/adma.202101150

IF: 29.4

2021-05-31

Advanced Materials

Abstract:Low-dimensional semiconductors provide promising ultrathin channels for constructing more-than-Moore devices. However, the prominent contact barriers at the semiconductor–metal electrodes interfaces greatly limit the performance of the obtained devices. Here, a chemical approach is developed for the construction of p-type field-effect transistors (FETs) with low contact barriers by achieving the simultaneous synthesis and integration of 2D PdTe2 with various low-dimensional semiconductors. The 2D PdTe2 synthesized through a quasi-liquid process exhibits high electrical conductivity (≈4.3 × 106 S m−1) and thermal conductivity (≈130 W m−1 K−1), superior to other transition metal dichalcogenides (TMDCs) and even higher than some metals. In addition, PdTe2 electrodes with desired geometry can be synthesized directly on 2D MoTe2 and other semiconductors to form high-performance p-type FETs without any further treatment. The chemically derived atomically ordered PdTe2–MoTe2 interface results in significantly reduced contact barrier (65 vs 240 meV) and thus increases the performance of the obtained devices. This work demonstrates the great potential of 2D PdTe2 as contact materials and also opens up a new avenue for the future device fabrication through the chemical construction and integration of 2D components.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Innovations of metallic contacts on semiconducting 2D transition metal dichalcogenides toward advanced 3D-structured field-effect transistors

Byeongchan Kim,Seojoo Lee,Jin-Hong Park

DOI: https://doi.org/10.1039/d4nh00030g

2024-08-19

Abstract:2D semiconductors, represented by transition metal dichalcogenides (TMDs), have the potential to be alternative channel materials for advanced 3D field-effect transistors, such as gate-all-around field-effect-transistors (GAAFETs) and complementary field-effect-transistors (C-FETs), due to their inherent atomic thinness, moderate mobility, and short scaling lengths. However, 2D semiconductors encounter several technological challenges, especially the high contact resistance issue between 2D semiconductors and metals. This review provides a comprehensive overview of the high contact resistance issue in 2D semiconductors, including its physical background and the efforts to address it, with respect to their applicability to GAAFET structures.
Scaling-up Atomically Thin Coplanar Semiconductor-Metal Circuitry via Phase Engineered Chemical Assembly

Xiaolong Xu,Shuai Liu,Bo Han,Yimo Han,Kai Yuan,Wanjin Xu,Xiaohan Yao,Pan Li,Shiqi Yang,Wenting Gong,David A Muller,Peng Gao,Yu Ye,Lun Dai

DOI: https://doi.org/10.1021/acs.nanolett.9b02006

2019-10-09

Abstract:Two-dimensional (2D) layered semiconductors, with their ultimate atomic thickness, have shown promise to scale down transistors for modern integrated circuitry. However, the electrical contacts that connect these materials with external bulky metals are usually unsatisfactory, which limits the transistor performance. Recently, contacting 2D semiconductors using coplanar 2D conductors has shown promise in reducing the problematic high contact resistance. However, many of these methods are not ideal for scaled production. Here, we report on the large-scale, spatially controlled chemical assembly of the integrated 2H-MoTe2 field-effect transistors (FETs) with coplanar metallic 1T'-MoTe2 contacts via phase engineered approaches. We demonstrate that the heterophase FETs exhibit ohmic contact behavior with low contact resistance, resulting from the coplanar seamless contact between 2H and 1T'-MoTe2 confirmed by transmission electron microscopy characterizations. The average mobility of the heterophase FETs was measured to be as high as 23 cm2 V-1 s-1 (comparable with those of exfoliated single crystals), due to the large 2H-MoTe2 single-crystalline domain size (486 ± 187 μm). By developing a patterned growth method, we realize the 1T'-MoTe2 gated heterophase FET array whose components of the channel, gate, and contacts are all 2D materials. Finally, we transfer the heterophase device array onto a flexible substrate and demonstrate the near-infrared photoresponse with high photoresponsivity (∼1.02 A/W). Our study provides a basis for the large-scale application of phase-engineered coplanar MoTe2 semiconductor-metal structure in advanced electronics and optoelectronics.
Achieving Ultrahigh Electron Mobility in PdSe2 Field‐Effect Transistors via Semimetal Antimony as Contacts

