Abstract:Two-dimensional (2D) semiconductors, such as the transition metal dichalcogenides, have demonstrated tremendous promise for the development of highly tunable quantum devices. Realizing this potential requires low-resistance electrical contacts that perform well at low temperatures and low densities where quantum properties are relevant. Here we present a new device architecture for 2D semiconductors that utilizes a charge-transfer layer to achieve large hole doping in the contact region, and implement this technique to measure magneto-transport properties of high-purity monolayer WSe$_2$. We measure a record-high hole mobility of 80,000 cm$^2$/Vs and access channel carrier densities as low as $1.6\times10^{11}$ cm$^{-2}$, an order of magnitude lower than previously achievable. Our ability to realize transparent contact to high-mobility devices at low density enables transport measurement of correlation-driven quantum phases including observation of a low temperature metal-insulator transition in a density and temperature regime where Wigner crystal formation is expected, and observation of the fractional quantum Hall effect under large magnetic fields. The charge transfer contact scheme paves the way for discovery and manipulation of new quantum phenomena in 2D semiconductors and their heterostructures.

What problem does this paper attempt to address?

The key problem that this paper attempts to solve is how to achieve efficient, low - impedance electrical contacts to two - dimensional semiconductors (especially monolayer WSe₂) at low temperatures and low carrier densities. Specifically, the authors proposed a new device architecture, using a charge - transfer layer to achieve large - scale hole doping in the contact area, and through this method measured the magnetic transport properties of high - purity monolayer WSe₂. ### Main Problems and Solutions 1. **Achieving Efficient Electrical Contacts** - **Problem**: Traditional electrical contact methods are difficult to maintain transparency and low resistance at low temperatures and low carrier densities, which limits the study of quantum phenomena. - **Solution**: A new charge - transfer contact scheme was introduced, using α - RuCl₃ as a charge - transfer layer to induce large - scale hole doping in the contact area, thereby significantly reducing the contact resistance and improving the contact transparency. 2. **Studying Quantum Transport Properties at Low Densities** - **Problem**: In previous experiments, due to limitations in contact quality, effective transport measurements could not be carried out at extremely low carrier densities. - **Solution**: Through the optimized charge - transfer contact scheme, high - quality transport measurements of monolayer WSe₂ at low densities (as low as $1.6\times10^{11}\, \text{cm}^{-2}$) and low temperatures (as low as 300 mK) were achieved, revealing phenomena such as the metal - insulator transition (MIT) and the fractional quantum Hall effect (FQHE). ### Specific Achievements - **High Mobility**: A record - high hole mobility of 80,000 cm²/Vs was measured. - **Metal - Insulator Transition at Low Densities**: The metal - insulator transition in the low - density region ($1.6\times10^{11}\, \text{cm}^{-2}$) was observed, which may be related to the formation of Wigner crystals. - **Fractional Quantum Hall Effect**: For the first time, the transport characteristics of the fractional quantum Hall effect were observed in monolayer WSe₂, including multiple fractional filling factor states in the N = 0 and N = 1 Landau levels. Through these improvements, this research provides a new approach for exploring new quantum phenomena in two - dimensional semiconductors and lays the foundation for the future development of high - performance quantum devices based on these materials.

Charge-transfer Contact to a High-Mobility Monolayer Semiconductor

Charge-transfer contacts for the measurement of correlated states in high-mobility WSe 2

Electron and Hole Mobilities in Single-Layer WSe2

Quantum Transport in Two-Dimensional WS$_2$ with High-Efficiency Carrier Injection Through Indium Alloy Contacts

Low Resistance Ohmic Contact to P-type Monolayer WSe2

High-throughput screening of 2D materials identifies p -type monolayer WS 2 as potential ultra-high mobility semiconductor

Tunable Contact Resistance in Transition Metal Dichalcogenide Lateral Heterojunctions

Approaching the quantum limit in two-dimensional semiconductor contacts

Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors

Ultralow contact resistance between semimetal and monolayer semiconductors

Efficient Ohmic contacts and built-in atomic sublayer protection in MoSi2N4 and WSi2N4 monolayers

Charge Transfer Properties of Heterostructures Formed by Bi2O2Se and Transition Metal Dichalcogenide Monolayers

All‐van‐der‐Waals Barrier‐Free Contacts for High‐Mobility Transistors

Designing Efficient Metal Contacts to Two-Dimensional Semiconductors MoSi$_2$N$_4$ and WSi$_2$N$_4$ Monolayers

Universal low-temperature Ohmic contacts for quantum transport in transition metal dichalcogenides

Low Resistance Contact to P-Type Monolayer WSe2

Toward barrier free contact to MoSe2/WSe2 heterojunctions using two-dimensional metal electrodes

Tunable Schottky contacts in MSe 2 /NbSe 2 (M = Mo and W) heterostructures and promising application potential in field-effect transistors.

High-Fidelity Transfer of 2D Semiconductors and Electrodes for Van Der Waals Devices

Charge Transfer Properties of Heterostructures Formed by Bi 2 O 2 Se and Transition Metal Dichalcogenide Monolayers

Multi-terminal electrical transport measurements of molybdenum disulphide using van der Waals heterostructure device platform