Bridging the gap between atomically thin semiconductors and metal leads

Xiangbin Cai,Zefei Wu,Xu Han,Shuigang Xu,Jiangxiazi Lin,Tianyi Han,Pingge He,Xuemeng Feng,Liheng An,Run Shi,Jingwei Wang,Zhehan Ying,Yuan Cai,Mengyuan Hua,Junwei Liu,Ding Pan,Chun Cheng,Ning Wang

DOI: https://doi.org/10.1038/s41467-022-29449-4

2021-07-01

Abstract:Electrically interfacing atomically thin transition metal dichalcogenide semiconductors (TMDSCs) with metal leads is challenging because of undesired interface barriers, which have drastically constrained the electrical performance of TMDSC devices for exploring their unconventional physical properties and realizing potential electronic applications. Here we demonstrate a strategy to achieve nearly barrier-free electrical contacts with few-layer TMDSCs by engineering interfacial bonding distortion. The carrier-injection efficiency of such electrical junction is substantially increased with robust ohmic behaviors from room to cryogenic temperatures. The performance enhancements of TMDSC field-effect transistors are well reflected by the ultralow contact resistance (down to 90 Ohm um in MoS2, towards the quantum limit), the ultrahigh field-effect mobility (up to 358,000 cm2V-1s-1 in WSe2) and the prominent transport characteristics at cryogenic temperatures. This method also offers new possibilities of the local manipulation of structures and electronic properties for TMDSC device design.

Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is the challenge of establishing efficient electrical contacts between atomically - thin transition - metal dichalcogenide semiconductors (TMDSCs) and metal leads. Specifically, due to unwanted interface barriers (such as tunneling and Schottky barriers), these barriers significantly limit the electrical performance of TMDSC devices and impede the ability to explore their unconventional physical properties and realize potential electronic applications. These problems are particularly prominent under low - temperature conditions, because the quantum transport properties under low - temperature conditions are of great significance for the study of condensed - matter physics. To overcome this challenge, the authors propose a strategy to achieve nearly barrier - free electrical contacts through engineered interface - bonding distortion. This method not only improves carrier - injection efficiency but also exhibits stable Ohmic behavior at both room temperature and low temperatures. Experimental results show that TMDSC field - effect transistors (FETs) using this local - bonding - distortion (LBD) method demonstrate ultra - low contact resistance (for example, as low as 90 Ωµm in three - layer MoS₂, close to the quantum limit), ultra - high field - effect mobility (for example, as high as 358,000 cm²V⁻¹s⁻¹ in five - layer WSe₂), and remarkable transport properties at low temperatures. In addition, this method also provides new possibilities for local manipulation of structural and electronic properties in TMDSC device design.

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