Abstract:Due to the pristine interface of the 2D/3D face-tunneling heterostructure with an ultra-sharp doping profile, the 2D/3D tunneling field-effect transistor (TFET) is considered as one of the most promising low-power devices that can simultane-ously obtain low off-state current (IOFF), high on-state current (ION) and steep subthreshold swing (SS). As a key element for the 2D/3D TFET, the intensive exploration of the tunnel diode based on the 2D/3D heterostructure is in urgent need. The transfer technique composed of the exfoliation and the release process is currently the most common approach to fabri-cating the 2D/3D heterostructures. However, the well-established transfer technique of the 2D materials is still unavailable. Only a small part of the irregular films can usually be obtained by mechanical exfoliation, while the choice of the chemical exfoliation may lead to the contamination of the 2D material films by the ions in the chemical etchants. Moreover, the defor-mation of the 2D material in the transfer process due to its soft nature also leads to the nonuniformity of the transferred film, which is one of the main reasons for the presence of the wrinkles and the stacks in the transferred film. Thus, the large-scale fabrication of the high-quality 2D/3D tunnel diodes is limited. In this article, a comprehensive transfer technique that can mend up the shortages mentioned above with the aid of the water and the thermal release tape (TRT) is proposed. Based on the method we proposed, the MoS2/Si tunnel diode is experimentally demonstrated and the transferred monolayer MoS2 film with the relatively high crystal quality is confirmed by atomic force microscopy (AFM), scanning electron microscopy (SEM), and Raman characterizations. Besides, the prominent negative differential resistance (NDR) effect is observed at room temperature, which verifies the relatively high quality of the MoS2/Si heterojunction. The bilayer MoS2/Si tunnel diode is also experimentally fabricated by repeating the transfer process we proposed, followed by the specific analysis of the electrical characteristics. This study shows the advantages of the transfer technique we proposed and indicates the great application foreground of the fabricated 2D/3D heterostructure for ultralow-power tunneling devices.

H2S assisted contact engineering: a universal approach to enhance hole conduction in all TMD Field-Effect Transistors and achieve ambipolar CVD MoS2 Transistors

1T Phase As an Efficient Hole Injection Layer to TMDs Transistors: a Universal Approach to Achieve P-Type Contacts

A Novel Contact Engineering Method for Transistors Based on Two-Dimensional Materials

Chalcogen assisted contact engineering: towards CMOS integration of Tungsten Diselenide Field Effect Transistors

Chalcogen Assisted Enhanced Atomic Orbital Interaction at TMDs - Metal Interface & Chalcogen Passivation of TMD Channel For Overall Performance Boost of 2D TMD FETs

Approaching Ohmic Contacts for Ideal Monolayer MoS2 Transistors Through Sulfur-Vacancy Engineering

MoS2/Si Tunnel Diodes Based on Comprehensive Transfer Technique

A "click" Reaction to Engineer MoS2 Field-Effect Transistors with Low Contact Resistance.

Yttrium-induced phase-transition technology for forming perfect ohmic contact in two-dimensional MoS2 transistors

P-type electrical contacts for two-dimensional transition metal dichalcogenides

Low Contact Resistance on Monolayer MoS2 Field-Effect Transistors Achieved by CMOS-Compatible Metal Contacts

Contact Optimisation Strategy for Wafer-Scale Field-Effect Transistors Based on Two-Dimensional Semiconductors

Multi-Layer Palladium Diselenide as a Contact Material for Two-Dimensional Tungsten Diselenide Field-Effect Transistors

Self-Aligned Edge Contact Process for Fabricating High-Performance Transition-Metal Dichalcogenide Field-Effect Transistors

Contact Engineering for Two-Dimensional Semiconductors

High-Performance Wafer-Scale MoS2 Transistors Toward Practical Application

Enhanced Carrier Transport by Transition Metal Doping in WS2 Field Effect Transistors

Unipolar P-Type Monolayer WSe2 Field-Effect Transistors with High Current Density and Low Contact Resistance Enabled by Van Der Waals Contacts

Enhancing the Contact Performance of Two-Dimensional Metals/In 2 S 3 Junctions by the Self-Repair of Sulfur Vacancies in Air

Contact Resistance Optimization in MoS${_2}$ Field-Effect Transistors through Reverse Sputtering-Induced Structural Modifications

Toward High-Performance p-Type Two-Dimensional Field Effect Transistors: Contact Engineering, Scaling, and Doping