Zhenping Wang,Nasir Ali,Tien Dat Ngo,Hoseong Shin,Sungwon Lee,Won Jong Yoo

DOI: https://doi.org/10.1002/adfm.202301651

IF: 19

2023-04-16

Advanced Functional Materials

Abstract:The formation of clean and defect‐free van der Waals stackings at the Sb–PdSe2 heterointerfaces boosts the transport characteristics of few‐layer PdSe2 field‐effect transistors, including low contact resistance down to 0.55 kΩ μm, high on‐current density reaching 96 μA μm−1, and high electron mobility of 383 cm2 V−1 s−1 at room temperature and 2,184 cm2 V−1 s−1 at 10 K. Even though atomically thin 2D semiconductors have shown great potential for next‐generation electronics, the low carrier mobility caused by poor metal–semiconductor contacts and the inherently high density of impurity scatterings remains a critical issue. Herein, high‐mobility field‐effect transistors (FETs) by introducing few‐layer PdSe2 flakes as channels is achieved, via directly depositing semimetal antimony (Sb) as drain–source electrodes. The formation of clean and defect‐free van der Waals (vdW) stackings at the Sb–PdSe2 heterointerfaces boosts the room temperature transport characteristics, including low contact resistance down to 0.55 kΩ μm, high on‐current density reaching 96 μA μm−1, and high electron mobility of 383 cm2 V−1 s−1. Furthermore, metal–insulator transition (MIT) is observed in the PdSe2 FETs with and without hexagonal boron nitride (h–BN) as buffer layers. However, the layered h–BN/PdSe2 vdW stacking eliminates the interference of interfacial disorders, and thus the corresponding device exhibits a lower MIT crossing point, larger mobility exponent of γ ∼ 1.73, significantly decreased hopping parameter of T0, and ultrahigh electron mobility of 2,184 cm2 V−1 s−1 at 10 K. These findings are expected to be significant for developing high mobility 2D‐based quantum devices.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Two-Dimensional Silicon Atomic Layer Field-Effect Transistors: Electronic Property, Metal-Semiconductor Contact, and Device Performance

Pengpeng Sang,Qianwen Wang,Wei Wei,Lu Tai,Xuepeng Zhan,Yuan Li,Jiezhi Chen

DOI: https://doi.org/10.1109/ted.2021.3138362

IF: 3.1

2022-04-01

IEEE Transactions on Electron Devices

Abstract:To provide fully CMOS-compatible 2-D materials, novel silicon atomic-layer-based field-effect transistors (FETs) are investigated thoroughly in this work, with a focus on three 2-D silicon semiconductors hybrid honeycomb-kagome silicene (hhk-Si), large honeycomb dumbbell silicene (LHD-Si), and honeycomb dumbbell silicene (HD-Si). Based on first-principles and ballistic quantum transport simulations (QSTs), we unveil the intrinsic transport properties of the proposed 2-D silicon semiconductors, and benchmark with bulk-silicon and monolayer MoS2. More importantly, we gain an in-depth insight into electrode contact issues and device performance of LHD-Si-based Schottky-barrier (SB) FETs with different metal electrodes. Both the monolayer hhk-Si and LHD-Si exhibit excellent intrinsic transport properties, and a large ON/OFF ratio (${I} _{ ext{on}} / {I} _{ ext{off}}$ ) over 105 (${I} _{ ext{on}}$ approaching 103 $mu ext{A} / mu ext{m}$ ) can be achieved in the hhk-Si MOSFET. Moreover, with proper metal electrodes, the LHD-Si SB-FET can realize SB-free injection (Ohmic contact) and sub-thermal switching (cold-source). The LHD-Si SB-FET achieves a large ${I} _{ ext{on}}$ of 545–$660 mu ext{A} / mu ext{m}$ for Bi and Al electrodes, and a steep subthreshold swing of 48–51 mV/dec for NbTe2 and TaTe2 electrodes. This work demonstrates the promising application of 2-D silicon semiconductors in ultra-scaled FETs and the potential contact issues of metal electrodes.

engineering, electrical & electronic,physics, applied
High-Performance Contact-Doped WSe2 Transistors Using TaSe2 Electrodes.

