Abstract:One of the most appealing aspects of the two-dimensional transition-metal dichalcogenides (2D-TMDs) is that they have a variety of crystal types, which can exist in three different atomic lattices, 2H, 1 T and 1 T', and can therefore exhibit diverse electronic properties. In addition, 2D-TMD heterostructures with distinctive features can be generated by combining two monolayers either vertically or laterally (in-plane). In this work, we used first-principles calculations to explore the structural and electronic properties of the H-phase MoTe2 monolayer, the T'-phase WTe2 monolayer, and their in-plane heterostructures (H-MoTe2/T'-WTe2). The H-phase MoTe2 monolayer has a band structure with a direct band gap, whereas the 1 T'-WTe2 monolayer is projected to be a Weyl semimetal based on our findings. We constructed a series of five relatively stable in-plane H-MoTe2/T'-WTe2 heterostructures with metal–semiconductor and studied their electronic properties. The band structures of these in-plane heterostructures were shown to be strongly related to the relative orientations of the monolayers at the interface. In particular, the band gaps of the heterostructures joined along the armchair direction were found to be smaller than 0.1 eV. By sewing the MoTe2 and WTe2 monolayers along the zigzag direction, two relatively stable structures were created, with according to the band structure analysis, exhibited metallic characteristics. Surprisingly, band inversion appeared near the Fermi level due to boundary effects. Therefore, topological properties may be present in such in-plane heterostructures. Moreover, some of these in-plane H-MoTe2/T'-WTe2 heterostructures have effective Schottky barrier heights smaller than 0.25 eV for holes, and could thus be used to construct field effect transistors (FETs). We also found that the effective Schottky barrier height was largely determined by the interfacial bonding environment, the external electric field, and uniaxial strains. Our findings enrich the diversity of the 2D-TMDs heterostructures and point to a viable approach for the design of high-performance electronic and optoelectronic devices.

Shallowing interfacial carrier trap in transition metal dichalcogenide heterostructures with interlayer hybridization

Bridging the gap between atomically thin semiconductors and metal leads

Alleviation of Schottky barrier heights at TMDs/metal interfaces with a tunneling layer of semiconducting InSe nanoflake

Tunable Contact Types and Interfacial Electronic Properties in TaS2/MoS2 and TaS2/WSe2 Heterostructures

Gate-tunable interfacial properties of in-plane ML MX2 1T0-2H heterojunctions

Passivated Interfacial Traps of Monolayer MoS2 with Bipolar Electrical Pulse

Interface Engineering for Efficient Photocarrier Generation and Transfer in Strongly Coupled Metallic/Semiconducting 1T'/2H MoS2 Heterobilayers.

Interfacial properties of In-plane monolayer 2H-MoTe2/1T'-WTe2 heterostructures

Doping, Contact and Interface Engineering of Two-Dimensional Layered Transition Metal Dichalcogenides Transistors

Interface and Interlayer Electron/Exciton-Phonon Coupling of TMDs/InSe for Efficient Charge Transfer and Ultrafast Dynamics: Implications for Field-Effect Devices

Theoretical Study of Interfacial and Electronic Properties of Transition Metal Dichalcogenides and Organic Molecules Based Van Der Waals Heterostructures

Bridging the Van Der Waals Interface for Advanced Optoelectronic Devices

Electron Transport and Device Physics in Monolayer Transition-Metal Dichalcogenides

Optical spectroscopic detection of Schottky barrier height at a two-dimensional transition-metal dichalcogenide/metal interface

Layer-dependent semiconductor-metal transition of SnO/Si(001) heterostructure and device application

Suppressing the vdW Gap‐Induced Tunneling Barrier by Constructing Interfacial Covalent Bonds in 2D Metal–Semiconductor Contacts

Hybrid single-layer/bulk tungsten diselenide transistors by lithographic encoding of material thickness in chemical vapor deposition

Mechanistic Understanding of the Interfacial Properties of Metal-PtSe2 Contacts

Charge Transfer Properties of Heterostructures Formed by Bi2O2Se and Transition Metal Dichalcogenide Monolayers

Towards Intrinsic Charge Transport in Monolayer Molybdenum Disulfide by Defect and Interface Engineering

Lowering the Schottky Barrier Height of G/WSSe Van Der Waals Heterostructures by Changing the Interlayer Coupling and Applying External Biaxial Strain