Abstract:Monolayer WSe2 is a two dimensional (2D) semiconductor with a direct bandgap, and it has been recently explored as a promising material for electronics and optoelectronics. Low field effect mobility is the main constraint preventing WSe2 from becoming one of the competing channel materials for field-effect transistors (FETs). Recent results have demonstrated that chemical treatments can modify the electrical properties of transition metal dichalcogenides (TMDCs) including MoS2 and WSe2. Here, we report that controlled heating in air significantly improves device performance of WSe2 FETs in terms of on-state currents and field-effect mobilities. Specifically, after heating at optimized conditions, chemical vapor deposition grown monolayer WSe2 FETs showed an average FET mobility of 31 cm2/Vs and on/off current ratios up to 5*108. For few-layer WSe2 FETs, after the same treatment applied, we achieved a high mobility up to 92 cm2/Vs. These values are significantly higher than FETs fabricated using as-grown WSe2 flakes without heating treatment, demonstrating the effectiveness of air heating on the performance improvements of WSe2 FETs. The underlying chemical processes involved during air heating and the formation of in-plane heterojunctions of WSe2 and WO3-x, which is believed to be the reason for the improved FET performance, were studied by spectroscopy and transmission electron microscopy. We further demonstrated that by combining air heating method developed in this work with supporting 2D materials on BN substrate, we achieved a noteworthy field effect mobility of 83 cm2/Vs for monolayer WSe2 FETs. This work is a step towards controlled modification of the properties of WSe2 and potentially other TMDCs, and may greatly improve device performance for future applications of 2D materials in electronics and optoelectronics.

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Unipolar P-Type Monolayer WSe2 Field-Effect Transistors with High Current Density and Low Contact Resistance Enabled by Van Der Waals Contacts

Low Resistance Ohmic Contact to P-type Monolayer WSe2

High-Performance Contact-Doped WSe2 Transistors Using TaSe2 Electrodes.

Controlling phase transition in WSe2 towards ideal n-type transistor

Hole mobility enhancement in monolayer WSe2 p-type transistors through molecular doping

Quasi-Zero-Dimensional Source/Drain Contact for Fermi-Level Unpinning in a Tungsten Diselenide (WSe2) Transistor: Approaching Schottky-Mott Limit

High-performance multilayer WSe2 p-type field effect transistors with Pd contacts for circuit applications

Low Contact Resistance WSe 2 p -Type Transistors with Highly Stable, CMOS-Compatible Dopants

Low Resistance Contact to P-Type Monolayer WSe2

Atomically Controlled Tunable Doping in High Performance WSe2 Devices

Optimized Electrical Properties of P-Type Field-Effect Transistors Based on WSe2 Grown at Moderate Temperatures

Tunable Snse2/Wse2 Heterostructure Tunneling Field Effect Transistor

Improvements in 2D p-type WSe2 transistors towards ultimate CMOS scaling

Low-Power Transistors with Ideal p-type Ohmic Contacts Based on VS 2 /WSe 2 van der Waals Heterostructures

Ohmic Contacts Between Monolayer WSe2 and Two-Dimensional Titanium Carbides

Quasi-Zero-Dimensional Source/Drain Contact for Fermi-Level Unpinning in a Tungsten Diselenide (WSe 2 ) Transistor: Approaching Schottky-Mott Limit

High Performance WSe2 Field-Effect Transistors via Controlled Formation of In-Plane Heterojunctions

High-Fidelity Transfer of 2D Semiconductors and Electrodes for Van Der Waals Devices

WSe2/Pd Schottky Diode Combining Van Der Waals Integrated and Evaporated Metal Contacts

Ohmic MXene Contacts for Symmetric P- and N-Type Monolayer WSe2 Schottky Barrier Field-Effect Transistors