Abstract:Two-dimensional (2D) transition metal dichalcogenides (TMDs) allow for atomic-scale manipulation, challenging the conventional limitations of semiconductor materials. This capability may overcome the short-channel effect, sparking significant advancements in electronic devices that utilize 2D TMDs. Exploring the dimension and performance limits of transistors based on 2D TMDs has gained substantial importance. This review provides a comprehensive investigation into these limits of the single 2D-TMD transistor. It delves into the impacts of miniaturization, including the reduction of channel length, gate length, source/drain contact length, and dielectric thickness on transistor operation and performance. In addition, this review provides a detailed analysis of performance parameters such as source/drain contact resistance, subthreshold swing, hysteresis loop, carrier mobility, on/off ratio, and the development of p-type and single logic transistors. This review details the two logical expressions of the single 2D-TMD logic transistor, including current and voltage. It also emphasizes the role of 2D TMD-based transistors as memory devices, focusing on enhancing memory operation speed, endurance, data retention, and extinction ratio, as well as reducing energy consumption in memory devices functioning as artificial synapses. This review demonstrates the two calculating methods for dynamic energy consumption of 2D synaptic devices. This review not only summarizes the current state of the art in this field but also highlights potential future research directions and applications. It underscores the anticipated challenges, opportunities, and potential solutions in navigating the dimension and performance boundaries of 2D transistors.

Doping, Contact and Interface Engineering of Two-Dimensional Layered Transition Metal Dichalcogenides Transistors

Transistors and logic circuits enabled by 2D transition metal dichalcogenides: A state-of-the-art survey

Performance Limits and Advancements in Single 2D Transition Metal Dichalcogenide Transistor

A perspective on the doping of transition metal dichalcogenides for ultra-scaled transistors: Challenges and opportunities

Electrical Contacts to Two-Dimensional Transition-Metal Dichalcogenides

Controlled Synthesis and Accurate Doping of Wafer‐Scale Two‐Dimensional Semiconducting Transition Metal Dichalcogenides

Innovations of metallic contacts on semiconducting 2D transition metal dichalcogenides toward advanced 3D-structured field-effect transistors

Silicon-processes-compatible contact engineering for two-dimensional materials integrated circuits

Toward the Growth of High Mobility 2D Transition Metal Dichalcogenide Semiconductors

Progress of Large-Scale Synthesis and Electronic Device Application of Two-Dimensional Transition Metal Dichalcogenides.

Controllable Thin-Film Approaches for Doping and Alloying Transition Metal Dichalcogenides Monolayers

Crested two-dimensional transistors

Recent Progress in Contact Engineering of Field-Effect Transistor Based on Two-Dimensional Materials

Electron Transport and Device Physics in Monolayer Transition-Metal Dichalcogenides

Recent Progress in Devices and Circuits Based on Wafer-Scale Transition Metal Dichalcogenides.

Ultimate dielectric scaling of 2D transistors via van der Waals metal integration

A "click" Reaction to Engineer MoS2 Field-Effect Transistors with Low Contact Resistance.

Two-Dimensional Semiconductors for State-of-the-Art Complementary Field-Effect Transistors and Integrated Circuits

Logical Integration Device for Two-Dimensional Semiconductor Transition Metal Sulfide

Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors

Engineering Interfacial Charge Transfer through Modulation Doping for 2D Electronics