Abstract:MXenes are 2D transition metal carbides with high potential for overcoming limitations of conventional two-dimensional electronics. In this context, various MXenes have shown magnetic properties suitable for applications in spintronics, yet the number of MXenes reported so far is far smaller than their parental MAX phases. Therefore, we have studied the structural, electronic and magnetic properties of bimetallic and vacancy-ordered MXenes derived from a new $(V_{2/3}Zr_{1/3})_2AlC $ MAX phase to assess whether MXene exfoliation would return stable magnetic materials. In particular, we have investigated the properties of pristine and surface-functionalized $(V_{2/3}Zr_{1/3})_2CX_2$ bimetallic and $(V_{2/3} \square_{1/3})_2CX2$ vacancy-ordered MXenes with X = O, F and OH. Our density functional theory (DFT) calculations showed that modifying the MXene stoichiometry and/or MXene surface functionalization changes MXene properties. After testing all possible combinations of metallic motifs and functionalization, we identified $V_{2/3}Zr_{1/3})_2CX_2$, $(V_{2/3}\square_{1/3})_2CF_2$ and $(V_{2/3}\square_{1/3})_2C(OH)_2$ as stable structures. Among them, $(V_{2/3}Zr_{1/3})_2CO_2$ MXene is predicted to be an FM intrinsic half-semiconductor with a remarkably high Curie temperature ($T_C$)) of 270 K. The $(V_{2/3}Zr_{1/3})_2C(OH)_2$ MXene exhibits a rather low work function (WF) (1.37 eV) and is thus a promising candidate for ultra-low work function electron emitters. Conversely, the $(V_{2/3}\square_{1/3})_2CF_2$ MXene has a rather high WF and hence can be used as a hole injector for Schottky-barrier-free contact applications. Overall, our proof-of-concept study shows that theoretical predictions of MXene exfoliation and properties support further experimental research towards developing spintronics devices.

Tuning the metal–semiconductor contact nature in MXene-based van der Waals heterostructures

Tunable Two-Dimensional Interfacial Coupling in Molecular Heterostructures

Ti2CO2/Ti2CF2 van der Waals heterostructure with robust Schottky barriers under electric fields

Two-dimensional MoS2/Ti2CX2 (X = S, Se, Te) heterostructures with tunable electrical contact type

Gate-tunable interfacial properties of in-plane ML MX2 1T0-2H heterojunctions

Ohmic contacts in MXene/MoSi2N4 heterojunctions

Tunable electronic properties and Schottky barrier in Janus Ti3C2FO and TMD heterostructures by interface atomic species and disorder

Manipulation of contact type in MoSSe/Ti3C2 heterostructures via the functionalization of chalcogens and halogens

Tunable Contact Types and Interfacial Electronic Properties in TaS2/MoS2 and TaS2/WSe2 Heterostructures

Schottky-Barrier-Free Contacts with Two-Dimensional Semiconductors by Surface-Engineered MXenes

Suppressing the vdW Gap‐Induced Tunneling Barrier by Constructing Interfacial Covalent Bonds in 2D Metal–Semiconductor Contacts

MoS2 Transistor with Weak Fermi Level Pinning via MXene Contacts

Achieving ultra-low contact barriers in MX2/SiH (M = Nb, Ta; X = S, Se) metal-semiconductor heterostructures: first-principles prediction

Asymmetric MXene/monolayer transition metal dichalcogenide heterostructures for functional applications

Interfacial charge transfer and interaction in the MXene/TiO2 heterostructures

First-principles investigations of the controllable electronic properties and contact types of type-II MoTe2/MoS2 van der Waals heterostructure

Control of spintronic and electronic properties of bimetallic and vacancy-ordered vanadium carbide MXenes via surface functionalization

Enhancing the Contact Performance of Two-Dimensional Metals/In 2 S 3 Junctions by the Self-Repair of Sulfur Vacancies in Air

A Universal In-Situ Interfacial Growth Strategy for Various MXene-Based van der Waals Heterostructures with Uniform Heterointerfaces: The Efficient Conversion from 3D Composite to 2D Heterostructures

Electronic, optical and transport properties of van der Waals Transition-metal Dichalcogenides Heterostructures: A First-principle Study

Tunable Electronic Properties and Contact Performance of Type‐II HfS2 /MoS2 Van der Waals Heterostructure