Bingjie Liu,Xiaofei Yue,Chenxu Sheng,Jiajun Chen,Chengjie Tang,Yabing Shan,Jinkun Han,Shuwen Shen,Wenxuan Wu,Lijia Li,Ye Lu,Laigui Hu,Ran Liu,Zhi-Jun Qiu,Chunxiao Cong

DOI: https://doi.org/10.1021/acsami.4c01605

IF: 9.5

2024-01-01

ACS Applied Materials & Interfaces

Abstract:Two-dimensional (2D) transitional metal dichalcogenides (TMDs) have garnered significant attention due to their potential for next-generation electronics, which require device scaling. However, the performance of TMD-based field-effect transistors (FETs) is greatly limited by the contact resistance. This study develops an effective strategy to optimize the contact resistance of WSe2 FETs by combining contact doping and 2D metallic electrode materials. The contact regions were doped using a laser, and the metallic TaSe2 flakes were stacked on doped WSe2 as electrodes. Doping the contact areas decreases the depletion width, while introducing the TaSe2 contact results in a lower Schottky barrier. This method significantly improves the electrical performance of the WSe2 FETs. The doped WSe2/TaSe2 contact exhibits an ultralow Schottky barrier height of 65 meV and a contact resistance of 11 kΩ·μm, which is a 50-fold reduction compared to the conventional Cr/Au contact. Our method offers a way on fabricating high-performance 2D FETs.
High-Fidelity Transfer of 2D Semiconductors and Electrodes for Van Der Waals Devices

Lingxiao Yu,Minglang Gao,Qian Lv,Hanyuan Ma,Jingzhi Shang,Zheng-Hong Huang,Zheng Sun,Ting Yu,Feiyu Kang,Ruitao Lv

DOI: https://doi.org/10.1021/acsnano.4c10551

IF: 17.1

2024-01-01

ACS Nano

Abstract:As traditional silicon-based materials almost reach their limits in the post-Moore era, two-dimensional (2D) transition metal dichalcogenides (TMDCs) have been regarded as next-generation semiconductors for high-performance electrical and optical devices. Chemical vapor deposition (CVD) is a widely used technique for preparing large-area and high-quality TMDCs. Yet, it suffers from the challenge of transfer due to the strong interaction between 2D materials and substrates. The traditional PMMA-assisted wet etching method tends to induce damage, wrinkles, and inevitable polymer residues. In this work, we propose an etch-free and clean transfer method via a water intercalation strategy for TMDCs, ensuring a high-fidelity, wrinkle-free, and crack-free transfer with negligible residues. Furthermore, metal electrodes can also be transferred via this method and back-gate field-effect transistors (FETs) based on CVD-grown monolayer WSe2 with van der Waals (vdW) metal/semiconductor contacts are fabricated. Compared to the PMMA-assisted transfer method (∼1.2 cm2 V-1 s-1 hole mobility with ∼2 × 106 ON/OFF ratio), our high-fidelity transfer method significantly enhances the electrical performance of WSe2 FET over one order of magnitude, achieving a hole mobility of ∼43 cm2 V-1 s-1 and a high ON/OFF ratio of ∼5 × 107 in air at room temperature.
Improvements in 2D p-type WSe2 transistors towards ultimate CMOS scaling

Naim Hossain Patoary,Jing Xie,Guantong Zhou,Fahad Al Mamun,Mohammed Sayyad,Sefaattin Tongay,Ivan Sanchez Esqueda

