Abstract:Advanced beyond-silicon electronic technology requires both channel materials and also ultralow-resistance contacts to be discovered<a href="/articles/s41586-021-03472-9#ref-CR1">1</a>,<a href="/articles/s41586-021-03472-9#ref-CR2">2</a>. Atomically thin two-dimensional semiconductors have great potential for realizing high-performance electronic devices<a href="/articles/s41586-021-03472-9#ref-CR1">1</a>,<a href="/articles/s41586-021-03472-9#ref-CR3">3</a>. However, owing to metal-induced gap states (MIGS)<a href="#ref-CR4">4</a>,<a href="#ref-CR5">5</a>,<a href="#ref-CR6">6</a>,<a href="/articles/s41586-021-03472-9#ref-CR7">7</a>, energy barriers at the metal–semiconductor interface—which fundamentally lead to high contact resistance and poor current-delivery capability—have constrained the improvement of two-dimensional semiconductor transistors so far<a href="/articles/s41586-021-03472-9#ref-CR2">2</a>,<a href="/articles/s41586-021-03472-9#ref-CR8">8</a>,<a href="/articles/s41586-021-03472-9#ref-CR9">9</a>. Here we report ohmic contact between semimetallic bismuth and semiconducting monolayer transition metal dichalcogenides (TMDs) where the MIGS are sufficiently suppressed and degenerate states in the TMD are spontaneously formed in contact with bismuth. Through this approach, we achieve zero Schottky barrier height, a contact resistance of 123 ohm micrometres and an on-state current density of 1,135 microamps per micrometre on monolayer MoS2; these two values are, to the best of our knowledge, the lowest and highest yet recorded, respectively. We also demonstrate that excellent ohmic contacts can be formed on various monolayer semiconductors, including MoS2, WS2 and WSe2. Our reported contact resistances are a substantial improvement for two-dimensional semiconductors, and approach the quantum limit. This technology unveils the potential of high-performance monolayer transistors that are on par with state-of-the-art three-dimensional semiconductors, enabling further device downscaling and extending Moore's law.

Universal low-temperature Ohmic contacts for quantum transport in transition metal dichalcogenides

Bridging the gap between atomically thin semiconductors and metal leads

Electrical Contacts to Two-Dimensional Transition-Metal Dichalcogenides

Lowering the Schottky Barrier Height by Quasi-van Der Waals Contacts for High-Performance P-Type MoTe2 Field-Effect Transistors

Quantum Transport in Two-Dimensional WS$_2$ with High-Efficiency Carrier Injection Through Indium Alloy Contacts

Charge-transfer Contact to a High-Mobility Monolayer Semiconductor

A new insight for ohmic contacts to MoS 2 : by tuning MoS 2 affinity energies but not metal work-functions.

Semimetal contacts to monolayer semiconductor: weak metalization as an effective mechanism to Schottky barrier lowering

Approaching the quantum limit in two-dimensional semiconductor contacts

Low Contact Resistance on Monolayer MoS2 Field-Effect Transistors Achieved by CMOS-Compatible Metal Contacts

Tunable Doping of Rhenium and Vanadium into Transition Metal Dichalcogenides for Two-Dimensional Electronics

Robust transport of charge carriers in in-plane 1T′-2H MoTe2 homojunctions with ohmic contact

Large-Scale Vertical 1T′/2H MoTe2 Nanosheet-Based Heterostructures for Low Contact Resistance Transistors

Ultralow contact resistance between semimetal and monolayer semiconductors

Non-Destructive Low-Temperature Contacts to MoS2 Nanoribbon and Nanotube Quantum Dots

Tunable Schottky contacts in MSe 2 /NbSe 2 (M = Mo and W) heterostructures and promising application potential in field-effect transistors.

Charge-transfer contacts for the measurement of correlated states in high-mobility WSe 2

High-Performance p-Type Quasi-Ohmic of WSe2 Transistors Using Vanadium-Doped WSe2 as Intermediate Layer Contact

Tunable Doping of Rhenium and Vanadium into Transition Metal Dichalcogenides for Two‐Dimensional Electronics

Atomistic Simulations of Device Physics in Monolayer Transition Metal Dichalcogenide Tunneling Transistors

Direct observation of contact resistivity for monolayer TMD based junctions via PL spectroscopy