Abstract:Two-dimensional (2D) transition metal dichalcogenides (TMDs) allow for atomic-scale manipulation, challenging the conventional limitations of semiconductor materials. This capability may overcome the short-channel effect, sparking significant advancements in electronic devices that utilize 2D TMDs. Exploring the dimension and performance limits of transistors based on 2D TMDs has gained substantial importance. This review provides a comprehensive investigation into these limits of the single 2D-TMD transistor. It delves into the impacts of miniaturization, including the reduction of channel length, gate length, source/drain contact length, and dielectric thickness on transistor operation and performance. In addition, this review provides a detailed analysis of performance parameters such as source/drain contact resistance, subthreshold swing, hysteresis loop, carrier mobility, on/off ratio, and the development of p-type and single logic transistors. This review details the two logical expressions of the single 2D-TMD logic transistor, including current and voltage. It also emphasizes the role of 2D TMD-based transistors as memory devices, focusing on enhancing memory operation speed, endurance, data retention, and extinction ratio, as well as reducing energy consumption in memory devices functioning as artificial synapses. This review demonstrates the two calculating methods for dynamic energy consumption of 2D synaptic devices. This review not only summarizes the current state of the art in this field but also highlights potential future research directions and applications. It underscores the anticipated challenges, opportunities, and potential solutions in navigating the dimension and performance boundaries of 2D transistors.

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Recent Progress in Contact Engineering of Field-Effect Transistor Based on Two-Dimensional Materials

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Two-Dimensional Semiconductors for State-of-the-Art Complementary Field-Effect Transistors and Integrated Circuits

Reversible Transition of Semiconducting PtSe2 and Metallic PtTe2 for Scalable All-2D Edge-Contacted FETs

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Self-Aligned Edge Contact Process for Fabricating High-Performance Transition-Metal Dichalcogenide Field-Effect Transistors

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Process integration and future outlook of 2D transistors

Chalcogen Assisted Enhanced Atomic Orbital Interaction at TMDs - Metal Interface & Chalcogen Passivation of TMD Channel For Overall Performance Boost of 2D TMD FETs

Performance Limits and Advancements in Single 2D Transition Metal Dichalcogenide Transistor

Nanoforming of transferred metal contacts for enhanced two-dimensional field effect transistors

Graphene‐Enhanced Metal Transfer Printing for Strong van der Waals Contacts between 3D Metals and 2D Semiconductors

Potential of Transition Metal Dichalcogenide Transistors for Flexible Electronics Applications

Enhanced Carrier Transport by Transition Metal Doping in WS2 Field Effect Transistors

A perspective on the doping of transition metal dichalcogenides for ultra-scaled transistors: Challenges and opportunities

Toward the Growth of High Mobility 2D Transition Metal Dichalcogenide Semiconductors

Graphene-enhanced van der Waals contacts between three-dimensional metals and two-dimensional semiconductors

Latest advance on seamless metal-semiconductor contact with ultralow Schottky barrier in 2D-material-based devices