Abstract:One of the most appealing aspects of the two-dimensional transition-metal dichalcogenides (2D-TMDs) is that they have a variety of crystal types, which can exist in three different atomic lattices, 2H, 1 T and 1 T', and can therefore exhibit diverse electronic properties. In addition, 2D-TMD heterostructures with distinctive features can be generated by combining two monolayers either vertically or laterally (in-plane). In this work, we used first-principles calculations to explore the structural and electronic properties of the H-phase MoTe2 monolayer, the T'-phase WTe2 monolayer, and their in-plane heterostructures (H-MoTe2/T'-WTe2). The H-phase MoTe2 monolayer has a band structure with a direct band gap, whereas the 1 T'-WTe2 monolayer is projected to be a Weyl semimetal based on our findings. We constructed a series of five relatively stable in-plane H-MoTe2/T'-WTe2 heterostructures with metal–semiconductor and studied their electronic properties. The band structures of these in-plane heterostructures were shown to be strongly related to the relative orientations of the monolayers at the interface. In particular, the band gaps of the heterostructures joined along the armchair direction were found to be smaller than 0.1 eV. By sewing the MoTe2 and WTe2 monolayers along the zigzag direction, two relatively stable structures were created, with according to the band structure analysis, exhibited metallic characteristics. Surprisingly, band inversion appeared near the Fermi level due to boundary effects. Therefore, topological properties may be present in such in-plane heterostructures. Moreover, some of these in-plane H-MoTe2/T'-WTe2 heterostructures have effective Schottky barrier heights smaller than 0.25 eV for holes, and could thus be used to construct field effect transistors (FETs). We also found that the effective Schottky barrier height was largely determined by the interfacial bonding environment, the external electric field, and uniaxial strains. Our findings enrich the diversity of the 2D-TMDs heterostructures and point to a viable approach for the design of high-performance electronic and optoelectronic devices.

Gate-tunable interfacial properties of in-plane ML MX2 1T0-2H heterojunctions

Gate-tunable Interfacial Properties of In-Plane ML MX2 1T′–2H Heterojunctions

The Interfacial Properties of Monolayer MX–Metal Contacts

Interfacial properties of In-plane monolayer 2H-MoTe2/1T'-WTe2 heterostructures

First principles studies on the electronic and contact properties of single layer 2H-MoS 2 /1T′-MX 2 heterojunctions

Tunable Schottky contacts in MSe 2 /NbSe 2 (M = Mo and W) heterostructures and promising application potential in field-effect transistors.

In-plane Schottky-barrier Field-Effect Transistors Based on 1 T /2 H Heterojunctions of Transition-Metal Dichalcogenides

Tunable Contact Types and Interfacial Electronic Properties in TaS2/MoS2 and TaS2/WSe2 Heterostructures

Tuning the metal–semiconductor contact nature in MXene-based van der Waals heterostructures

Ohmic contacts in MXene/MoSi2N4 heterojunctions

Tunable Contact Resistance in Transition Metal Dichalcogenide Lateral Heterojunctions

1T Phase As an Efficient Hole Injection Layer to TMDs Transistors: a Universal Approach to Achieve P-Type Contacts

Planar Direction‐Dependent Interfacial Properties in Monolayer In2Se3–Metal Contacts

Gate-tunable Contact-Induced Fermi-level Shift in Semimetal

Alleviation of Schottky barrier heights at TMDs/metal interfaces with a tunneling layer of semiconducting InSe nanoflake

Gate-Tunable Semiconductor Heterojunctions from 2D/3D van der Waals Interfaces

Interfacial Properties of Monolayer MoSe2–Metal Contacts

Electrical Contacts in Monolayer MoSi2N4 Transistors

Correction: Gate-tunable interfacial properties of in-plane ML MX<sub>2</sub> 1T′–2H heterojunctions

Ohmic Contacts Between Monolayer WSe2 and Two-Dimensional Titanium Carbides

Low Contact Resistance on Monolayer MoS2 Field-Effect Transistors Achieved by CMOS-Compatible Metal Contacts