DOI: https://doi.org/10.1038/s41598-023-30317-4

IF: 4.6

2023-03-01

Scientific Reports

Abstract:This paper provides comprehensive experimental analysis relating to improvements in the two-dimensional (2D) p-type metal–oxide–semiconductor (PMOS) field effect transistors (FETs) by pure van der Waals (vdW) contacts on few-layer tungsten diselenide (WSe 2 ) with high-k metal gate (HKMG) stacks. Our analysis shows that standard metallization techniques (e.g., e-beam evaporation at moderate pressure ~ 10 –5 torr) results in significant Fermi-level pinning, but Schottky barrier heights (SBH) remain small (< 100 meV) when using high work function metals (e.g., Pt or Pd). Temperature-dependent analysis uncovers a more dominant contribution to contact resistance from the channel access region and confirms significant improvement through less damaging metallization techniques (i.e., reduced scattering) combined with strongly scaled HKMG stacks (enhanced carrier density). A clean contact/channel interface is achieved through high-vacuum evaporation and temperature-controlled stepped deposition providing large improvements in contact resistance. Our study reports low contact resistance of 5.7 kΩ-μm, with on-state currents of ~ 97 μA/μm and subthreshold swing of ~ 140 mV/dec in FETs with channel lengths of 400 nm. Furthermore, theoretical analysis using a Landauer transport ballistic model for WSe 2 SB-FETs elucidates the prospects of nanoscale 2D PMOS FETs indicating high-performance (excellent on-state current vs subthreshold swing benchmarks) towards the ultimate CMOS scaling limit.

multidisciplinary sciences
P-type electrical contacts for two-dimensional transition metal dichalcogenides

Yan Wang,Jong Chan Kim,Yang Li,Kyung Yeol Ma,Seokmo Hong,Minsu Kim,Hyeon Suk Shin,Hu Young Jeong,Manish Chhowalla

DOI: https://doi.org/10.1038/s41586-022-05134-w

IF: 64.8

2022-08-02

Nature

Abstract:Digital logic circuits are based on complementary pairs of n- and p-type field effect transistors (FETs) via complementary metal oxide semiconductor (CMOS) technology. In three dimensional (3D or bulk) semiconductors, substitutional doping of acceptor or donor impurities is used to achieve p- and n-type FETs. However, the controllable p-type doping of low-dimensional semiconductors such as two-dimensional transition metal dichalcogenides (2D TMDs) has proved to be challenging. Although it is possible to achieve high quality, low resistance n-type van der Waals (vdW) contacts on 2D TMDs 1–5 , obtaining p-type devices from evaporating high work function metals onto 2D TMDs has not been realised so far. Here we report high-performance p-type devices on single and few-layered molybdenum disulphide (MoS 2 ) and tungsten diselenide (WSe 2 ) based on industry-compatible electron beam evaporation of high work function metals such as Pd and Pt. Using atomic resolution imaging and spectroscopy, we demonstrate near ideal vdW interfaces without chemical interactions between the 2D TMDs and 3D metals. Electronic transport measurements reveal that the Fermi level is unpinned and p-type FETs based on vdW contacts exhibit low contact resistance of 3.3 kΩ·μm, high mobility values of ~ 190 cm 2 -V -1 s -1 at room temperature with saturation currents in excess of > 10 -5 Amperes per micron (A-μm -1 ) and on/off ratio of 10 7 . We also demonstrate an ultra-thin photovoltaic cell based on n- and p-type vdW contacts with an open circuit voltage of 0.6 V and power conversion efficiency of 0.82%.

multidisciplinary sciences
Electrochemical Construction of Edge‐Contacted Metal‐Semiconductor Junctions with Low Contact Barrier

Xiaofan Ping,Weigang Liu,Yueyang Wu,Guanchen Xu,Fengen Chen,Guangtao Li,Liying Jiao

DOI: https://doi.org/10.1002/adma.202202484

IF: 29.4

2022-01-01

Advanced Materials

Abstract:2D semiconductors, such as MoS2 have emerged as promising ultrathin channel materials for the further scaling of field-effect transistors (FETs). However, the contact barrier at the metal-2D semiconductor junctions still significantly limits the device's performance. By extending the application of electrochemical deposition in 2D electronics, a distinct approach is developed for constructing metal-2D semiconductor junctions in an edge-contacted configuration through the edge-guided electrodeposition of varied metals. Both high-resolution microscopic imaging and electrical transport measurements confirm the successful creation of high-quality Pd-2D MoS2 junctions in desired geometry by combining electrodeposition with lithographic patterning. FETs are fabricated on the obtained Pd-2D MoS2 junctions and it is confirmed that these junctions exhibit a reduced contact barrier of approximate to 20 meV and extremely low contact resistance of 290 omega mu m and thus increase the averaged mobility of MoS2 FETs to approximate to 108 cm(2) V (-1) s(-1). This approach paves a new way for the construction of metal-semiconductor junctions and also demonstrates the great potential of the electrochemical deposition technique in 2D electronics.
Unipolar P-Type Monolayer WSe2 Field-Effect Transistors with High Current Density and Low Contact Resistance Enabled by Van Der Waals Contacts

