Abstract:A van der Waals heterostructure (vdWH) contact strategy for 2D field‐effect transistors (FETs) is proposed by introducing a vdW semiconductor intercalation between the metal electrode and the 2D channel. This strategy enabled the complementary doping within vdWHs, Ohmic contacts at electrical interfaces, and symmetric currents in p‐type and n‐type 2D‐FETs. Incorporating atomically thin 2D semiconductors (2DSCs) into the vertical complementary field‐effect transistors (CFETs) is of great significance in enabling devices to break through the sub‐nanometer scaling limit. However, due to the lack of effective doping technology and the difficult‐to‐control electrode interface, simultaneously realizing high‐performance p‐type and n‐type devices using a single metal electrode presents great challenges for 2D‐CFETs design. In this study, an innovative electrical contact strategy is proposed by constructing van der Waals heterojunction (vdWH) using 2DSCs to regulate the electrical contact properties between the metal electrode and 2DSC channel. First‐principles calculations reveal that degenerate or quasi‐degenerate complementary doping is achieved in a series of transition metal dichalcogenides (TMDs) by designing (quasi‐)broken‐gap vdWHs and utilizing their interlayer charge transfer. Metal‐2DSC contact barriers can be effectively regulated by introducing 2DSC intercalation and constructing vdWH. P‐type (quasi‐)Ohmic contacts are realized between Au electrode and various TMD channels, as well as between WTe2 channel and different metal electrodes. Moreover, quantum transport simulations present the remarkable on‐current over 102 μA μm−1 in both p‐type and n‐type 2D‐FETs by employing the vdWH and metal‐vdWH electrodes. The proposed vdWH strategy is applicable to various metal‐2DSC contacts and will shed light on future high‐performance 2D‐CFET integrations.

Suppressing the vdW Gap‐Induced Tunneling Barrier by Constructing Interfacial Covalent Bonds in 2D Metal–Semiconductor Contacts

Hydrogen-bonding enables two-dimensional metal/semiconductor tunable contacts approaching the quantum limit and the modified Schottky-Mott limit simultaneously

Bridging the gap between atomically thin semiconductors and metal leads

Efficient Ohmic contacts and built-in atomic sublayer protection in MoSi2N4 and WSi2N4 monolayers

Van der Waals Heterostructure Contact Strategy for Barrier‐Free 2D Complementary Transistors

Ohmic contacts in MXene/MoSi2N4 heterojunctions

Non-invasively Improving the Schottky Barrier of MoS2/metal Contacts by Inserting a SiC Layer

All‐van‐der‐Waals Barrier‐Free Contacts for High‐Mobility Transistors

Engineering Schottky-to-Ohmic contact transition for 2D metal–semiconductor junctions

Designing Efficient Metal Contacts to Two-Dimensional Semiconductors MoSi$_2$N$_4$ and WSi$_2$N$_4$ Monolayers

Wafer-scale and universal van der Waals metal semiconductor contact

Enhancing the Contact Performance of Two-Dimensional Metals/In 2 S 3 Junctions by the Self-Repair of Sulfur Vacancies in Air

Graphene‐Enhanced Metal Transfer Printing for Strong van der Waals Contacts between 3D Metals and 2D Semiconductors

Graphene-enhanced van der Waals contacts between three-dimensional metals and two-dimensional semiconductors

Hydrogen‐Bonding Integrated Low‐Dimensional Flexible Electronics beyond the Limitations of Van Der Waals Contacts

Resolving Interface Barrier Deviation from the Schottky-Mott Rule: A Mitigation Strategy Via Engineering MoS2-Metal Van Der Waals Contact

Enhancing the Contact Performance of Two-Dimensional Metals/In2S3 Junctions by the Self-Repair of Sulfur Vacancies in Air

Mechanistic Understanding of the Interfacial Properties of Metal-PtSe2 Contacts

Tuning the metal–semiconductor contact nature in MXene-based van der Waals heterostructures

P-type Schottky-barrier-free Contact to MoS_{2} Via Layer-Number-assisted Interface Engineering

Reliable wafer-scale integration of two-dimensional materials and metal electrodes with van der Waals contacts