Abstract:Advanced microelectronics in the future may require semiconducting channel materials beyond silicon. Two-dimensional (2D) semiconductors, characterized by their atomically thin thickness, hold immense promise for high-performance electronic devices at the nanometer scale with lower heat dissipation. One challenge for achieving high-performance 2D semiconductor field effect transistors (FET), especially for p-type materials, is the high electrical contact resistance present at the metal-semiconductor interface. In conventional bulk semiconductors, low resistance ohmic contact is realized through heavy substitutional doping with acceptor or donor impurities at the contact region. The strategy of substitutional doping, however, does not work for p-type 2D semiconductors such as monolayer tungsten diselenide (WSe$_2$).In this study, we developed highly efficient charge-transfer doping with WSe$_2$/$\alpha$-RuCl$_3$ heterostructures to achieve low-resistance ohmic contact for p-type WSe$_2$ transistors. We show that a hole doping as high as 3$\times$10$^{13}$ cm$^{-2}$ can be achieved in the WSe$_2/\alpha$-RuCl$_3$ heterostructure due to its type-III band alignment. It results in an Ohmic contact with resistance lower than 4 k Ohm $\mu$m at the p-type monolayer WSe$_2$/metal junction. at room temperature. Using this low-resistance contact, we demonstrate high-performance p-type WSe$_2$ transistors with a saturation current of 35 $\mu$A$\cdot$ $\mu$m$^{-1}$ and an I$_{ON}$/I$_{OFF}$ ratio exceeding 10$^9$ It could enable future microelectronic devices based on 2D semiconductors and contribute to the extension of Moore's law.

Quasi-Zero-Dimensional Source/Drain Contact for Fermi-Level Unpinning in a Tungsten Diselenide (WSe 2 ) Transistor: Approaching Schottky-Mott Limit

Quasi-Zero-Dimensional Source/Drain Contact for Fermi-Level Unpinning in a Tungsten Diselenide (WSe2) Transistor: Approaching Schottky-Mott Limit

High-Performance p-Type Quasi-Ohmic of WSe2 Transistors Using Vanadium-Doped WSe2 as Intermediate Layer Contact

Degenerate electron-doping in two-dimensional tungsten diselenide with a dimeric organometallic reductant

Fermi-Level Pinning-Free WSe2 Transistors via 2D Van der Waals Metal Contacts and Their Circuits

Fermi-level depinning of 2D transition metal dichalcogenide transistors

Atomically Controlled Tunable Doping in High Performance WSe2 Devices

High-Performance Contact-Doped WSe2 Transistors Using TaSe2 Electrodes.

Unipolar P-Type Monolayer WSe2 Field-Effect Transistors with High Current Density and Low Contact Resistance Enabled by Van Der Waals Contacts

Low Resistance Ohmic Contact to P-type Monolayer WSe2

Improvements in 2D p-type WSe2 transistors towards ultimate CMOS scaling

Engineering Schottky-to-Ohmic contact transition for 2D metal–semiconductor junctions

Chalcogen assisted contact engineering: towards CMOS integration of Tungsten Diselenide Field Effect Transistors

In-plane Schottky-barrier Field-Effect Transistors Based on 1 T /2 H Heterojunctions of Transition-Metal Dichalcogenides

Fermi‐Level Pinning Free High‐Performance 2D CMOS Inverter Fabricated with Van Der Waals Bottom Contacts

Investigation on Contact Properties of 2D van der Waals Semimetallic 1T-TiS 2 /MoS 2 Heterojunctions

Revealing the Weak Fermi Level Pinning Effect of 2D Semiconductor/2d Metal Contact: A Case of Monolayer In2Ge2Te6 and Its Janus Structure In2Ge2Te3Se3

P-type electrical contacts for two-dimensional transition metal dichalcogenides

Accurate Extraction of Schottky Barrier Height and Universality of Fermi Level De‐Pinning of van der Waals Contacts

Controlling phase transition in WSe2 towards ideal n-type transistor

Electrical Contacts to Two-Dimensional Transition-Metal Dichalcogenides