Miaomiao Li,Xinyu Zhang,Zimei Zhang,Gang Peng,Zhihong Zhu,Jia Li,Shiqiao Qin,Mengjian Zhu

DOI: https://doi.org/10.1007/s12274-024-6942-5

IF: 9.9

2024-01-01

Nano Research

Abstract:High-performance field-effect transistors (FETs) based on atomically thin two-dimensional (2D) semiconductors have demonstrated great promise in post-Moore integrated circuits. However, unipolar p-type 2D semiconductor transistors yet remain challenging and suffer from low saturation current density (less than 10 µA·µm−1) and high contact resistance (larger than 100 kΩ·µm), mainly limited by the Schottky barrier induced by the mismatch of the work-functions and the Fermi level pinning at the metal contact interfaces. Here, we overcome these two obstacles through van der Waals (vdW) integration of high work-function metal palladium (Pd) as the contacts onto monolayer WSe2 grown by chemical vapor deposition (CVD) method. We demonstrate unipolar p-type monolayer WSe2 FETs with superior device performance: room temperature on-state current density exceeding 100 µA·µm−1, contact resistance of 12 kΩ·µm, on/off ratio over 107, and field-effect hole mobility of 103 cm2·V−1·s−1. Electrical transport measurements reveal that the Fermi level pinning effect is completely effectively eliminated in monolayer WSe2 with vdW Pd contacts, leading to a Schottky barrier-free Ohmic contact at the metal-semiconductor junctions. Combining the advantages of large-scale vdW contact strategy and CVD growth, our results pave the way for wafer-scale fabrication of complementary-metal-oxide-semiconductor (CMOS) logic circuits based on atomically thin 2D semiconductors.
A perspective on the doping of transition metal dichalcogenides for ultra-scaled transistors: Challenges and opportunities

Rehan Younas,Guanyu Zhou,Christopher L. Hinkle

DOI: https://doi.org/10.1063/5.0133064

IF: 4

2023-04-17

Applied Physics Letters

Abstract:To support the ever-growing demand for faster, energy-efficient computation, more aggressive scaling of the transistor is required. Two-dimensional (2D) transition metal dichalcogenides (TMDs), with their ultra-thin body, excellent electrostatic gate control, and absence of surface dangling bonds, allow for extreme scaling of the channel region without compromising the mobility. New device geometries, such as stacked nanosheets with multiple parallel channels for carrier flow, can facilitate higher drive currents to enable ultra-fast switches, and TMDs are an ideal candidate for that type of next generation front-end-of-line field effect transistor (FET). TMDs are also promising for monolithic 3D (M3D) integrated back-end-of-line FETs due to their ability to be grown at low temperature and with less regard to lattice matching through van der Waals (vdW) epitaxy. To achieve TMD FETs with superior performance, two important challenges must be addressed: (1) complementary n- and p-type FETs with small and reliable threshold voltages are required for the reduction of dynamic and static power consumption per logic operation, and (2) contact resistance must be reduced significantly. We present here the underlying strengths and weaknesses of the wide variety of methods under investigation to provide scalable, stable, and controllable doping. It is our Perspective that of all the available doping methods, substitutional doping offers the ultimate solution for TMD-based transistors.

physics, applied
Toward High-Performance p-Type Two-Dimensional Field Effect Transistors: Contact Engineering, Scaling, and Doping

Aaryan Oberoi,Ying Han,Sergei P. Stepanoff,Andrew Pannone,Yongwen Sun,Yu-Chuan Lin,Chen Chen,Jeffrey R. Shallenberger,Da Zhou,Mauricio Terrones,Joan M. Redwing,Joshua A. Robinson,Douglas E. Wolfe,Yang Yang,Saptarshi Das

