Abstract:Two-dimensional (2D) transition metal dichalcogenides (TMDCs) known for their exceptional electrical and optical properties have emerged as promising channel materials for next-generation electronics. However, as strong Fermi-level pinning (FLP) between the metal and the 2D TMDC material at the source/drain (S/D) contact decides the Schottky barrier height (SBH), the transistor polarity is fixed to a certain type, which remains a challenge for the 2D TMDC field-effect transistors (FETs). Here, a S/D contact structure with a quasi-zero-dimensional (quasi-0D) contact interface, in which the dimensionality reduction effect alleviates FLP, was developed to gain controllability over the polarity of the 2D TMDC FET. As a result, conventional metal contacts on the WSe2 FET showed n-type characteristics due to strong FLP (pinning factor of 0.06) near the conduction band, and the proposed quasi-0D contact enabled by the Ag conductive filament on the WSe2 FET exhibited p-type characteristics with a SBH very close to the Schottky-Mott rule (pinning factor of 0.95). Furthermore, modeling of Schottky barriers of conventional contacts, one-dimensional (1D) contacts, and quasi-0D contacts revealed that the SBH of the quasi-0D contact is relatively less subject to interface dipoles that induce FLP, owing to more rapid decaying of dipole energy. The proposed contact in this study provided a method that progressed beyond the alleviation of FLP to achieve controllable polarity. Moreover, reducing the contact dimensionality to quasi-0D will enable high compatibility with the further scaled-down nanoscale device contact structure.

Chalcogen assisted contact engineering: towards CMOS integration of Tungsten Diselenide Field Effect Transistors

Chalcogen Assisted Enhanced Atomic Orbital Interaction at TMDs - Metal Interface & Chalcogen Passivation of TMD Channel For Overall Performance Boost of 2D TMD FETs

H2S assisted contact engineering: a universal approach to enhance hole conduction in all TMD Field-Effect Transistors and achieve ambipolar CVD MoS2 Transistors

Atomically Controlled Tunable Doping in High Performance WSe2 Devices

Degenerate electron-doping in two-dimensional tungsten diselenide with a dimeric organometallic reductant

Bottom-up Integration of TMDCs with Pre-Patterned Device Architectures via Transfer-free Chemical Vapor Deposition

Self-Aligned Edge Contact Process for Fabricating High-Performance Transition-Metal Dichalcogenide Field-Effect Transistors

Toward High-Performance p-Type Two-Dimensional Field Effect Transistors: Contact Engineering, Scaling, and Doping

Controlling phase transition in WSe2 towards ideal n-type transistor

Innovations of metallic contacts on semiconducting 2D transition metal dichalcogenides toward advanced 3D-structured field-effect transistors

Unipolar P-Type Monolayer WSe2 Field-Effect Transistors with High Current Density and Low Contact Resistance Enabled by Van Der Waals Contacts

Improvements in 2D p-type WSe2 transistors towards ultimate CMOS scaling

P-type electrical contacts for two-dimensional transition metal dichalcogenides

Reversible Transition of Semiconducting PtSe2 and Metallic PtTe2 for Scalable All-2D Edge-Contacted FETs

High-Performance Contact-Doped WSe2 Transistors Using TaSe2 Electrodes.

Tunable Doping of Rhenium and Vanadium into Transition Metal Dichalcogenides for Two-Dimensional Electronics

Selective Electron Beam Patterning of Oxygen-Doped WSe2 for Seamless Lateral Junction Transistors

Quasi-Zero-Dimensional Source/Drain Contact for Fermi-Level Unpinning in a Tungsten Diselenide (WSe2) Transistor: Approaching Schottky-Mott Limit

High-Fidelity Transfer of 2D Semiconductors and Electrodes for Van Der Waals Devices

Multi-Layer Palladium Diselenide as a Contact Material for Two-Dimensional Tungsten Diselenide Field-Effect Transistors

Tunable Doping of Rhenium and Vanadium into Transition Metal Dichalcogenides for Two‐Dimensional Electronics