Abstract:Two-dimensional (2D) transition metal dichalcogenides (TMDs) allow for atomic-scale manipulation, challenging the conventional limitations of semiconductor materials. This capability may overcome the short-channel effect, sparking significant advancements in electronic devices that utilize 2D TMDs. Exploring the dimension and performance limits of transistors based on 2D TMDs has gained substantial importance. This review provides a comprehensive investigation into these limits of the single 2D-TMD transistor. It delves into the impacts of miniaturization, including the reduction of channel length, gate length, source/drain contact length, and dielectric thickness on transistor operation and performance. In addition, this review provides a detailed analysis of performance parameters such as source/drain contact resistance, subthreshold swing, hysteresis loop, carrier mobility, on/off ratio, and the development of p-type and single logic transistors. This review details the two logical expressions of the single 2D-TMD logic transistor, including current and voltage. It also emphasizes the role of 2D TMD-based transistors as memory devices, focusing on enhancing memory operation speed, endurance, data retention, and extinction ratio, as well as reducing energy consumption in memory devices functioning as artificial synapses. This review demonstrates the two calculating methods for dynamic energy consumption of 2D synaptic devices. This review not only summarizes the current state of the art in this field but also highlights potential future research directions and applications. It underscores the anticipated challenges, opportunities, and potential solutions in navigating the dimension and performance boundaries of 2D transistors.

In-plane Schottky-barrier Field-Effect Transistors Based on 1 T /2 H Heterojunctions of Transition-Metal Dichalcogenides

In-plane Schottky-barrier field-effect transistors with a 4-nm channel based on 1T/2H MoTe<sub>2</sub> and WTe<sub>2</sub>

Tunnel Field-Effect Transistors in 2D Transition Metal Dichalcogenide Materials

Device performance limit of in-plane monolayer VTe2/WTe2 heterojunction-based field-effect transistors

Publisher's Note: In-plane Schottky-barrier Field-Effect Transistors Based on 1T/2H Heterojunctions of Transition-Metal Dichalcogenides [phys. Rev. B 96 , 165402 (2017)]

Alleviation of Schottky barrier heights at TMDs/metal interfaces with a tunneling layer of semiconducting InSe nanoflake

Performance Limits and Advancements in Single 2D Transition Metal Dichalcogenide Transistor

Two-Dimensional MX2 Semiconductors for Sub-5 nm Junctionless Field Effect Transistors

Schottky barrier heights in two-dimensional field-effect transistors: from theory to experiment

Two-Dimensional Silicon Atomic Layer Field-Effect Transistors: Electronic Property, Metal-Semiconductor Contact, and Device Performance

Gate-tunable interfacial properties of in-plane ML MX2 1T0-2H heterojunctions

DFT Coupled with NEGF Study of N-Type MOSFET Based on 2D Planar B2S3 Semiconductor

Performance limits of tunnel transistors based on mono-layer transition-metal dichalcogenides

Two-Dimensional ZrS 2 and HfS 2 for Making Sub-10 nm High-Performance P-Type Transistors

Doping, Contact and Interface Engineering of Two-Dimensional Layered Transition Metal Dichalcogenides Transistors

High-Performance Wafer-Scale MoS2 Transistors Toward Practical Application

Assessing the role of quantum effects in 2D heterophase MoTe$_2$ field effect transistors

A Symmetric Tunnel Field-Effect Transistor Based on MoS2/Black Phosphorus/MoS2 Nanolayered Heterostructures

A new opportunity for two-dimensional van der Waals heterostructures: making steep-slope transistors

Device simulation study of multilayer MoS 2 Schottky barrier field-effect transistors

Monolayer Molybdenum Disulfide Transistors with Single-Atom-Thick Gates.