DOI: https://doi.org/10.1021/acsnano.3c03060

IF: 17.1

2023-10-11

ACS Nano

Abstract:n-type field effect transistors (FETs) based on two-dimensional (2D) transition-metal dichalcogenides (TMDs) such as MoS(2) and WS(2) have come close to meeting the requirements set forth in the International Roadmap for Devices and Systems (IRDS). However, p-type 2D FETs are dramatically lagging behind in meeting performance standards. Here, we adopt a three-pronged approach that includes contact engineering, channel length (L(ch)) scaling, and monolayer doping to achieve high performance...

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
Wafer-Scale Anion Exchange Conversion of Nonlayered PtS Films to van der Waals Two-Dimensional PtTe 2 Layers with Negative Photoresponsiveness

Sang Sub Han,Mashiyat Sumaiya Shawkat,Yoong Hee Lee,Gyehyun Park,Hao Li,Hee-Suk Chung,Changhyeon Yoo,Sohrab Alex Mofid,Shahid Sattar,Nitin Choudhary,Jea-Young Choi,YounJoon Jung,Jung Han Kim,Yeonwoong Jung

DOI: https://doi.org/10.1021/acs.chemmater.2c01452

IF: 10.508

2022-07-20

Chemistry of Materials

Abstract:This study reports on the controlled vapor-phase anion exchange conversion of three-dimensional (3D) platinum(II) sulfide (PtS) thin films to two-dimensional platinum ditelluride (2D PtTe2) van der Waals (vdW) layers. The low temperature (i.e., 400 °C) thermal tellurization of chemical vapor deposition (CVD)-grown PtS thin films leads to the formation of 2D PtTe2 vdW layers with a modulated crystallographic orientation, i.e., a mixture of horizontally and vertically oriented 2D layers. This chemical conversion enables the tunable electrical transport accompanying semiconducting-to-metallic transition as well as negative photoresponsiveness in the 2D PtTe2 layers. Density functional theory (DFT) calculations verify the thermodynamic principle for the conversion in the frame of free energy landscapes. The present work suggests a new chemical route for controlling the atomic and chemical structures of 2D transition metal dichalcogenides (TMDs) toward their wafer-scale modulation of electrical and opto-electrical properties.

materials science, multidisciplinary,chemistry, physical
Self-Aligned Edge Contact Process for Fabricating High-Performance Transition-Metal Dichalcogenide Field-Effect Transistors

Seokjin Ko,Dongryul Lee,Jeongmin Kim,Chang-Koo Kim,Jihyun Kim

DOI: https://doi.org/10.1021/acsnano.4c06159

IF: 17.1

2024-08-22

ACS Nano

Abstract:The persistent challenges encountered in metal-transition-metal dichalcogenide (TMD) junctions, including tunneling barriers and Fermi-level pinning, pose significant impediments to achieving optimal charge transport and reducing contact resistance. To address these challenges, a pioneering self-aligned edge contact (SAEC) process tailored for TMD-based field-effect transistors (FETs) is developed by integrating a WS2 semiconductor with a hexagonal boron nitride dielectric via reactive ion etching. This approach streamlines semiconductor fabrication by enabling edge contact formation without the need for additional lithography steps. Notably, SAEC TMD-based FETs exhibit exceptional device performance, featuring a high on/off current ratio of ∼108, field-effect mobility of up to 120 cm2/V·s, and controllable polarity─essential attributes for advanced TMD-based logic circuits. Furthermore, the SAEC process enables precise electrode positioning and effective minimization of parasitic capacitance, which are pivotal for attaining high-speed characteristics in TMD-based electronics. The compatibility of the SAEC technique with existing Si self-aligned processes underscores its feasibility for integration into post-CMOS applications, heralding an upcoming era of integration of TMDs into Si semiconductor electronics. The introduction of the SAEC process represents a significant advancement in TMD-based microelectronics and is poised to unlock the full potential of TMDs for future electronic technologies.

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