Abstract:Novel steep‐slope 2D tunnel field‐effect transistors are realized through the van der Waals integration of ferroelectric CuInP2S6 with WSe2/MoS2 heterojunction as well as WSe2 homojunction. These devices break through the fundamental thermionic limit, demonstrating a remarkably minimal subthreshold slope of 14.2 mV dec−1 and an impressive on/off ratio of 108, thus presenting strong potential for future low‐power applications. sPower consumption has emerged as a central concern in the realm of complementary metal‐oxide‐semiconductor (CMOS) technology. Silicon‐based semiconductor devices have now approached the fundamental thermionic limit of the subthreshold swing (SS), which is 60 mV dec−1, as defined by the Boltzmann tyranny. Tunnel field‐effect transistors (TFETs) are considered promising low‐power devices due to the band‐to‐band tunneling mechanism, which effectively avoids the thermionic limit. However, TFETs require the establishment of a staggered band alignment and currently lack effective techniques for adjusting the band offset. Here, by harnessing the robust ferroelectric field inherent to 2D CuInP2S6 (CIPS), a 2D WSe2/MoS2 heterojunction as well as a WSe2 homojunction TFET controlled by ferroelectric gate are presented. The newly developed TFET achieves an ultra‐low SS of 14.2 mV dec−1 at room temperature, an on/off current ratio exceeding 108, and a minimal hysteresis window below 10 mV. Additionally, the device demonstrates gate tunable negative differential resistance (NDR) characteristics with a very large peak‐to‐valley current ratio (PVCR) of 10.56 at room temperature. These findings underscore the significant promise of 2D ferroelectric tuning heterojunction and homojunction for future low‐power electronic applications.

Performance limits of tunnel transistors based on mono-layer transition-metal dichalcogenides

In-plane Schottky-barrier Field-Effect Transistors Based on 1 T /2 H Heterojunctions of Transition-Metal Dichalcogenides

Tunnel Field-Effect Transistors in 2D Transition Metal Dichalcogenide Materials

Device performance limit of in-plane monolayer VTe2/WTe2 heterojunction-based field-effect transistors

Performance Limit of Monolayer WSe2 Transistors; Significantly Outperform Their MoS2 Counterpart

Performance Limit of Monolayer WSe₂ Transistors; Significantly Outperform Their MoS₂ Counterpart

Tunable Snse2/Wse2 Heterostructure Tunneling Field Effect Transistor

Performance limits exploration of sub-5 nm monolayer germanane transistors: A first-principle quantum transport simulation

2D-2D tunneling field-effect transistors using WSe2/SnSe2 heterostructures

Atomistic Simulations of Device Physics in Monolayer Transition Metal Dichalcogenide Tunneling Transistors

2D Steep‐Slope Tunnel Field‐Effect Transistors Tuned by van der Waals Ferroelectrics

Performance Limit of All-Wrapped Monolayer MoS2 Transistors.

Two-Dimensional ZrS2 and HfS2 for Making Sub-10 nm High-Performance P-Type Transistors

Ultimate Limit in Optoelectronic Performances of Monolayer WSe 2 Sloping-Channel Transistors

Two-Dimensional MX 2 Semiconductors for Sub-5 Nm Junctionless Field Effect Transistors

Intrinsic subthermionic capabilities and high performance of easy-to-fabricate monolayer metal dihalide MOSFETs

High Performance Tunnel Field Effect Transistor with a Tri-Material-gate Structure

Tapping the Performance of a Tungsten Disulfide Field-Effect Transistor with Deep Structure Optimization and Theoretical Simulation

Two-Dimensional MX2 Semiconductors for Sub-5 nm Junctionless Field Effect Transistors

Two-dimensional transition metal dichalcogenides van der Waals heterojunctions with broken-gap for tunnel field-effect transistors applications

Monolayer Molybdenum Disulfide Transistors with Single-Atom-Thick Gates.