Engineering Interfacial Charge Transfer through Modulation Doping for 2D Electronics

Raagya Arora,Ariel R. Barr,Daniel T. Larson,Michele Pizzochero,Efthimios Kaxiras

2024-10-10

Abstract:Two-dimensional (2D) semiconductors are likely to dominate next-generation electronics due to their advantages in compactness and low power consumption. However, challenges such as high contact resistance and inefficient doping hinder their applicability. Here, we investigate workfunction-mediated charge transfer (modulation doping) as a pathway for achieving high-performance p-type 2D transistors. Focusing on type-III band alignment, we explore the doping capabilities of 27 candidate materials, including transition metal oxides, oxyhalides, and {\alpha}-RuCl3, on channel materials such as transition metal dichalcogenides (TMDs) and group-III nitrides. Our extensive first-principles density functional theory (DFT) reveal p-type doping capabilities of high electron affinity materials, including {\alpha}-RuCl3, MoO3, and V2O5. We predict significant reductions in contact resistance and enhanced channel mobility through efficient hole transfer without introducing detrimental defects. We analyze transistor geometries and identify promising material combinations beyond the current focus on WSe2 doping, suggesting new avenues for hBN, AlN, GaN, and MoS2. This comprehensive investigation provides a roadmap for developing high-performance p-type monolayer transistors toward the realization of 2D electronics.

Materials Science,Applied Physics

What problem does this paper attempt to address?

The main problem this paper attempts to address is improving the performance of two-dimensional (2D) semiconductor materials in next-generation electronic devices, particularly focusing on the two key challenges of high contact resistance and inefficient doping. Specifically:

1. **High Contact Resistance**: The high contact resistance between 2D materials and metal electrodes limits the operational performance of circuits, leading to slower speeds, unnecessary heat generation, reduced switching ratios, and increased power consumption. Effective doping techniques can reduce the depletion layer width in the contact area, thereby lowering contact resistance.

2. **Inefficient Doping**: Due to their atomic-level thickness, 2D materials are not suitable for traditional doping methods (such as ion implantation), which can reduce carrier mobility. Therefore, new doping techniques need to be developed to increase carrier concentration and mobility without introducing harmful defects.

To address these issues, the authors investigated methods to achieve high-performance p-type 2D transistors through work function-mediated charge transfer (modulation doping). They focused on the doping capabilities of 27 candidate materials (including transition metal oxides, oxyhalides, and α-RuCl₃) under type-III band alignment for channel materials such as transition metal dichalcogenides and group III nitrides. Using first-principles density functional theory (DFT) calculations, the authors predicted efficient p-type doping materials and proposed methods to significantly reduce contact resistance and enhance channel mobility.

Additionally, the authors analyzed the transistor geometry and identified some promising material combinations, providing a roadmap for developing high-performance p-type monolayer transistors. This not only aids in the application of 2D electronic devices but also provides important references for future research.